2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC (max)=625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -160 Units V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage IC -5 V Collector Current -600 mA PC Collector Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100µA, IE=0 Min. -160 Typ. Max. Units V BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -150 V BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V ICBO Collector Cut-off Current VCB= -120V, IE=0 -50 nA IEBO Emitter Cut-off Current VEB= -3V, IC=0 -50 nA hFE * DC Current Gain IC= -1mA, VCE= -5V IC= -10mA, VCE= -5V IC= -50mA, VCE= -5V 30 60 50 240 VCE (sat) * Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA -0.2 -0.5 V V VBE (sat) * Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA -1 -1 V V fT Current Gain Bandwidth Product IC= -10mA, VCE= -10V, f=100MHz 400 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF NF Noise Figure IC= -250µA, VCE= -5V RS=1KΩ f=10Hz to 15.7KHz 8 dB 100 * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 2N5401 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = -5V 100 10 -1 -10 -100 -1000 -10 IC = 10 IB VBE(sat) -1 VCE(sat) -0.1 -0.01 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 -1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE IC [mA], COLLECTOR CURRENT VCE = -5V -100 -10 -1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE 10 1 0.1 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT -1000 Figure 4. Output Capacitance 1000 VCE = -10V 100 10 1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 2N5401 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11