MCP6566/6R/6U/7/9
1.8V Low-Power Open-Drain Output Comparator
Features:
Description:
• Propagation Delay at 1.8VDD:
- 56 ns (typical) High-to-Low
• Low Quiescent Current: 100 µA (typical)
• Input Offset Voltage: ±3 mV (typical)
• Rail-to-Rail Input: VSS - 0.3V to VDD + 0.3V
• Open-Drain Output
• Wide Supply Voltage Range: 1.8V to 5.5V
• Available in Single, Dual and Quad
• Packages: SC70, SOT-23-5, SOIC, MSOP,
TSSOP
The Microchip Technology, Inc. MCP6566/6R/6U/7/9
families of open-drain output comparators are offered
in single, dual and quad configurations.
Typical Applications:
Laptop Computers
Mobile Phones
Hand-held Electronics
RC Timers
Alarm and Monitoring Circuits
Window Comparators
Multi-vibrators
This family operates with single supply voltage of 1.8V
to 5.5V while drawing less than 100 µA/comparator of
quiescent current (typical).
Package Types
MCP6566
SOT-23-5, SC70-5
+IN 3
MCP6566R
4 -IN
-
MCP656X
VIN+ 1
VSS 2
VIN– 3
6 -INB
5 +INB
OUTA 1
-INA 2
-
+
VOUT
+ -
SOIC, TSSOP
5 VSS
MCP6566U
SOT-23-5
+5VDD
VDD
OUT 1
VDD 2
+IN 3
+3VPU
+INA 3
MCP6569
SOT-23-5
Typical Application
VIN
4 -IN
8 VDD
7 OUTB
- +
VSS 4
Related Device:
• Push-Pull Output: MCP6561/1R/1U/2/4
MCP6567
SOIC, MSOP
5 VDD OUTA 1
-INA 2
-
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
+
OUT 1
VSS 2
Design Aids:
+
•
•
•
•
•
•
•
These comparators are optimized for low-power 1.8V,
single-supply applications with greater than rail-to-rail
input operation. The internal input hysteresis eliminates
output switching due to internal input noise voltage,
reducing current draw. The open-drain output of the
MCP6566/6R/6U/7/9 family requires a pull-up resistor
and it supports pull-up voltages above and below VDD,
which can be used to level shift. The output toggle
frequency can reach a typical of 4 MHz (typical) while
limiting supply current surges and dynamic power
consumption during switching.
14 OUTD
- +
+ -
+INA 3
13 -IND
12 +IND
VDD 4
11 VSS
+INB 5
10 +INC
-INB 6
5 VDD OUTB 7
- + + -
9 -INC
8 OUTC
4 OUT
R2
R3
RF
2011 Microchip Technology Inc.
DS22143C-page 1
MCP6566/6R/6U/7/9
NOTES:
DS22143C-page 2
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
*Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
VDD - VSS ....................................................................... 6.5V
Open-Drain Output.............................................VSS + 10.5V
All other inputs and outputs...........VSS – 0.3V to VDD + 0.3V
Difference Input voltage ......................................|VDD - VSS|
Output Short Circuit Current .................................... ±25 mA
Current at Input Pins .................................................. ±2 mA
Current at Output and Supply Pins .......................... ±50 mA
Storage temperature ................................... -65°C to +150°C
Ambient temp. with power applied .............. -40°C to +125°C
Junction temp............................................................ +150°C
ESD protection on all pins (HBM/MM)4 kV/300V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS,
and RPull-Up = 20 k to VPU = VDD (see Figure 1-1).
Parameters
Symbol
Min
Typ
Max
Units
Conditions
VDD
1.8
—
5.5
V
IQ
60
100
130
µA
IOUT = 0
PSRR
63
70
—
dB
VCM = VSS
3
2
1
+10
mV
VCM = VSS (Note 1)
—
µV/°C
—
pA
Power Supply
Supply Voltage
Quiescent Current per comparator
Power Supply Rejection Ratio
Input
Input Offset Voltage
Input Offset Drift
Input Offset Current
Input Bias Current
Input Hysteresis Voltage
VOS
-10
VOS/T
—
IOS
—
IB
—
1
—
pA
TA = +25°C, VIN- = VDD/2
—
60
—
pA
TA = +85°C, VIN- = VDD/2
TA = +125°C, VIN- = VDD/2
VCM = VSS (Notes 1, 2)
—
1500
5000
pA
VHYST
1.0
—
5.0
mV
Input Hysteresis Linear Temp. Co.
TC1
—
10
—
µV/°C
Input Hysteresis Quadratic Temp. Co.
TC2
—
0.3
—
µV/°C2
Common-Mode Input Voltage Range
VCMR
Common-Mode Rejection Ratio
Common Mode Input Impedance
Differential Input Impedance
Note 1:
2:
3:
4:
CMRR
ZCM
ZDIFF
VCM = VSS
VCM = VSS
VSS0.2
—
VDD+0.2
V
VDD = 1.8V
VSS0.3
—
VDD+0.3
V
VDD = 5.5V
54
66
—
dB
VCM= -0.3V to VDD+0.3V, VDD = 5.5V
50
63
—
dB
VCM= VDD/2 to VDD+0.3V, VDD = 5.5V
54
65
—
dB
VCM= -0.3V to VDD/2, VDD = 5.5V
—
1013||4
—
||pF
—
13
—
||pF
10 ||2
The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
VHYST at different temperatures is estimated using VHYST (TA) = VHYST @ +25°C + (TA - 25°C) TC1 + (TA - 25°C)2 TC2.
Limit the output current to Absolute Maximum Rating of 50 mA.
The pull-up voltage for the open drain output VPULL_UP can be as high as the absolute maximum rating of 10.5V. In this
case, IOH_leak can be higher than 1 µA (see Figure 2-30).
2011 Microchip Technology Inc.
DS22143C-page 3
MCP6566/6R/6U/7/9
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS,
and RPull-Up = 20 k to VPU = VDD (see Figure 1-1).
