2N3904 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor (NPN) TO-226AA (TO-92) 0.142 (3.6) Features min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N3906 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18. • This transistor is also available in the SOT-23 case with the type designation MMBT3904. Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Emitter Voltage VCEO 40 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 6.0 V IC 200 mA Ptot 625 1.5 mW W RΘJA 250(1) °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Collector Current Power Dissipation TA = 25°C TC = 25°C Thermal Resistance Junction to Ambient Air Note: (1) Valid provided that leads are kept at ambient temperature. Document Number 88113 07-May-02 www.vishay.com 1 2N3904 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit V(BR)CBO IC = 10 µA, IE = 0 60 — — V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 40 — — V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 µA, IC = 0 6 — — V Collector Saturation Voltage VCEsat IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA — — — — 0.2 0.3 V Base Saturation Voltage VBEsat IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA — — — — 0.85 0.95 V Collector-Emitter Cutoff Current ICEV VEB = 3 V, VCE = 30 V — — 50 nA Emitter-Base Cutoff Current IEBV VEB = 3 V, VCE = 30 V — — 50 nA DC Current Gain hFE VCE = 1 V, IC = 0.1 mA VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 50 mA VCE = 1 V, IC = 100 mA 40 70 100 60 30 — — 300 — — — — — — — — Input Impedance hie VCE = 10 V, IC = 1 mA f = 1 kHz 1 — 10 kΩ Voltage Feedback Ratio hre VCE = 10 V, IC = 1 mA f = 1 kHz 0.5 • 10-4 — 8 • 10-4 — Gain-Bandwidth Product fT VCE = 20 V, IC = 10 mA f = 100 MHz 300 — — MHz Collector-Base Capacitance CCBO VCB = 5 V, f = 100 kHz — — 4 pF Emitter-Base Capacitance CEBO VCB = 0.5 V, f = 100 kHz — — 8 pF Small Signal Current Gain hfe VCE = 10 V, I C = 1 mA, f = 1 kHz 100 — 400 — Output Admittance hoe VCE = 1 V, I C = 1 mA, f = 1 kHz 1 — 40 µS Noise Figure NF VCE = 5 V, I C = 100 µA, RG = 1 kΩ, f = 10...15000 kHz — — 5 dB Delay Time (see fig. 1) td IB1 = 1 mA, IC = 10 mA — — 35 ns Rise Time (see fig. 1) tr IB1 = 1 mA, IC = 10 mA — — 35 ns Storage Time (see fig. 2) ts — — 200 ns Fall Time (see fig. 2) tf — — 50 ns J Collector-Base Breakdown Voltage (1) Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors www.vishay.com 2 –IB1 = IB2 = 1 mA IC = 10 mA –IB1 = IB2 = 1 mA IC = 10 mA Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors Document Number 88113 07-May-02