2N3906 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor (PNP) TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18. • This transistor is also available in the SOT-23 case with the type designation MMBT3906. Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Bottom View Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Emitter Voltage –VCEO 40 V Collector-Base Voltage –VCBO 40 V Emitter-Base Voltage –VEBO 5.0 V –IC 200 mA Ptot 625 1.5 mW W RΘJA 250(1) °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Collector Current Power Dissipation TA = 25°C TC = 25°C Thermal Resistance Junction to Ambient Air Note: (1) Valid provided that leads are kept at ambient temperature. Document Number 88114 07-May-02 www.vishay.com 1 2N3906 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit hFE -VCE = 1 V, -IC = 0.1 mA -VCE = 1 V, -IC = 1 mA -VCE = 1 V, -IC = 10 mA -VCE = 1 V, -IC = 50 mA -VCE = 1 V, -IC = 100 mA 60 80 100 60 30 — — — — — — — 300 — — — Collector-Emitter Cutoff Current -ICEV -VEB = 3 V, -VCE = 30 V — — 50 nA Emitter-Base Cutoff Current -IEBV -VEB = 3 V, -VCE = 30 V — — 50 nA Collector Saturation Voltage -VCEsat -IC = 10 mA, -IB = 1 mA -IC = 50 mA, -IB = 5 mA — — — — 0.25 0.4 V Base Saturation Voltage -VBEsat -IC = 10 mA, -IB = 1 mA -IC = 50 mA, -IB = 5 mA — — — — 0.85 0.95 V Collector-Emitter Breakdown Voltage -V(BR)CEO -IC = 1 mA, IB = 0 40 — — V Collector-Base Breakdown Voltage -V(BR)CBO -IC = 10 µA, IE = 0 40 — — V Emitter-Base Breakdown Voltage -V(BR)EBO -IE = 10 µA, IC = 0 5 — — V Input Impedance hie -VCE = 10 V, -IC = 1 mA, f = 1 kHz 1 — 10 kΩ Voltage Feedback Ratio hre -VCE = 10 V, -IC = 1 mA, f = 1 kHz 0.5 • 10-4 — 8 • 10-4 — Current Gain-Bandwidth Product fT -VCE = 20 V, -IC = 10 mA f = 100 MHz 250 — — MHz Collector-Base Capacitance CCBO -VCB = 5 V, f = 100 kHz — — 4.5 pF Emitter-Base Capacitance CEBO -VEB = 0.5 V, f = 100 kHz — — 10 pF Small Signal Current Gain hfe -VCE = 10 V, -IC = 1 mA f = 1 kHz 100 — 400 — Output Admittance hoe -VCE = 1 V, -IC = 1 mA f = 1 kHz 1 — 40 µS J DC Current Gain www.vishay.com 2 Document Number 88114 07-May-02 2N3906 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Noise Figure F -VCE = 5 V, -IC = 100 µA, RG = 1 kΩ, f = 10...15000 Hz — — 4 dB Delay Time (see fig. 1) td -IB1 = 1 mA, -IC = 10 mA — — 35 ns Rise Time (see fig. 1) tr -IB1 = 1 mA, -IC = 10 mA, — — 35 ns Storage Time (see fig. 2) ts IB1 = -IB2 = 1 mA, -IC = 10 mA — — 225 ns Fall Time (see fig. 2) tf IB1 = -IB2 = 1 mA, -IC = 10 mA — — 75 ns Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors Document Number 88114 07-May-02 Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors www.vishay.com 3