SANYO FC12

Ordering number:EN3482
FC12
TR:NPN Epitaxial Plannar Silicon Transistor
FET:N-Channel Junction Silicon Transistor
High-Frequency Amp, AM Applications,
Low-Frequency Amp
Features
Package Dimensions
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC12 is formed with two chips, being equivalent
to the 2SC4639, placed in one package.
· Common drain and emitter.
unit:mm
2075
[FC12]
Electrical Connection
C:Collector
G:Gate
S:Source
E/D:Emitter/Drain
B:Base
SANYO:CP5
Switching Time Test Circuit
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
[FET]
Drain-to-Source Voltage
VDSX
VGDS
–15
V
Gate Current
IG
10
mA
Drain Current
ID
PD
50
mA
200
mW
VCBO
VCEO
55
V
50
V
VEBO
IC
6
150
mA
mA
Gate-to-Drain Voltage
Allowable Power Dissipation
15
V
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
V
ICP
300
Base Current
IB
30
mA
Collector Dissipation
PC
200
mW
Total Dissipation
PT
300
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
[Common Ratings]
Marking:12
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/5132MH, HK No.3482-1/5
FC12
Electrical Characterisitics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
[FET]
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
IGSS
VGS=–10V, VDS=0
Gate-to-Cutoff Current
Cutoff Voltage
VGS(off)
IDSS
Drain Current
Input Capacitance
Forward Transfer Admittance
| Yfs |
Ciss
Reverse Transfer Capacitance
Crss
Noise Figure
NF
VDS=5V, ID=100µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
–15
V
–1.0
–0.2
–0.6
6.0*
25
nA
–1.4
V
20.0*
mA
50
mS
10
pF
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
3.0
pF
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
1.5
dB
[TR]
Collector Cuttoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
C-E Saturation Voltage
VCE(sat)
VBE(sat)
B-E Saturation Voltage
C-B Breakdown Voltage
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
E-B Breakdown Voltage
Turn-ON Time
V(BR)EBO
ton
Storage Time
Fall Time
µA
0.1
µA
400
VCE=6V, IC=10mA
VCB=6V, f=1MHz
200
IC=50mA, IB=5mA
0.08
0.4
V
IC=50mA, IB=5mA
0.8
1.0
V
V(BR)CBO IC=10µA, IE=0
V(BR)CEO IC=1mA, RBE=∞
C-E Breakdown Voltage
135
0.1
IE=10µA, IC=0
MHz
1.7
pF
55
V
50
V
6
V
See specified Test Circuit
0.15
µs
tstg
See specified Test Circuit
0.75
µs
tf
See specified Test Circuit
0.20
µs
Note*:The FC12 is classified by IDSS as follows : (unit:mA).
6.0
F
12.0
10.0
G
20.0
Primany Characteristics of FET
No.3482-2/5
FC12
No.3482-3/5
FC12
Primany Characteristic of TR
No.3482-4/5
FC12
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3482-5/5