2SK1528(L), 2SK1528(S) Silicon N-Channel MOS FET ADE-208-1291 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 1 2 3 3 D G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1528(L), 2SK1528(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 900 V Gate to source voltage VGSS ±30 V Drain current ID 4 A 10 A 4 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 60 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C 2 2SK1528(L), 2SK1528(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 900 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µA VDS = 720 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static Drain to source on state resistance RDS(on) — 3.0 4.0 Forward transfer admittance |yfs| 1.7 2.7 — S I D = 2 A, VDS = 20 V *1 Input capacitance Ciss — 740 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 305 — pF f = 1 MHz Reverse transfer capacitance Crss — 150 — pF Turn-on delay time t d(on) — 15 — ns I D = 2 A, VGS = 10 V, Rise time tr — 60 — ns RL = 15 Turn-off delay time t d(off) — 100 — ns Fall time tf — 80 — ns Body to drain diode forward voltage VDF — 0.9 — V I F = 4 A, VGS = 0 Body to drain diode reverse recovery time t rr — 800 — ns I F = 4 A, VGS = 0, diF/dt = 100 A/µs Note: I D = 2 A, VGS = 10 V *1 1. Pulse test See characteristic curves of 2SK1340. 3 2SK1528(L), 2SK1528(S) Power vs. Temperature Derating Maximum Safe Operation Area 50 20 20 ar ea 10 10 ) 2 1 (o n 5 PW S 40 10 O is per lim at ite ion d in by th R is D Drain Current ID (A) Channel Dissipation Pch (W) 60 D C = O 1 10 pe m tio n 0.5 0.2 (1 Sh ot (T C µs s s ra 0 m µs = ) 25 °C ) 0.1 Ta = 25°C 0.05 Normalized Transient Thermal Impedance γS (t) 0 4 50 100 Case Temperature TC (°C) 150 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C D=1 1.0 0.5 0.3 0.2 θch–c (t) = γS (t) · θch–c θch–c = 2.08°C/W, TC = 25°C 0.1 0.1 0.05 PDM 0.02 0.03 0.01 0.01 10 µ e uls P hot T 1S 100 µ 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 10 2SK1528(L), 2SK1528(S) Package Dimensions As of January, 2001 Unit: mm 2.54 ± 0.5 (1.4) 2.54 ± 0.5 11.3 ± 0.5 10.0 1.27 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 11.0 ± 0.5 1.2 ± 0.2 4.44 ± 0.2 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 10.2 ± 0.3 2.59 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) — — 1.4 g 5 2SK1528(L), 2SK1528(S) As of January, 2001 Unit: mm 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 3.0 +– 0.5 1.27 ± 0.2 1.2 ± 0.2 7.8 7.0 (1.5) 0.2 0.1 +– 0.1 2.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 6 1.7 7.8 6.6 1.3 ± 0.15 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 LDPAK (S)-(1) — — 1.3 g 2SK1528(L), 2SK1528(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 ± 0.2 0.3 10.0 +– 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.2 0.1 +– 0.1 2.2 1.2 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 5.0 +– 0.5 1.27 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) — — 1.35 g 7 2SK1528(L), 2SK1528(S) Cautions 1. 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