Parameters
Symbol
Min
Typ
Max
Units
VPULL_UP
1.6
VOH
—
IOH_leak
Conditions
—
5.5
V
—
VPULL_UP
V
(see Figure 1-1) (Notes 3, 4)
—
—
1
µA
Note 4
VOL
—
—
0.6
V
IOUT = 3 mA/8 mA @ VDD = 1.8V/5.5V
ISC
—
±30
—
mA
COUT
—
8
—
pF
Push-Pull Output
Pull-up Voltage
High Level Output Voltage
High Level Output Current leakage
Low Level Output Voltage
Short Circuit Current (Notes 3)
Output Pin Capacitance
Note 1:
2:
3:
4:
Not to exceed Absolute Max. Rating
The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
VHYST at different temperatures is estimated using VHYST (TA) = VHYST @ +25°C + (TA - 25°C) TC1 + (TA - 25°C)2 TC2.
Limit the output current to Absolute Maximum Rating of 50 mA.
The pull-up voltage for the open drain output VPULL_UP can be as high as the absolute maximum rating of 10.5V. In this
case, IOH_leak can be higher than 1 µA (see Figure 2-30).
AC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated,: Unless otherwise indicated,: VDD = +1.8V to +5.5V, VSS = GND,
TA = +25°C, VIN+ = VDD/2, VIN- = VSS, RPull-Up = 20 k to VPU = VDD, and CL = 25 pf (see Figure 1-1).
Parameters
Symbol
Min
Typ
Max
Units
Conditions
tPHL
—
56
80
ns
VCM= VDD/2, VDD = 1.8V
—
34
80
ns
VCM= VDD/2, VDD = 5.5V
—
20
—
ns
Propagation Delay
High-to-Low,100 mV Overdrive
Output
Fall Time
tF
Maximum Toggle Frequency
Input Voltage Noise
Note 1:
2:
fTG
ENI
—
4
—
MHz
VDD = 5.5V
—
2
—
MHz
VDD = 1.8V
—
350
—
µVP-P
10 Hz to 10 MHz (Note 1)
ENI is based on SPICE simulation.
Rise time tR and tPLH depend on the load (RL and CL). These specification are valid for the specified load only.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated: VDD = +1.8V to +5.5V and VSS = GND.
Parameters
Symbol
Min
Typ
Max
Units
Specified Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, SC70-5
JA
—
331
—
°C/W
Thermal Resistance, SOT-23-5
JA
—
220.7
—
°C/W
Thermal Resistance, 8L-MSOP
JA
—
211
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
149.5
—
°C/W
Thermal Resistance, 14L-SOIC
JA
—
95.3
—
°C/W
Thermal Resistance, 14L-TSSOP
JA
—
100
—
°C/W
Conditions
Temperature Ranges
Thermal Package Resistances
DS22143C-page 4
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
1.2
Test Circuit Configuration
This test circuit configuration is used to determine the
AC and DC specifications.
VDD
MCP656X
VPU = VDD
200 k
IOUT
VOUT
25 pF
200 k
VIN = VSS
RPU
20 k
VSS = 0V
FIGURE 1-1:
AC and DC Test Circuit for
the Open-Drain Output Comparators.
2011 Microchip Technology Inc.
DS22143C-page 5
MCP6566/6R/6U/7/9
NOTES:
DS22143C-page 6
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD /2, VIN – = GND,
RL = 20 k to VPU = VDD , and CL = 25 pF.
40%
30%
30%
VDD = 5.5V
VCM = VSS
Avg. = -0.9 mV
StDev = 2.1 mV
3588 units
VDD = 1.8V
VCM = VSS
Avg. = -0.1 mV
StDev = 2.1 mV
3588 units
Occurrences (%)
Occurrences (%)
50%
20%
10%
0%
-6
FIGURE 2-1:
40%
-4
-2 0
2
VOS (mV)
4
6
8
Input Offset Voltage.
10%
1.0
0%
36
48
Input Offset Voltage Drift.
VDD = 5.5V
VOUT
VIN -
3.0
2.0
1.0
0.0
Time (3 µs/div)
Input vs. Output Signal, No
2011 Microchip Technology Inc.
2.5 3.0 3.5
VHYST (mV)
4.0
4.5
5.0
Input Hysteresis Voltage.
VDD = 1.8V
Avg. = 12 µV/°C
StDev = 0.6 µV/°C
20%
1380 Units
TA = -40°C to 125°C
VCM = VSS
10%
2
4
6
8 10 12 14 16
VHYST Drift, TC1 (µV/°C)
18
20
FIGURE 2-5:
Input Hysteresis Voltage
Drift - Linear Temp. Co. (TC1).
30%
20%
10%
VDD = 5.5V
VDD = 1.8V
Avg. = 0.25 µV/°C2
2
StDev = 0.1 µV/°C
Avg. = 0.3 µV/°C
StDev = 0.2 µV/°C 2
2
1380 Units
TA = -40°C to +125°C
VCM = VSS
0%
-0.50
-1.0
FIGURE 2-3:
Phase Reversal.
2.0
30%
0
VIN+ = VDD /2
5.0
VOUT (V)
40%
60
Occurrences (%)
FIGURE 2-2:
1.5
VDD = 5.5V
Avg. = 10.4 µV/°C
StDev = 0.6 µV/°C
50%
0%
-60 -48 -36 -24 -12 0 12 24
VOS Drift (µV/°C)
4.0
5%
60%
VCM = VSS
Avg. = 0.9 µV/°C
StDev = 6.6 µV/°C
1380 Units
TA = -40°C to +125°C
20%
6.0
10%
FIGURE 2-4:
30%
7.0
15%
10
Occurrences (%)
Occurrences (%)
50%
20%
VDD = 5.5V
Avg. = 3.6 mV
StDev = 0.1 mV
3588 units
0%
-10 -8
60%
VDD = 1.8V
Avg. = 3.4 mV
StDev = 0.2 mV
3588 units
25%
-0.25
0.00
0.25
0.50
0.75
VHYST Drift, TC2 (µV/°C2)
1.00
FIGURE 2-6:
Input Hysteresis Voltage
Drift - Quadratic Temp. Co. (TC2).
