FAIRCHILD 2N5401TA

2N5401
2N5401
Amplifier Transistor
• Collector-Emitter Voltage: VCEO= 150V
• Collector Dissipation: PC (max)=625mW
• Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
-160
Units
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
IC
-5
V
Collector Current
-600
mA
PC
Collector Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -100µA, IE=0
Min.
-160
Typ.
Max.
Units
V
BVCEO
* Collector-Emitter Breakdown Voltage
IC= -1mA, IB=0
-150
V
BVEBO
Emitter-Base Breakdown Voltage
IE= -10µA, IC=0
-5
V
ICBO
Collector Cut-off Current
VCB= -120V, IE=0
-50
nA
IEBO
Emitter Cut-off Current
VEB= -3V, IC=0
-50
nA
hFE
* DC Current Gain
IC= -1mA, VCE= -5V
IC= -10mA, VCE= -5V
IC= -50mA, VCE= -5V
30
60
50
240
VCE (sat)
* Collector-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
-0.2
-0.5
V
V
VBE (sat)
* Base-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
-1
-1
V
V
fT
Current Gain Bandwidth Product
IC= -10mA, VCE= -10V,
f=100MHz
400
MHz
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
6
pF
NF
Noise Figure
IC= -250µA, VCE= -5V
RS=1KΩ
f=10Hz to 15.7KHz
8
dB
100
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
2N5401
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = -5V
100
10
-1
-10
-100
-1000
-10
IC = 10 IB
VBE(sat)
-1
VCE(sat)
-0.1
-0.01
-1
-10
-100
IC[mA], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
-1000
IE = 0
f = 1MHz
Cob [pF], CAPACITANCE
IC [mA], COLLECTOR CURRENT
VCE = -5V
-100
-10
-1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
10
1
0.1
-1
-10
-100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
-1000
Figure 4. Output Capacitance
1000
VCE = -10V
100
10
1
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product
©2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
2N5401
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. B, May 2004
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I11