Previous Datasheet Index Next Data Sheet Bulletin I2107 40TPS.. SERIES PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 400A VR/ VD = 1200V Description/Features The 40TPS... new series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Major Ratings and Characteristics Characteristics 40TPS... Units 35 A 55 A 800 and 1200 V 400 A 1.45 V dv/dt 500 V/µs di/dt 150 A/µs - 40 to 125 °C IT(AV) Sinusoidal waveform IRMS V RRM/ V DRM ITSM VT TJ @ 40 A, TJ = 25°C 1 To Order TO-247AC 09-96 rev. 1.0 Previous Datasheet Index Next Data Sheet 40TPS.. Series Voltage Ratings Part Number VRRM/VDRM, max. repetitive peak and off-state voltage V VRSM , maximum non repetitive peak reverse voltage V I RRM/I DRM 125°C mA 40TPS08 800 900 5 40TPS12 1200 1300 Absolute Maximum Ratings Parameters 40TPS.. Units IT(AV) Max. Average On-state Current 35 A IT(RMS) Max. Continuous RMS 55 Conditions 50% duty cycle @ TC = 85° C, sinusoidal wave form On-state Current. As AC switch ITSM I2t I2√t A2s Max. Peak One Cycle Non-Repetitive 335 Surge Current 400 10ms Sine pulse, no voltage reapplied TJ = TJ max. Max. I 2t for fusing 560 10ms Sine pulse, rated VRRM applied 800 10ms Sine pulse, no voltage reapplied Max. I 2√t for fusing VT(TO)1Low level value of threshold 8000 A2√s 1.02 V 10ms Sine pulse, rated VRRM applied Initial t = 0.1 to 10ms, no voltage reapplied TJ = 125°C Voltage VT(TO)2High level value of threshold 1.23 Voltage rt1 Low level value of On-state 9.74 mΩ slope resistance rt2 High level value of On-state 7.50 slope resistance VTM Max. Peak On-state Voltage 1.85 V di/dt Max. rate of rise of turned-on Current 150 A/µs IH Max. holding Current 200 mA IL Max. latching Current 400 @ 110A, TJ = 25°C TJ = 25°C IRRM / Max. Reverse and Direct 0.5 TJ = 25°C IDRM 5.0 TJ = 125°C Leakage Current dv/dt Max. rate of rise of off-state Voltage 500 V/µs 2 To Order V R = rated VRRM/ VDRM TJ = 125°C 09-96 rev. 1.0 Previous Datasheet Index Next Data Sheet 40TPS.. Series Triggering Parameters Conditions 40TPS.. Units PGM Max. peak Gate Power 10 W PG(AV) Max. average Gate Power 2.5 IGM 2.5 A - VGM Max. peak negative Gate Voltage 10 V VGT Max. required DC Gate Voltage 4.0 TJ = - 40°C Anode supply = 6V to trigger 2.5 TJ = 25°C resistive load 1.7 TJ = 125°C IGT Max. peak Gate Current Max. required DC Gate Current 270 mA to trigger 150 TJ = 25°C 80 TJ = 125°C VGD Max. DC Gate Voltage not to trigger 0.25 V IGD Max. DC Gate Current not to trigger 6 mA 40TPS.. Units °C TJ = - 40°C TJ = 125°C, VDRM = rated value Thermal-Mechanical Specifications Parameters TJ Max. Junction Temperature Range - 40 to 150 Tstg Max. Storage Temperature Range - 40 to 150 RthJC Max. Thermal Resistance Junction 0.6 °C/W Conditions DC operation to Case RthJA Max. Thermal Resistance Junction 40 to Ambient RthCS Max. Thermal Resistance Case 0.2 Mounting surface, smooth and greased to Heatsink wt Approximate Weight T Mounting Torque Case Style 6 (0.21) g (oz.) Min. 6 (5) kg-cm Max. 12 (10) (lbf-in) (TO-247) 3 To Order 09-96 rev. 1.0 Previous Datasheet Index Next Data Sheet 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 40TPS.. Series 40TPS.. R (DC) = 0.6 K/W thJC 120 110 Conduction Angle 100 90 80 30° 60° 70 60 0 5 10 15 90° 20 120° 25 180° 30 35 40 130 40TPS.. R (DC) = 0.6 K/W 120 thJC 110 Conduction Period 100 90 80 30° 70 60 0 10 Average On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 60 50 RMS Limit 40 30 20 Conduction Angle 40TPS.. T = 125°C 10 0 J 0 5 10 15 20 25 30 35 40 90 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 300 250 200 150 40TPS.. Per Junction 1 10 40 50 60 70 60 50 40 RMS Limit 30 Conduction Period 20 40TPS.. T J = 125°C 10 0 0 10 20 30 40 50 60 Fig. 4 - On-state Power Loss Characteristics Initial T = 125°C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 350 DC Average On-state Current (A) At Any Rated Load Condition And With Rated V Applied Following Surge. RRM 30 180° DC 180° 120° 90° 60° 30° 80 Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 400 120° Fig. 2 - Current Rating Characteristics 180° 120° 90° 60° 30° 70 20 90° Average On-state Current (A) Fig. 1 - Current Rating Characteristics 80 60° 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated V Reapplied 350 RRM 300 250 200 40TPS.. Per Junction 150 0.01 0.1 1 10 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 4 To Order 09-96 rev. 1.0 Previous Datasheet Index Next Data Sheet 40TPS.. Series Instantaneous On-state Current (A) 1000 100 40TPS.. Per Junction 10 T = 25°C J T = 125°C 1 0.5 J 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 10 (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 20 V, 65 ohms tr = 1 µs, tp >= 6 µs TJ = 25 °C 1 VGD IGD 0.1 0.001 0.01 (a) TJ = -40 °C (b) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (4) (3) 40TPS.. 0.1 (2) (1) Frequency Limited by PG(AV) 1 10 100 1000 Instantaneous Gate Current (A) 1 Transient Thermal Impedance Z thJC (K/W) Fig. 8 - GateCharacteristics D = 0.50 D = 0.33 D = 0.25 0.1 Steady State Value (DC Operation) D = 0.17 D = 0.08 Single Pulse 40TPS.. 0.01 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics 5 To Order 09-96 rev. 1.0 Previous Datasheet Index Next Data Sheet 40TPS.. Series Outline Table 3. 65 (0 .14 4) 15.90 (0 .626 ) 3. 55 (0 .13 9) DIA. 15.30 (0 .602 ) 5. 30 (0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 5. 70 (0 .22 5) 5.30 ( 0.208) 20.30 (0 .800 ) 19.70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0 .177) 1 2 (2 PLCS.) 3 14. 80 ( 0.583) 4. 30 (0 .17 0) 14 .20 (0 .559 ) 3. 70 (0 .14 5) 2. 20 ( 0.08 7) 1. 40 (0 .05 6) 2. 40 (0 .09 5) M AX. MAX. 1. 00 (0 .03 9) 0.80 ( 0.032) 0. 40 (0 .213) 10. 94 ( 0.430) 10 .86 (0 .427 ) Dimensions in millimeters and inches Ordering Information Table Device Code 40 T P S 12 1 2 3 4 5 1 - Current Rating 2 - Circuit Configuration 2 (A) T = Thyristor 3 - 1 (K) (G) 3 Package T = TO-247 4 - Type of Silicon S = Standard Recovery Rectifier 5 - Voltage code: Code x 100 = VRRM 6 To Order 08 = 800V 12 = 1200V 09-96 rev. 1.0