DS22143C-page 7
MCP6566/6R/6U/7/9
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD /2, VIN – = GND,
RL = 20 k to VPU = VDD , and CL = 25 pF.
3.0
5.0
VCM = VSS
2.0
VCM = VSS
VDD = 1.8V
VHYST (mV)
V OS (mV)
4.0
1.0
0.0
-1.0
3.0
VDD= 1.8V
2.0
VDD = 5.5V
-2.0
VDD= 5.0V
-3.0
1.0
-50
-25
0
FIGURE 2-7:
Temperature.
4.0
25
50
75
Temperature (°C)
100
125
Input Offset Voltage vs.
-50
-25
0
FIGURE 2-10:
Temperature.
25
50
75
Temperature (°C)
5.0
VDD = 1.8V
2.0
TA= +125°C
4.0
V HYST (mV)
TA= +85°C
0.0
TA= +25°C
TA= -40°C
-2.0
3.0
TA= +25°C
2.0
TA= +85°C
VDD = 1.8V
-4.0
-0.3
0.0
0.3
0.6
0.9 1.2
VCM (V)
1.5
1.8
1.0
-0.3
2.1
FIGURE 2-8:
Input Offset Voltage vs.
Common-mode Input Voltage.
3.0
TA= +25°C
0.0
-1.0
0.9
1.2
VCM (V)
1.5
1.8
2.1
-2.0
3.0
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
2.0
TA= +85°C
TA= +125°C
1.0
2.0
3.0
VCM (V)
4.0
5.0
FIGURE 2-9:
Input Offset Voltage vs.
Common-mode Input Voltage.
DS22143C-page 8
0.6
4.0
TA= -40°C
1.0
0.0
0.3
5.0
VDD = 5.5V
V HYST (mV)
VOS (mV)
0.0
TA= -40°C
FIGURE 2-11:
Input Hysteresis Voltage vs.
Common-mode Input Voltage.
2.0
-3.0
-1.0
125
Input Hysteresis Voltage vs.
TA= +125°C
VOS (mV)
100
6.0
1.0
-0.5
0.5
1.5
VDD = 5.5V
2.5
3.5
VCM (V)
4.5
5.5
FIGURE 2-12:
Input Hysteresis Voltage vs.
Common-mode Input Voltage.
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD /2, VIN – = GND,
RL = 20 k to VPU = VDD , and CL = 25 pF.
3.0
5.0
0.0
TA= +125°C
TA= +85°C
4.0
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
1.0
V HYST (mV)
VOS (mV)
2.0
-1.0
TA= +25°C
3.0
TA= -40°C
2.0
-2.0
-3.0
1.0
1.5
2.5
3.5
VDD (V)
4.5
5.5
1.5
FIGURE 2-13:
Input Offset Voltage vs.
Supply Voltage vs. Temperature.
4.5
5.5
140.0
VDD = 5.5V
Avg. = 97 µA
StDev= 4 µA
1794 units
VDD = 1.8V
Avg. = 88 µA
StDev= 4 µA
1794 units
40%
30%
20%
120.0
100.0
IQ (µA)
Occurrences (%)
3.5
VDD (V)
FIGURE 2-16:
Input Hysteresis Voltage vs.
Supply Voltage vs. Temperature.
50%
80.0
60.0
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
40.0
10%
20.0
0%
0.0
60
70
FIGURE 2-14:
130
120
80
90
100
IQ (µA)
110
120
130
Quiescent Current.
0.0
130
VDD = 1.8V
120
2.0
IQ (µA)
Sweep VIN+ ,VIN - = VDD/2
90
80
0.0
0.5
1.0
VCM (V)
1.5
2.0
FIGURE 2-15:
Quiescent Current vs.
Common-mode Input Voltage.
2011 Microchip Technology Inc.
4.0
5.0
6.0
Sweep VIN+ ,VIN - = VDD/2
100
90
Sweep VIN - ,VIN+ = VDD/2
80
Sweep VIN- ,VIN+ = VDD /2
V /2
70
3.0
V DD (V)
VDD = 5.5V
110
100
60
-0.5
1.0
FIGURE 2-17:
Quiescent Current vs.
Supply Voltage vs Temperature.
110
IQ (µA)
2.5
70
2.5
60
-1.0
0.0
1.0
2.0
3.0
VCM (V)
4.0
5.0
6.0
FIGURE 2-18:
Quiescent Current vs.
Common-mode Input Voltage.
DS22143C-page 9
MCP6566/6R/6U/7/9
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD /2, VIN – = GND,
RL = 20 k to VPU = VDD , and CL = 25 pF.
150
150
IDD Spike near VPU = 0.9V
VDD = 5.5 V
VDD = 5.5V
VDD = 4.5V
VDD = 3.5V
100
VDD = 2.5V
VDD = 2.0V
VDD = 1.8V
75
-2.5
-0.5
100,000
0dB Output Attenuation
1.5
3.5
VPU - V DD (V)
5.5
7.5
9.5
TA =
10,000
VDD = 5.5V
250
200
VDD = 1.8V
150
VDD = 2.0 V
FIGURE 2-22:
Quiescent Current vs.
Pull-up to Supply Voltage Difference.
IOH_leak (pA)
IQ (µA)
300
VDD = 2.5 V
VDD = 1.8 V
Quiescent Current vs.
100 mV Over-Drive
VCM = VDD/2
RL = Open
350
100
50
-4.5
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5
V PU (V)
400
VDD = 3.5 V
75
50
FIGURE 2-19:
Pull-up Voltage.
