ETC PC-354N1T

PC354NT
PC354NT
Opaque*, Mini-flat Package,
AC Input Type Photocoupler
■ Features
■
1. AC inputs
2. Opaque type, mini-flat package
PC354NT (l-channel)
.3. Subminiature type
(The volume is smaller than that of our
conventional DIP type by as far as 30%.)
4. Isolation voltage between input and output
PC354NT” “ “v)., :3 750vrm.
* Employs double transfer mold technology
mne Dimensions
~,M~025
~. -
(Unit : mm)
Internal connection
diagram
a
@@
o@
~ Ancule/
Cathode
B Anode/
Cathcde
@ Emitter
@ Collector
9 Applica*ns
1. Hybrid substrates that require high density
mounting.
2. Programmable controllers
“In tie abce of confimatior by dence WIfiMtIon ~k, WARP tzkes m wnsibilti b any dkb hat mur In Squlpmnt using any of WRPS devices, *W In ca~lcgs,
dats Ms, etc. ~ntsct WAW In cfder to OMO he latest vemim of h *VICS wifI* Wfe beh using sny WAWS deviw.”
I
301
PC354NT
■ AHuta Maximum Rams
(Ta=25°C)
Parameter
Rating
Symbol
Unit
*50
Forward current
1P
mA
*I
Input “] Peak forward current
I [:11
A
Power dissipation
P
70
mtty
Collector -emitter voltage
VCE{)
35
L’
~
~,+n,,, Lmltter
-collector
voltage
Vsco
6
*
1
—
Collector current
Ic
50
mA
[
]
Collector
power
dissipation
]~–
150
mW
T o t a l po!ver dissipation
P,,,t
170
mW
* zIsolation voltage
v,.<)
3 750
b’,,,,.
ODeratinQ temperature
I
T,,,,,
1–30 to +100 I ‘c
Storage temperature
1–40 to +125
T,,~
“c
* 3 Soldering temperature
T<,,,
260
‘r
“uLpu,
–
*1 Pulse \vidth <100” #s, Dut}, ratio
*2 40 to 60%RH, AC for 1 minute
*3 For 10 senconds
Classification of
current transfer ratio (CrR
0,001
)
N C o n d i t i o n s : 1,:= } lMA, YLF 51’, ‘~a–?j’(;
■ Electro-oel Characteristics
Input
output
Transfer
charac
teristics
Parameter
Fonvard voltage
Terminal capacitance
Collector dark ~urrent
Collector -emitter breakdown voltage
Emitter -collector breakdown voltage
Current transfer ratio
Collector -emitter saturation voltage
Isolation resistance
Floating capacitance
Response time
302
1 Riw time
Fall time
(Ta = 25°C )
Symbol
~F
c!
ICE()
f3vcK()
BVE:LO
CTR
VCE,=, I
RISO
cl
t,
tf
Conditions
f20mA
V=O, f=lkHz
VCE = 20V, IF= O
Ic=O.lmA, IF=O
IE=1OPA, IF=()
IF= * lmA, VCE=5V
IF= +20mA, Ic= lmA
DC500V, 40 to 60%RH
V=O, f=lMHz
VCE=2V, Ic=2mA
R[. =1OOQ
IF=
MIN.
—
TYP.
1.2
30
—
35
6
20
5xlrl!~
—
—
0.1
1011
0.6
,4
3
hlAX.
1.4
25010 7
—
—
Unit
v
pF
A
I?
v
400
0.2
.
%
v
a
pF
#s
,uS
1.0
18
18
FC354NT
*.2 Diada Po-~va.
Ambiant Tamparatura
60
50
.40
\
30
20
\
10
,,
n
‘~ 30
0
25
50
7.5
100
‘~ 30
125
0
100
50
Ambient temperature T. (“(’)
Ambient temperature T, (“C)
Fi9.4Total Powar~m
Ambiant T~ra
300
250
J
L
150
200
170
150
1 oil
100
50
n
‘:30
\
o
2,5
50
75
100
50
,,
~ 30
125
()
Fig.5Paak Forward ~w. W Ratio
Fig. 6
100
Forward ~ va. F-ard Voltaga
w
o
Nty ratio
50
25
Ambierlt temperature T, (~)
Ambient temperature T:, (SC )
0.5
1.0
15
I
I
I
2.0
2.5
:30
I
3.5
Forward voltage VF (k’)
303
..
Collector dark current I CEO (A)
.
a
Relative currerlt transfer rati{j U~R (~)
Current transfer ratio C’~R (%)
3
II
I
\l
~
I
I
1
I
I
1
1
1
)
I
I
/
I
I
I
I
I
I
I
I
I
N
I
I
I
a
t?
Collector-emitter Sturatiotl voltage
VCE(%l) (v)
J
z
Collector current Ic (MA)
I
FC354NT
—
5.6
4.2
Input
-
2.8
14
0
Forward current IF (mA)
■ Temperature
Reflow
(1) One time soldering reflow is recommended
within the condition of temperature and
time profile shown below.
2WC
(2) When using another soldering method such
as infrared ray lamp, the temperature may
rise partially in the mold of the device.
Keep the temperature on the package of
the device within the condition of above
(l).
2WC
1 Wc
25C
—.
2 minutes
—
1 . 5 mtnutes
1 minute
. please refer to the chapter “Precautions for Use” .(Page 78 to 93)
305