FAIRCHILD KST2907AMTF

KST2907A
KST2907A
General Purpose Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
-60
Units
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-600
mA
PC
Collector Power Dissipation
350
mW
TSTG
Storage Temperature
150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -10µA, IE=0
Min.
-60
BVCEO
BVEBO
* Collector-Emitter Breakdown Voltage
IC= -10mA, IB=0
-60
Emitter-Base Breakdown Voltage
IE= -10µA, IC=0
-5
ICBO
Collector Cut-off Current
VCB= -50V, IE=0
hFE
DC Current Gain
VCE= -10V, IC= -0.1mA
VCE= -10V, IC= -1.0mA
VCE= -10V, IC= -10mA
*VCE= -10V, IC= -150mA
*VCE= -10V, IC= -500mA
Max.
V
V
-0.01
75
100
100
100
50
Units
V
µA
300
VCE (sat)
* Collector-Emitter Saturation Voltage
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
-0.4
-1.6
V
V
VBE (sat)
* Base-Emitter Saturation Voltage
IC= -150mA, IB= -15mA
IC= -500mA, IB= -50mA
-1.3
-2.6
V
V
fT
Current Gain Bandwidth Product
IC= -50mA, VCE= -20V
f=100MHz
Cob
Output Capacitance
VCB= -10V, IE=0, f=1.0MHz
8
pF
tON
Turn On Time
VCC= -30V, IC= -150mA
IB1= -15mA
50
ns
tOFF
Turn Off Time
VCC= -6V, IC= -150mA
IB1=IB2= -15mA
110
ns
200
MHz
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking
2F
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KST2907A
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = 10V
100
10
-1
-10
-100
-10
IC = 10 IB
VBE(sat)
-1
-0.1
VCE(sat)
-0.01
-1000
-1
IC[A], COLLECTOR CURRENT
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
12
8
6
4
2
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
1000
IE = 0
f = 1MHz
10
Cob [pF], CAPACITANCE
-10
VCE = -20V
100
10
0
-1
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Output Capacitance
©2002 Fairchild Semiconductor Corporation
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
Rev. A2, November 2002
KST2907A
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1