VDD = 4.5 V
125
IQ (µA)
IQ (µA)
125
1,000
TA = +85°C
100
TA = +25°C
10
100
1
50
10
10
100
100
FIGURE 2-20:
Quiescent Current vs.
Toggle Frequency.
1000
1.5 2.5
1k
10k 100000
100k 100000
1M
10M
1000
10000
1E+07
Toggle Frequency (Hz)
0
FIGURE 2-23:
Pull-up Voltage.
1000
VDD= 1.8V
Output Leakage Current vs.
VDD= 5.5V
800
VOL (mV)
800
VOL (mV)
3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5
VPU (V)
600
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
400
200
TA = +125°C
125°C
TA = +85°C
TA = +25°C
TA = -40°C
600
400
200
0
0
0.0
3.0
FIGURE 2-21:
Current.
DS22143C-page 10
6.0
9.0
IOUT (mA)
12.0
15.0
Output Headroom vs Output
0
FIGURE 2-24:
Current.
5
10
15
IOUT (mA)
20
25
Output Headroom Vs Output
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD /2, VIN – = GND,
RL = 20 k to VPU = VDD , and CL = 25 pF.
50%
VDD = 1.8V
100 mV Over-Drive
VCM = VDD /2
40%
Occurrences (%)
Occurrences (%)
50%
tPHL
Avg. = 54.4 ns
StDev= 2 ns
198 units
30%
20%
10%
0%
40%
30%
20%
10%
0%
30
35
40
45
50
55
60
65
70
75
80
30
35
40
45
Prop. Delay (ns)
FIGURE 2-25:
Delays.
High-to-Low Propagation
FIGURE 2-28:
Delays.
260
70
75
80
High-to-Low Propagation
100 mV Over-Drive
VCM = VDD/2
70
210
Prop. Delay (ns)
Prop. Delay (ns)
50 55 60 65
Prop. Delay (ns)
80
VCM = VDD/2
tPHL , VDD = 1.8V
160
110
tPHL , VDD = 5.5V
60
tPHL , VDD = 1.8V
60
50
40
30
10
tPHL , VDD = 5.5V
20
1
10
100
1000
-50
-25
Over-Drive (mV)
FIGURE 2-26:
Over-Drive.
Propagation Delay vs. Input
FIGURE 2-29:
Temperature.
120
140
VCM = VDD /2
120
100
tPHL , 10 mV Over-Drive
80
60
tPHL , 100 mV Over-Drive
0
25
50
75
Temperature (°C)
20
40
0
-40
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
-120
1.5
FIGURE 2-27:
Supply Voltage.
2.5
3.5
V DD (V)
4.5
Propagation Delay vs.
2011 Microchip Technology Inc.
5.5
125
Propagation Delay vs.
-80
40
100
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
80
ISC (mA)
Prop. Delay (ns)
VDD= 5.5V
100mV Over-Drive
VCM = VDD/2
tPHL
Avg. = 33 ns
StDev= 1 ns
198 units
0.0
1.0
2.0
3.0
VDD (V)
4.0
5.0
6.0
FIGURE 2-30:
Short Circuit Current vs.
Supply Voltage vs. Temperature.
DS22143C-page 11
MCP6566/6R/6U/7/9
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD /2, VIN – = GND,
RL = 20 k to VPU = VDD , and CL = 25 pF.
80
80
VDD= 1.8V
100 mV Over-Drive
70
Prop. Delay (ns)
Prop. Delay (ns)
70
tPHL
60
50
40
20
0.00
tPHL
50
40
20
0.50
1.00
VCM (V)
1.50
2.00
FIGURE 2-31:
Propagation Delay vs.
Common-mode Input Voltage.
0.0
10000
100mV Over-Drive
VCM = VDD /2
VDD = 1.8V, tPHL
Prop. Delay (ns)
100
10
VDD = 5.5V, tPHL
1
0.1
0.01
0.001
1
0.01
10
1000
6.0
tPLH
Prop. Delay (ns)
TA= -40°C
TA= +25°C
TA= +85°C
TA= +125°C
10p
1E+01
1.0
10.0
100.0
RPU (kΩ)
FIGURE 2-35:
Pull-up Resistor.
Propagation Delay vs.
10µ
1E+07
Propagation Delay vs.
100 mV Over-Drive
VCM = VDD /2
tPLH, VDD = 5.5V
1000
tPLH, VDD = 1.8V
tPHL, VDD = 1.8V
100
tPLH, VDD = 5.5V
10
-0.6
-0.4
-0.2
0
Input Voltage (V)
FIGURE 2-33:
Input Bias Current vs. Input
Voltage vs Temperature.
DS22143C-page 12
5.0
tPHL
10000
0.1p
1E-01
-0.8
4.0
100
1m
1E+09
1n
1E+03
3.0
VCM (V)
100 mV Over-Drive
VCM = VDD/2
0.1
10m
1E+11
100n
1E+05
2.0
10
0.1
1
10
100 1E+06
1000
100
1000
10000
100000
Capacitive Load (nf)
FIGURE 2-32:
Capacitive Load.
1.0
FIGURE 2-34:
Propagation Delay vs.
Common-mode Input Voltage.
1000
Prop. Delay (µs)
60
30
30
Input Current (A)
VDD= 5.5V
100 mV Over-Drive
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V PU (V)
FIGURE 2-36:
Pull-up Voltage.
Propagation Delay vs.
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD /2, VIN – = GND,
RL = 20 k to VPU = VDD , and CL = 25 pF.
80
30%
78
VCM = VSS
VDD = 1.8V to 5.5V
76
Occurrences (%)
CMRR/PSRR (dB)
Input Referred
PSRR
74
CMRR
72
VCM = -0.3V to VDD + 0.3V
VDD = 5.5V
20%
10%
70
0
25
50
75
Temperature (°C)
100
125
30%
VDD = 1.8V
3588 units
20%
-4
-3
-2
-1
0
1
2
3
4
5
CMRR (mV/V)
VCM = VSS
Avg. = 200 µV/V
StDev= 94 µV/V
3588 units
25%
-5
15%
10%
FIGURE 2-40:
Ratio (CMRR).
