Ordering number:EN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit:mm 2010C [2SA1011/2SC2344] JEDEC : TO-220AB EIAJ : TO-SC-46 ( ) : 2SA1011 Specifications 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Conditions Ratings Unit VCBO VCEO (–)180 V (–)160 V VEBO IC (–)6 V (–)1.5 A Collector Current (Pulse) ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25˚C (–)3 A 25 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 DC Current Gain Gain-Bandwidth Product hFE fT VCE=(–)5V, IC=(–)300mA VCE=(–)10V, IC=(–)50mA Output Capacitance Cob VCB=(–)10V, f=1MHz Base-to-Emitter Voltage VBE Collector-to-Emitter Saturation Voltage VCE(sat) Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time max Unit (–)10 µA (–)10 µA 60* 200* 100 MHz pF 23 pF VCE=(–)5V, IC=(–)10mA (–)1.5 V IC=(–)500mA, IB=(–)50mA (–0.5) V 0.3 V ton See specified Test Circuit tf See specified Test Circuit tstg See specified Test Circuit Fall Time typ (30) V(BR)CBO IC=(–)1mA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10mA, IC=0 Collector-to-Emitter Breakdown Voltage Ratings min (–)180 V (–)160 V (–)6 V (0.29) 0.15 (0.19) 0.48 (0.48) 0.81 µs µs µs * : The 2SA1011/2SC2344 are classified by 300mA hFE as follows : 60 D 120 100 E 200 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71598HA (KT)/30196TS APS 8-3288/D251MH/3207AT/2265MY, TS No.544-1/3 2SA1011/2SC2344 Switching Time Test Circuit (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) No.544-2/3 2SA1011/2SC2344 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice. PS No.544-3/3