Previous Datasheet Index Next Data Sheet Bulletin I2115 16TTS.. SERIES PHASE CONTROL SCR Description/Features The 16TTS.. new series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature. VT <1.4V @ 10A ITSM = 200A VR/ VD = 1200V Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Output Current in Typical Applications Applications Single-phase Bridge Capacitive input filter TA = 55°C,TJ = 125°C, 13.5 Three-phase Bridge Units 17 A common heatsink of 1°C/W Major Ratings and Characteristics Characteristics 16TTS..S Units 10 A 16 A 800 and 1200 V 200 A 1.4 V dv/dt 500 V/µs di/dt 150 A/µs - 40 to 125 °C IT(AV) Sinusoidal waveform IRMS VRRM/ VDRM ITSM VT TJ @ 10 A, TJ = 25°C TO-220AC Also available in SMD-220 package (series 16TTS..S) 1 To Order Previous Datasheet Index Next Data Sheet 16TTS.. Series Voltage Ratings VRRM, maximum VDRM , maximum IRRM/IDRM Part Number peak reverse voltage V peak direct voltage V 125°C mA 16TTS08 800 800 5 16TTS12 1200 1200 Absolute Maximum Ratings Parameters Conditions 16TTS.. Units IT(AV) Max. Average On-state Current 10 A IRMS Max. RMS On-state Current 16 ITSM Max. Peak One Cycle Non-Repetitive 170 10ms Sine pulse, rated VRRM applied Surge Current 200 10ms Sine pulse, no voltage reapplied Max. I2t for fusing 144 I2t A2s 200 I2√t Max. I2√t for fusing V TM rt 50% duty cycle @ TC = 98° C, sinusoidal wave form 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied 2000 A 2√s Max. On-state Voltage Drop 1.4 V On-state slope resistance 24.0 mΩ VT(TO) Threshold Voltage 1.1 V IRM/IDM Max.Reverse and Direct 0.5 mA Leakage Current 5.0 IH Max. Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial IT=1A IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load dv/dt Max. rate of rise of off-state Voltage 500 V/µs di/dt 150 A/µs Max. rate of rise of turned-on Current t = 0.1 to 10ms, no voltage reapplied @ 10A, TJ = 25°C T J = 125°C T J = 25 °C TJ = 125 °C 2 To Order VR = rated VRRM/ VDRM Previous Datasheet Index Next Data Sheet 16TTS.. Series Triggering Parameters Conditions 16TTS.. Units PGM Max. peak Gate Power 8.0 W PG(AV) Max. average Gate Power 2.0 + IGM Max. paek positive Gate Current 1.5 A - VGM Max. paek negative Gate Voltage 10 V IGT Max. required DC Gate Current 90 mA to trigger 60 Anode supply = 6V, resistive load, T J = 25°C 35 Anode supply = 6V, resistive load, TJ = 125°C VGT Anode supply = 6V, resistive load, TJ = - 65°C Max. required DC Gate Voltage 3.0 V to trigger 2.0 Anode supply = 6V, resistive load, T J = 25°C 1.0 Anode supply = 6V, resistive load, TJ = 125°C T J = 125°C, VDRM = rated value VGD Max. DC Gate Voltage not to trigger 0.2 IGD Max. DC Gate Current not to trigger 2.0 mA 16TTS.. Units 0.9 µs Anode supply = 6V, resistive load, TJ = - 65°C T J = 125°C, VDRM = rated value Switching Parameters tgt Typical turn-on time t rr Typical reverse recovery time tq Typical turn-off time Conditions TJ = 25°C 4 TJ = 125°C 110 Thermal-Mechanical Specifications Parameters 16TTS.. Units °C TJ Max. Junction Temperature Range - 40 to 125 T stg Max. Storage Temperature Range - 40 to 125 RthJC Max. Thermal Resistance Junction 1.3 to Case RthJA Max. Thermal Resistance Junction 62 °C/W Conditions DC operation to Ambient RthCS Typ. Thermal Resistance Case to Ambient wt Approximate Weight T Mounting Torque Case Style 0.5 Mounting surface, smooth and greased 2 (0.07) g (oz.) Min. 6 (5) Max. 12 (10) Kg-cm (Ibf-in) TO-220AC 3 To Order Previous Datasheet Index Next Data Sheet 125 120 Maximum Allowable Case Temperature (°C) 16TTS.. Series R t h J C (DC) = 1.3 K/W 115 C on d uction An g le 110 105 30° 100 60° 90° 95 90 120° 180° 0 2 4 6 8 10 12 16TTS.. Series R thJC (DC) = 1.3 K/W 120 115 Conduction Period 110 105 30° 100 90° 95 90 120° 0 2 6 8 10 12 DC 14 Fig. 2 - Current Rating Characteristics 180° 120° 90° 60° 30° RMS Limit 10 Conduction Angle 16TTS.. T = 125°C 5 J 0 2 4 6 8 10 12 25 20 15 10 RMS Limit Conduction Period 16TTS.. T J = 125°C 5 0 0 2 Peak Half Sine Wave Forward Current (A) Initial T = 125°C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 160 140 120 100 16TTS..Series 1 10 6 8 10 12 14 16 18 Fig. 4 - On-state Power Loss Characteristics At Any Rated Load Condition And With Rated V Applied Following Surge. RRM 4 Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 180 16 DC 180° 120° 90° 60° 30° Average On-state Current (A) Peak Half Sine Wave On-state Current (A) 4 180° Fig. 1 - Current Rating Characteristics 15 80 60° Average On-state Current (A) 20 0 125 Average On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Average On- state Power Loss (W) Maximum Allowable Case Temperature (°C) 16TTS.. Series 100 220 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. 200 Initial T = 125°C J No Voltage Reapplied Rated V Reapplied 180 RRM 160 140 120 100 80 16TTS.. Series 60 0.01 0.1 1 10 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 4 To Order Previous Datasheet Index Next Data Sheet 16TTS.. Series Instantaneous On-state Current (A) 1000 100 10 T = 25°C J T = 125°C J 16TTS.. Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (b) VGD IGD 0.1 0.001 (a) T J = -10 °C T J = 1 25 °C 1 T J = 25 °C Instantaneous Gate Voltage (V) 100 (4) (2) (1) Frequency Limited by PG(AV) 16TTS.. 0.01 (3) 0.1 1 10 10 0 Instantaneous Gate Current (A) Tran sient Thermal Impedance Z thJC (K/W) Fig. 8 - Gate Characteristics 10 1 D D D D D Steady State Value (DC Operation) = 0.50 = 0.33 = 0.25 = 0.17 = 0.08 0.1 Single Pulse 16TTS.. Series 0.0 1 0.0001 0.001 0.0 1 0.1 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics 5 To Order 1 Previous Datasheet Index Next Data Sheet 16TTS.. Series Outline Table 10.54 (0.41) 2 1.32 (0.05) MAX. 3.78 (0.15) 1.22 (0.05) DIA. 3.54 (0.14) 2.92 (0.11) 15.24 (0.60) 6.48 (0.25) 6.23 (0.24) 2.54 (0.10) TERM 2 14.84 (0.58) 2° 1 2 3 14.09 (0.55) 3.96 (0.16) 13.47 (0.53) 3.55 (0.14) 0.10 (0.004) 2.04 (0.080) MAX. 1.40 (0.05) 2.89 (0.11) 1.15 (0.04) 2.84 (0.10) 0.94 (0.04) 0.69 (0.03) 1 2 3 0.61 (0.02) MAX. 4.57 (0.18) 4.32 (0.17) Dimensions in millimeters (and inches) 5.08 (0.20) REF. Ordering Information Table Device Code 16 T T S 12 1 2 3 4 5 1 - Current Rating, RMS value 2 - Circuit Configuration 2 (A) 1 (K) (G) 3 T = Single Thyristor 3 - Package T = TO-220AC 4 - Type of Silicon S = Converter Grade 5 - Voltage code: Code x 100 = VRRM 08 = 800V 12 = 1200V 6 To Order