30%
Occurrences (%)
-25
FIGURE 2-37:
Common-mode Rejection
Ratio and Power Supply Rejection Ratio vs.
Temperature.
Occurrences (%)
VCM = -0.2V to VDD /2
Avg. = 0.5 mV
StDev= 0.1 mV
0%
-50
Common-mode Rejection
VCM = VDD/2 to VDD+ 0.3V
Avg. = 0.03 mV
StDev= 0.7 mV
V CM = -0.3V to V DD + 0.3V
Avg. = 0.1 mV
StDev= 0.4 mV
20%
10%
VCM = -0.3V to VDD/2
Avg. = 0.2 mV
StDev= 0.4 mV
VDD = 5.5V
3588 units
5%
0%
-2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5
0%
-600
-400
-200
0
200
400
600
CMRR (mV/V)
PSRR (µV/V)
FIGURE 2-38:
Ratio (PSRR).
Power Supply Rejection
1000
FIGURE 2-41:
Ratio (CMRR).
Common-mode Rejection
10000
IOS and IB (pA)
100
IB
10
1
|I OS|
IB @ TA= +85°C
100
10
1
|IOS| @ TA= +125°C
0.1
|IOS|@ TA= +85°C
0.01
0.1
VDD = 5.5V
IB @ TA= +125°C
1000
IOS and IB (pA)
VCM = -0.2V to VDD + 0.2V
Avg. = 0.6 mV
StDev= 0.1 mV
VCM = VDD/2 to VDD+ 0.2V
Avg. = 0.7 mV
StDev= 1 mV
0.001
25
50
75
100
Temperature (°C)
125
FIGURE 2-39:
Input Offset Current and
Input Bias Current vs. Temperature.
2011 Microchip Technology Inc.
0
1
2
3
V CM (V)
4
5
6
FIGURE 2-42:
Input Offset Current and
Input Bias Current vs. Common-mode Input
Voltage vs. Temperature.
DS22143C-page 13
MCP6566/6R/6U/7/9
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD /2, VIN – = GND,
RL = 20 k to VPU = VDD , and CL = 25 pF.
Output Jitter pk-pk (ns)
10000
VDD = 5.5V
1000
VIN+ = 2Vpp (sine)
100
10
1
0.1
100
100
1k
1000
FIGURE 2-43:
Frequency.
DS22143C-page 14
10k
100k
1M
10000
100000
100000
Input Frequency (Hz) 0
10M
1E+07
Output Jitter vs. Input
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP6566
MCP6566R
MCP6566U
MCP6567
MCP6569
SC70-5,
SOT-23-5
SOT-23-5
SOT-23-5
MSOP,
SOIC
SOIC,
TSSOP
1
1
5
1
1
3.1
Description
OUT, OUTA Digital Output (comparator A)
4
4
3
2
2
VIN–, VINA–
Inverting Input (comparator A)
3
3
1
3
3
VIN+, VINA+
Non-inverting Input (comparator A)
5
2
4
8
4
VDD
—
—
—
5
5
VINB+
Non-inverting Input (comparator B)
Inverting Input (comparator B)
Digital Output (comparator B)
Positive Power Supply
—
—
—
6
6
VINB–
—
—
—
7
7
OUTB
—
—
—
—
8
OUTC
Digital Output (comparator C)
—
—
—
—
9
VINC–
Inverting Input (comparator C)
—
—
—
—
10
VINC+
2
5
2
4
11
VSS
—
—
—
—
12
VIND+
Non-inverting Input (comparator D)
—
—
—
—
13
VIND–
Inverting Input (comparator D)
—
—
—
—
14
OUTD
Digital Output (comparator D)
Analog Inputs
The comparator non-inverting and inverting inputs are
high-impedance CMOS inputs with low bias currents.
3.2
Symbol
Digital Outputs
The comparator outputs are CMOS, open-drain digital
outputs. They are designed to make level shifting and
wired-OR easy to implement.
2011 Microchip Technology Inc.
3.3
Non-inverting Input (comparator C)
Negative Power Supply
Power Supply (VSS and VDD)
The positive power supply pin (VDD) is 1.8V to 5.5V
higher than the negative power supply pin (VSS). For
normal operation, the other pins are at voltages
between VSS and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need a local bypass capacitor (typically 0.01 µF to
0.1 µF) within 2 mm of the VDD pin. These can share a
bulk capacitor with nearby analog parts (within
100 mm), but it is not required.
DS22143C-page 15
MCP6566/6R/6U/7/9
NOTES:
DS22143C-page 16
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
4.0
APPLICATIONS INFORMATION
The MCP6566/6R/6U/7/9 family of open-drain output
comparators
are
fabricated
on
Microchip’s
state-of-the-art CMOS process. They are suitable for a
wide range of high speed applications requiring lowpower consumption.
4.1
Comparator Inputs
4.1.1
NORMAL OPERATION
The input stage of this family of devices uses two
differential input stages in parallel. This configuration
provides three regions of operation, one operates at
low input voltages, one at high input voltages, and one
at mid input voltage. With this topology, the input
voltage range is 0.3V above VDD and 0.3V below VSS,
while providing low offset voltage throughout the
common mode range. The input offset voltage is
measured at both VSS - 0.3V and VDD + 0.3V to ensure
proper operation.
8
7
6
5
4
3
2
1
0
-1
-2
-3
VDD = 5.0V
VIN–
VOUT
Hysteresis
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
Input Voltage (10 mV/div)
Output Voltage (V)
The MCP6566/6R/6U/7/9 family has internally-set
hysteresis VHYST that is small enough to maintain input
offset accuracy and large enough to eliminate output
chattering caused by the comparator’s own input noise
voltage ENI. Figure 4-1 depicts this behavior. Input
offset voltage (VOS) is the center (average) of the
(input-referred) low-high and high-low trip points. Input
hysteresis voltage (VHYST) is the difference between
the same trip points.
