DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK3653 is suitable for converter of ECM. +0.1 0.3 ±0.05 0.13 –0.05 FEATURES • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) 0~0.05 G 0.8 ±0.1 1.2 ±0.1 • Compact package D S • Includes diode and high resistance at G - S 0.9 1.4 ±0.1 ORDERING INFORMATION MAX. 0.4 PART NUMBER PACKAGE 2SK3653 3pinXSOF (0814) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Note1 0.2 +0.1 –0 VDSX 20 V VGDO –20 V ID 10 mA IG 10 mA PT 80 mW Junction Temperature Tj 125 °C Storage Temperature Tstg –55 to +125 °C Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Note2 EQUIVALENT CIRCUIT Drain Gate Source Notes 1. VGS = –1.0 V 2 2. Mounted on ceramic substrate of 3.0 cm x 0.64 mm Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16293EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan © 2002 2SK3653 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Cut-off Current IDSS1 VDS = 2.0 V, VGS = 0 V Zero Gate Voltage Drain Cut-off Current IDSS2 VDS = 5.0 V, VGS = 0 V MIN. TYP. MAX. UNIT 38 570 µA 40 600 µA −1.0 V Gate Cut-off Voltage VGS(off) VDS = 5.0 V, ID = 1.0 µA −0.1 Forward Transfer Admittance | yfs1 | VDS = 5.0 V, ID = 30 µA, f = 1.0 kHz 350 µS Forward Transfer Admittance | yfs2 | VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz 350 µS Input Capacitance Ciss VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz 7.0 8.0 pF Noise Voltage NV See Test Circuit 1.8 3.0 µV IDSS RANK MARKING J2 J3 J4 J5 J6 J7 38 to 65 56 to 105 85 to 170 140 to 280 185 to 425 280 to 570 IDSS1 (µA) VDS = 2.0 V NOISE VOLTAGE TEST CIRCUIT +4.5 V R = 1 kΩ JIS A NV (r.m.s) C = 10 pF 2 Data Sheet D16293EJ1V0DS 2SK3653 TYPICAL CHARACTERISTICS (TA = 25°C) GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE 40 DERATING FACTOR OF POWER DISSIPATION IG - Gate Current - µA dT - Derating Factor - % 30 100 80 60 40 20 10 −1.0 −0.8 −0.6 −0.4 −0.2 −30 −40 0 0 20 40 60 80 100 120 140 160 VGS - Gate to Source Voltage - V TA - Ambient Temperature - ˚C INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 VDS = 0 V f = 1.0 MHz IDS IDSS = S = 2 30 0 µ =1 0 00 µ 0 µ A A A 0.8 CiSS - Input Capacitance - pF VDS = 5.0 V 0.6 S 0.4 IDS ID - Drain Current - mA 0.2 0.4 0.6 0.8 1.0 −20 20 1 0 −10 0.2 −0.6 −0.4 −0.2 0 50 20 10 5 2 1 1 +0.2 2 5 10 20 50 100 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V VGS (off) - Gate Cut-off Voltage - V |yfs| - Forward Transfer Admittance - µ S GATE CUT-OFF VOLTAGE AND FORWARD TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE DRAIN CURRENT CO-RELATION 10 VDS = 5.0 V 5 2 |yfs| 1 0.5 0.2 VGS (off) 0.1 0.05 0.02 0.01 10 20 50 100 200 500 1000 Zero-Gate Voltage Drain Current - µ A Data Sheet D16293EJ1V0DS 3 2SK3653 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J2 ID - Drain Current - µA 0.10 V 150 0.05 V 100 VGS = 0 V 50 −0.15 V −0.05 V −0.10 V 0 2 4 6 2 6 8 0.10 V 300 0.05 V ID - Drain Current - µA 400 −0.15 V 4 6 8 0.15 V VGS = 0 V 200 −0.05 V 100 0 2 10 −0.10 V 0 2 4 −0.15 V 6 8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J6 0.15 V 0.05 V 420 VGS = 0 V 280 −0.05 V −0.10 V −0.15 V 140 2 4 6 10 RANK: J7 900 0.10 V 560 10 RANK: J5 0.15 V 0.10 V 720 0.05 V 540 VGS = 0 V −0.05 V 360 −0.10 V 180 −0.15 V 8 10 0 0 VDS - Drain to Source Voltage - V 4 4 0.10 V −0.10 V ID - Drain Current - µA 0 500 −0.05 V 0 −0.15 V −0.05 V −0.10 V 0.15 V VGS = 0 V 700 VGS = 0 V 60 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.05 V 0 0.05 V 120 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 80 0 0.10 V 180 VDS - Drain to Source Voltage - V 240 160 240 0 10 0.15 V VDS - Drain to Source Voltage - V 320 0 8 RANK: J4 400 RANK: J3 300 200 0 ID - Drain Current - µA 0.15 V ID - Drain Current - µA ID - Drain Current - µA 250 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 2 4 6 8 VDS - Drain to Source Voltage - V Data Sheet D16293EJ1V0DS 10 2SK3653 [MEMO] Data Sheet D16293EJ1V0DS 5 2SK3653 • The information in this document is current as of June, 2002. 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