Order this document by 2N5555/D SEMICONDUCTOR TECHNICAL DATA N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Junction Temperature Range TJ – 65 to +150 °C Storage Temperature Range Tstg – 65 to +150 °C 1 2 3 CASE 29–04, STYLE 5 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)GSS 25 — Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS — 1.0 nAdc Drain Cutoff Current (VDS = 12 Vdc, VGS = – 10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = – 10 V, TA = 100°C) ID(off) — — 10 2.0 nAdc µAdc IDSS 15 — mAdc VGS(f) — 1.0 Vdc Drain–Source On–Voltage (ID = 7.0 mAdc, VGS = 0) VDS(on) — 1.5 Vdc Static Drain–Source On Resistance (ID = 0.1 mAdc, VGS = 0) rDS(on) — 150 Ohms rds(on) — 150 Ohms Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 5.0 pF Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) Crss — 1.2 pF (VDD = 10 Vdc, ID(on) ( ) = 7.0 mAdc, VGS(on) = 0, 0 VGS(off) = –10 10 Vdc) Vd ) (See (S Figure Fi 1) td(on) — 5.0 ns tr — 5.0 ns (VDD = 10 Vdc, ID(on) ( ) = 7.0 mAdc, VGS(on) = 0, 0 VGS(off) = –10 10 Vdc) Vd ) (See (S Figure Fi 1) td(off) — 15 ns tf — 10 ns Characteristic OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) ON CHARACTERISTICS Zero – Gate –Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Gate–Source Forward Voltage (IG(f) = 1.0 mAdc, VDS = 0) SMALL– SIGNAL CHARACTERISTICS Small–Signal Drain–Source “ON” Resistance (VGS = 0, ID = 0, f = 1.0 kHz) SWITCHING CHARACTERISTICS Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 2N5555 PULSE WIDTH 90% VDD TEKTRONIX 567 SAMPLING SCOPE 50 OHM COAXIAL CABLE 1.0 k 10 k PULSE GENERATOR (50 OHMS) INPUT 50% 10% INPUT PULSE RISE TIME 50 OHM COAXIAL CABLE 1.0 k VGS(on) 90% 50% 10% VGS(off) INPUT PULSE FALL TIME Rin = 50 OHMS 50 td(on) OUTPUT td(off) 10% INPUT PULSE RISE TIME < 1.0 ns FALL TIME < 1.0 ns NOMINAL VALUE OF “ON” PULSE WIDTH = 400 ns DUTY CYCLE ≤ 1.0% GENERATOR SOURCE IMPEDANCE = 50 OHMS 10% 90% 90% tr tf Figure 1. Switching Times Test Circuit POWER GAIN 24 f = 100 MHz PG , POWER GAIN (dB) 20 16 12 400 MHz Tchannel = 25°C VDS = 15 Vdc VGS = 0 V 8.0 4.0 2.0 0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14 Figure 2. Effects of Drain Current NEUTRALIZING COIL INPUT TO 50 Ω SOURCE C2 L1 C1 C4 C5 Rg′ Adjust VGS for ID = 50 mA VGS < 0 Volts *L2 *L3 TO 500 Ω LOAD L2 CASE L3 C6 C7 VGS *L1 C3 NOTE: COMMON VDS +15 V ID = 5.0 mA The noise source is a hot–cold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). 17 turns, (approx. — depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32″ ceramic coil form. Tuning provided by a powdered iron slug. 4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long, 3/8″ I.D. (AIR CORE). 3–1/2 turns, AWG #18 enameled copper wire, 1/4″ long, 3/8″ I.D. (AIR CORE). **L1 **L2 **L3 VALUE Reference Designation 100 MHz 400 MHz C1 7.0 pF 1.8 pF C2 1000 pF 17 pF C3 3.0 pF 1.0 pF C4 1–12 pF 0.8–8.0 pF C5 1–12 pF 0.8–8.0 pF C6 0.0015 µF 0.001 µF C7 0.0015 µF 0.001 µF L1 3.0 µH* 0.2 µH** L2 0.15 µH* 0.03 µH** L3 0.14 µH* 0.022 µH** 6 turns, (approx. — depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32″ ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8″ I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D. (AIR CORE). Figure 3. 100 MHz and 400 MHz Neutralized Test Circuit 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5555 NOISE FIGURE (Tchannel = 25°C) 10 6.5 ID = 5.0 mA VDS = 15 V VGS = 0 V 5.5 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 6.0 f = 400 MHz 4.0 2.0 4.5 f = 400 MHz 3.5 2.5 100 MHz 0 100 MHz 1.5 0 2.0 4.0 6.0 8.0 10 12 14 16 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 18 0 20 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 2.0 Figure 4. Effects of Drain–Source Voltage 12 14 Figure 5. Effects of Drain Current INTERMODULATION CHARACTERISTICS Pout , OUTPUT POWER PER TONE (dB) + 40 3RD ORDER INTERCEPT + 20 VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 0 – 20 – 40 – 60 – 80 – 100 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS – 120 – 140 – 160 – 120 – 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS – 80 – 60 – 40 – 20 Pin, INPUT POWER PER TONE (dB) 0 + 20 Figure 6. Third Order Intermodulation Distortion Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 2N5555 COMMON SOURCE CHARACTERISTICS 30 20 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C) bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 |bfs| @ IDSS |bfs| @ 0.25 IDSS 500 700 1000 5.0 bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 gos @ 0.25 IDSS 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 9. Forward Transadmittance (yfs) 4 50 70 100 200 300 f, FREQUENCY (MHz) 10 10 7.0 5.0 0.3 0.2 10 30 Figure 8. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 7. Input Admittance (yis) 20 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 10. Output Admittance (yos) Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5555 COMMON SOURCE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 1.0 40° 350° 100 340° 330° 320° 40° 310° 50° 20° 10° 330° 0.4 320° 310° ID = IDSS, 0.25 IDSS 300 0.8 900 500 ID = IDSS 60° 800 300° 400 60° 500 0.7 600 0.6 300° 0.1 500 70° 290° 400 700 800 700 800 290° 0.2 700 600 600 90° 340° 0.3 400 80° 350° 300 200 50° 70° 0° 200 100 0.9 30° ID = 0.25 IDSS 280° 80° 300 280° 0.0 200 900 270° 90° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 900 150° 160° 170° 180° 190° 200° 210° 150° 160° Figure 11. S11s 30° 20° 10° 0° 350° 170° 340° 330° 30° 20° 10° 80° 90° 700 110° 0.4 800 600 100° 210° 0° 350° 340° 330° 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 260° 100° 260° 250° 110° 250° 240° 120° 240° 230° 130° 230° 220° 140° 220° 320° 310° 300° 0.7 290° 900 700 600 200° 40° 0.5 60° 900 190° 320° 0.6 50° 800 180° Figure 12. S12s 40° 70° 270° 100 500 0.3 ID = 0.25 IDSS 500 0.3 100 400 400 280° 0.6 300 200 0.4 100 0.5 300 120° ID = IDSS 200 130° 0.6 140° 150° 160° 170° 180° 190° 200° 210° Figure 13. S21s Motorola Small–Signal Transistors, FETs and Diodes Device Data 150° 160° 170° 180° 190° 200° 210° Figure 14. S22s 5 2N5555 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25°C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS big @ 0.25 IDSS 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.5 0.3 brg @ IDSS 0.2 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 gog @ 0.25 IDSS 0.1 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 17. Forward Transfer Admittance (yfg) 6 30 Figure 16. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 15. Input Admittance (yig) 20 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 18. Output Admittance (yog) Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5555 COMMON GATE CHARACTERISTICS S–PARAMETERS (VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz) 30° 20° 10° 0° 350° 340° 330° 30° 0.7 40° 100 310° 50° 300° 60° 290° 70° 280° 80° 0° 350° 340° 330° 320° 0.04 200 300 0.03 400 100 500 200 0.5 ID = IDSS 0.4 310° 600 300 60° 70° 40° 10° ID = 0.25 IDSS 0.6 50° 320° 20° 0.02 700 400 500 300° 800 600 900 0.01 290° 700 80° 800 0.3 900 90° 270° 100° 260° 90° 250° 270° 500 600 100° ID = IDSS 110° 280° 0.0 100 110° 700 600 700 260° ID = 0.25 IDSS 250° 0.01 800 120° 240° 120° 240° 800 0.02 900 130° 230° 130° 230° 900 140° 220° 150° 160° 170° 180° 190° 200° 140° 210° 20° 10° 0° 350° 150° 160° 170° 340° 330° 30° 20° 10° 40° 320° 0° 1.5 1.0 100 100 0.4 50° 180° 190° 200° 210° 340° 330° Figure 20. S12g 0.5 40° 220° 0.04 Figure 19. S11g 30° 0.03 ID = IDSS 350° 300 200 500 320° 400 700 600 800 0.9 900 310° 50° 300° 60° 290° 70° 280° 80° 270° 90° 270° 100° 260° 100° 260° 110° 250° 110° 250° 120° 240° 120° 240° 130° 230° 130° 230° 140° 220° 140° 220° 100 ID = IDSS, 0.25 IDSS 0.3 0.8 60° 0.2 70° 310° ID = 0.25 IDSS 80° 0.1 300° 0.7 290° 280° 0.6 900 90° 900 150° 160° 170° 180° 190° 200° 210° Figure 21. S21g Motorola Small–Signal Transistors, FETs and Diodes Device Data 150° 160° 170° 180° 190° 200° 210° Figure 22. S22g 7 2N5555 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D X X G J H V C SECTION X–X 1 N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE Motorola reserves the right to make changes without further notice to any products herein. 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