4.1.2
INPUT VOLTAGE AND CURRENT
LIMITS
The ESD protection on the inputs can be depicted as
shown in Figure 4-2. This structure was chosen to
protect the input transistors, and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
VSS. They also clamp any voltages that go too far
above VDD; their breakdown voltage is high enough to
allow normal operation, and low enough to bypass ESD
events within the specified limits.
VDD Bond
Pad
VIN+
Bond
Pad
Input
Stage
VIN–
VSS Bond
Pad
FIGURE 4-2:
Structures.
Simplified Analog Input ESD
In order to prevent damage and/or improper operation
of these amplifiers, the circuits they are in must limit the
currents (and voltages) at the VIN+ and VIN– pins (see
Section 1.1 “Maximum Ratings*” at the beginning of
Section 1.0 “Electrical Characteristics”). Figure 4-3
shows the recommended approach to protecting these
inputs. The internal ESD diodes prevent the input pins
(VIN+ and VIN–) from going too far below ground, and
the resistors R1 and R2 limit the possible current drawn
out of the input pin. Diodes D1 and D2 prevent the input
pin (VIN+ and VIN–) from going too far above VDD.
When implemented as shown, resistors R1 and R2 also
limit the current through D1 and D2.
VDD
Time (100 ms/div)
FIGURE 4-1:
The MCP6566/6R/6U/7/9
comparators’ internal hysteresis eliminates
output chatter caused by input noise voltage.
Bond
Pad
D1
R4
+
V1
VPU
VOUT
MCP656X
–
R1
D2
V2
R2
R1
VSS – (minimum expected V1)
2 mA
R2
VSS – (minimum expected V2)
2 mA
FIGURE 4-3:
Inputs.
2011 Microchip Technology Inc.
R3
Protecting the Analog
DS22143C-page 17
MCP6566/6R/6U/7/9
It is also possible to connect the diodes to the left of the
resistors R1 and R2. In this case, the currents through
the diodes D1 and D2 need to be limited by some other
mechanism. The resistor then serves as in-rush current
limiter; the DC current into the input pins (VIN+ and
VIN–) should be very small.
4.3.1
NON-INVERTING CIRCUIT
Figure 4-4 shows a non-inverting circuit for
single-supply applications using just two resistors. The
resulting hysteresis diagram is shown in Figure 4-5.
A significant amount of current can flow out of the
inputs when the common mode voltage (VCM) is below
ground (VSS); see Figure 4-3. Applications that are
high-impedance may need to limit the usable voltage
range.
VPU
VDD
RPU
-
VREF
MCP656X
VOUT
+
4.1.3
PHASE REVERSAL
The MCP6566/6R/6U/7/9 comparator family uses
CMOS transistors at the input. They are designed to
prevent phase inversion when the input pins exceed
the supply voltages. Figure 2-3 shows an input voltage
exceeding both supplies with no resulting phase
inversion.
4.2
R1
Externally Set Hysteresis
Greater flexibility in selecting hysteresis (or input trip
points) is achieved by using external resistors.
Hysteresis reduces output chattering when one input is
slowly moving past the other. It also helps in systems
where it is best not to cycle between high and low
states too frequently (e.g., air conditioner thermostatic
control). Output chatter also increases the dynamic
supply current.
RF
FIGURE 4-4:
Non-Inverting Circuit with
Hysteresis for Single-Supply.
Open-Drain Output
The open-drain output is designed to make
level-shifting and wired-OR logic easy to implement.
The output stage minimizes switching current
(shoot-through current from supply-to-supply) when
the output changes state. See Figures 2-15, 2-18,
2-35 and 2-36, for more information.
4.3
VIN
VOUT
VDD
VOH
High-to-Low
Low-to-High
VIN
VOL
VSS
VSS
VTHL VTLH
VDD
FIGURE 4-5:
Hysteresis Diagram for the
Non-Inverting Circuit.
The trip points for Figures 4-4 and 4-5 are:
EQUATION 4-1:
R1
R1
VTLH = V REF 1 + ------- – V OL -------
R
RF
F
R1
R 1
VTHL = V REF 1 + ------- – V OH -------
RF
RF
Where:
DS22143C-page 18
VTLH
=
trip voltage from low-to-high
VTHL
=
trip voltage from high-to-low
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
4.3.2
INVERTING CIRCUIT
Where:
R2 R3
R 23 = ------------------R2 + R3
Figure 4-6 shows an inverting circuit for single-supply
using three resistors. The resulting hysteresis diagram
is shown in Figure 4-7.
R3
V 23 = ------------------- VDD
R 2 + R3
VPU
VDD
VIN
Using this simplified circuit, the trip voltage can be
calculated using the following equation:
RPU
VDD
MCP656X
VOUT
EQUATION 4-2:
R2
RF
R 23
V THL = V OH ----------------------- + V 23 ----------------------
R
+
R
R
23
23 + R F
F
RF
R3
RF
R23
V TLH = V OL ----------------------- + V 23 ----------------------
R
+
R
R
23
23 + R F
F
FIGURE 4-6:
Hysteresis.
Where:
Inverting Circuit with
VTLH
=
trip voltage from low-to-high
VTHL
=
trip voltage from high-to-low
VOUT
Figure 2-21 and Figure 2-24 can be used to determine
typical values for VOH and VOL.
VDD
VOH
Low-to-High
4.4
High-to-Low
VIN
VOL
VSS
VSS
VTLH VTHL
FIGURE 4-7:
Inverting Circuit.
VDD
Hysteresis Diagram for the
In order to determine the trip voltages (VTHL and VTLH)
for the circuit shown in Figure 4-6, R2 and R3 can be
simplified to the Thevenin equivalent circuit with
respect to VDD, as shown in Figure 4-8.
VPU
VDD
With this family of comparators, the power supply pin
(VDD for single supply) should have a local bypass
capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm for good
edge rate performance.
4.5
Capacitive Loads
Reasonable capacitive loads (e.g., logic gates) have
little impact on propagation delay (see Figure 2-32).
The supply current increases with increasing toggle
frequency (Figure 2-20), especially with higher
capacitive loads. The output slew rate and propagation
delay performance will be reduced with higher
capacitive loads.
RPU
MCP656X
+
Bypass Capacitors
VOUT
VSS
V23
R23
FIGURE 4-8:
RF
Thevenin Equivalent Circuit.
2011 Microchip Technology Inc.
DS22143C-page 19
MCP6566/6R/6U/7/9
4.6
PCB Surface Leakage
4.7
In applications where low input bias current is critical,
PCB (Printed Circuit Board) surface leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012. A 5V difference would
cause 5 pA of current to flow. This is greater than the
MCP6566/6R/6U/7/9 family’s bias current at +25°C
(1 pA, typical).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-9.
IN-
IN+
VSS
When designing the PCB layout it is critical to note that
analog and digital signal traces are adequately
separated to prevent signal coupling. If the comparator
output trace is at close proximity to the input traces
then large output voltage changes from, VSS to VDD or
visa versa, may couple to the inputs and cause the
device output to oscillate. To prevent such oscillation,
the output traces must be routed away from the input
pins. The SC70-5 and SOT-23-5 are relatively immune
because the output pin OUT (pin 1) is separated by the
power pin VDD/VSS (pin 2) from the input pin +IN (as
long as the analog and digital traces remain separated
throughout the PCB). However, the pinouts for the dual
and quad packages (SOIC, MSOP, TSSOP) have OUT
and -IN pins (pin 1 and 2) close to each other. The
recommended layout for these packages is shown in
Figure 4-10.
OUTA
VDD
-INA
OUTB
+INA
-INB
VSS
+INB
Guard Ring
FIGURE 4-9:
Example Guard Ring Layout
for Inverting Circuit.
1.
2.
Inverting Configuration (Figures 4-6 and 4-9):
a) Connect the guard ring to the non-inverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the
comparator (e.g., VDD/2 or ground).
b) Connect the inverting pin (VIN–) to the input
pad without touching the guard ring.
Non-inverting Configuration (Figure 4-4):
a) Connect the non-inverting pin (VIN+) to the
input pad without touching the guard ring.
b) Connect the guard ring to the inverting input
pin (VIN–).
PCB Layout Technique
FIGURE 4-10:
4.8
Recommended Layout.
Unused Comparators
An unused amplifier in a quad package (MCP6569)
should be configured as shown in Figure 4-11. This
circuit prevents the output from toggling and causing
crosstalk. It uses the minimum number of components
and draws minimal current (see Figure 2-15 and
Figure 2-15).
¼ MCP6569
VDD
–
+
FIGURE 4-11:
DS22143C-page 20
Unused Comparators.
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
4.9
Typical Applications
4.9.1
4.9.3
PRECISE COMPARATOR
Some applications require higher DC precision. An
easy way to solve this problem is to use an amplifier
(such as the MCP6291) to gain-up the input signal
before it reaches the comparator. Figure 4-12 shows
an example of this approach.
BISTABLE MULTI-VIBRATOR
A simple bistable multi-vibrator design is shown in
Figure 4-14. VREF needs to be between the power
supplies (VSS = GND and VDD) to achieve oscillation.
The output duty cycle changes with VREF.
VPU
R1
VDD
R2
VREF
VREF
MCP6291
RPU
VDD
VPU
VDD
MCP656X
RPU
VOUT
VIN
R1
MCP656X
R2
VOUT
VREF
FIGURE 4-12:
Comparator.
4.9.2
C1
Precise Inverting
FIGURE 4-14:
R3
Bistable Multi-vibrator.
WINDOWED COMPARATOR
Figure 4-13 shows one approach to designing a
windowed comparator. The AND gate produces a logic
‘1’ when the input voltage is between VRB and VRT
(where VRT > VRB).
VRT
VPU
1/2
MCP6567
RPU
VOUT
VIN
VRB
FIGURE 4-13:
1/2
MCP6567
Windowed Comparator.
2011 Microchip Technology Inc.
DS22143C-page 21
MCP6566/6R/6U/7/9
NOTES:
DS22143C-page 22
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
5.0
DESIGN AIDS
5.3
5.1
Microchip Advanced Part Selector
(MAPS)
The following Microchip Application Notes are
available
on
the
Microchip
web
site
at
www.microchip.com and are recommended as
supplemental reference resources:
MAPS is a software tool that helps semiconductor
professionals efficiently identify Microchip devices that
fit a particular design requirement. Available at no cost
from the Microchip web site at www.microchip.com/
maps, the MAPS is an overall selection tool for
Microchip’s product portfolio that includes Analog,
Memory, MCUs and DSCs. Using this tool you can
define a filter to sort features for a parametric search of
devices and export side-by-side technical comparison
reports. Helpful links are also provided for Data Sheets,
Purchase, and Sampling of Microchip parts.
5.2
Application Notes
• AN895, “Oscillator Circuit For RTD Temperature
Sensors”, DS00895.
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help you achieve faster time to market. For
a complete listing of these boards and their
corresponding user’s guides and technical information,
visit the Microchip web site at www.microchip.com/
analogtools. Three of our boards that are especially
useful are:
• 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board,
P/N SOIC8EV
• 14-Pin SOIC/TSSOP/DIP Evaluation Board, P/N
SOIC14EV
• 5/6-Pin SOT23 Evaluation Board, P/N VSUPEV2
2011 Microchip Technology Inc.
DS22143C-page 23
MCP6566/6R/6U/7/9
NOTES:
DS22143C-page 24
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
5-Lead SC70 (MCP6566)
Example:
BJ25
XXNN
5-Lead SOT-23 (MCP6566, MCP6566R)
Device
XXNN
Example:
Code
MCP6566T
JYNN
MCP6566RT
JZNN
MCP6566UT
WLNN
JY25
Note: Applies to 5-Lead SOT-23.
8-Lead MSOP (MCP6567)
Example:
XXXXXX
6567E
YWWNNN
040256
8-Lead SOIC (150 mil) (MCP6567)
XXXXXXXX
XXXXYYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
MCP6567E
e3
SN^^1040
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2011 Microchip Technology Inc.
DS22143C-page 25
MCP6566/6R/6U/7/9
Package Marking Information (Continued)
14-Lead SOIC (150 mil) (MCP6569)
Example:
MCP6569
E/SL^^
e3
1040256
XXXXXXXXXX
XXXXXXXXXX
YYWWNNN
14-Lead TSSOP (MCP6569)
XXXXXXXX
YYWW
NNN
DS22143C-page 26
Example:
MCP6569E
1040
256
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
.
#
#$#/!- 0 #
1/%#
#!#
##+22---
2/
D
b
3
1
2
E1
E
4
5
e
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e
A2
c
A1
L
3#
4#
5$8
%1
44""
5
5
56
7
(
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!!1//
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- *9)
2011 Microchip Technology Inc.
DS22143C-page 27
MCP6566/6R/6U/7/9
.
#
#$#/!- 0 #
1/%#
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2/
DS22143C-page 28
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
!
.
#
#$#/!- 0 #
1/%#
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##+22---
2/
b
N
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2011 Microchip Technology Inc.
DS22143C-page 29
MCP6566/6R/6U/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22143C-page 30
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
"
#
$%##
.
#
#$#/!- 0 #
1/%#
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b
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".+ % 0$ $-#
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0%
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- *)
2011 Microchip Technology Inc.
DS22143C-page 31
MCP6566/6R/6U/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22143C-page 32
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2011 Microchip Technology Inc.
DS22143C-page 33
MCP6566/6R/6U/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22143C-page 34
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
"
&'(!)*+,-
.
#
#$#/!- 0 #
1/%#
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##+22---
2/
2011 Microchip Technology Inc.
DS22143C-page 35
MCP6566/6R/6U/7/9
./
&'(!)*+,-
.
#
#$#/!- 0 #
1/%#
#!#
##+22---
2/
D
N
E
E1
NOTE 1
1
2
3
e
h
b
α
h
A
A2
c
φ
L
A1
β
L1
3#
4#
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56
7
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6,:#
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6,=!#
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1, $!&%#$,08$#$ #8
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".+ % 0$ $-#
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0%
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- *9()
DS22143C-page 36
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
.
#
#$#/!- 0 #
1/%#
#!#
##+22---
2/
2011 Microchip Technology Inc.
DS22143C-page 37
MCP6566/6R/6U/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22143C-page 38
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2011 Microchip Technology Inc.
DS22143C-page 39
MCP6566/6R/6U/7/9
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22143C-page 40
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
APPENDIX A:
REVISION HISTORY
Revision C (February 2011)
The following is the list of modifications:
1.
Replaced the MCP5468 package name with the
correct MCP6567 package name on page 1 and
in Table 3-1.
Revision B (August 2009)
The following is the list of modifications:
1.
2.
Added MCP6566U throughout the document.
Updated package outline drawings.
Revision A (March 2009)
• Original Release of this Document.
2011 Microchip Technology Inc.
DS22143C-page 41
MCP6566/6R/6U/7/9
NOTES:
DS22143C-page 42
2011 Microchip Technology Inc.
MCP6566/6R/6U/7/9
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
Device:
X
/XX
Temperature
Range
Package
–
Single Comparator (Tape and Reel)
(SC70, SOT-23)
MCP6566RT: Single Comparator (Tape and Reel)
(SOT-23 only)
MCP6566UT: Single Comparator (Tape and Reel)
(SOT-23 only)
MCP6567:
Dual Comparator
MCP6567T:
Dual Comparator (Tape and Reel)
MCP6569:
Quad Comparator
MCP6569T:
Quad Comparator (Tape and Reel)
Examples:
a)
MCP6566T-E/LT:
b)
MCP6566T-E/OT:
a)
MCP6566RT-E/OT: Tape and Reel
Extended Temperature,
5LD SOT-23 package.
a)
MCP6566UT-E/OT: Tape and Reel
Extended Temperature,
5LD SOT-23 package.
a)
MCP6567-E/MS:
b)
MCP6567-E/SN:
a)
MCP6569T-E/SL:
b)
MCP6569T-E/ST:
MCP6566T:
Temperature
Range:
E
= -40C to +125C
Package:
LT
OT
MS
SN
ST
SL
=
=
=
=
=
=
Plastic Small Outline Transistor (SC70), 5-lead
Plastic Small Outline Transistor (SOT-23), 5-lead
Plastic Micro Small Outline Transistor, 8-lead
Plastic Small Outline Transistor, 8-lead
Plastic Thin Shrink Small Outline Transistor, 14-lead
Plastic Small Outline Transistor, 14-lead
2011 Microchip Technology Inc.
Tape and Reel,
Extended Temperature,
5LD SC70 package.
Tape and Reel
Extended Temperature,
5LD SOT-23 package.
Extended Temperature
8LD MSOP package.
Extended Temperature
8LD SOIC package.
Tape and Reel
Extended Temperature
14LD SOIC package.
Tape and Reel
Extended Temperature
14LD TSSOP package.
DS22143C-page 43
MCP6566/6R/6U/7/9
NOTES:
DS22143C-page 44
2011 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2011, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-60932-892-4
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
2011 Microchip Technology Inc.
DS22143C-page 45
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-6578-300
Fax: 886-3-6578-370
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7830
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
08/04/10
DS22143C-page 46
2011 Microchip Technology Inc.