Ordering number:EN4983 FC18 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp, AM Amp, Low-Frequency Amp Applications Features Package Dimensions · Composed of 2 chips, one being equivalent to the 2SK2394 and the other the 2SC4639, in the convertional CP package, improving the mounting efficiency greatly. · Drain and emitter are shared. unit:mm 2122 [FC18] Electrical Connection 1:Collector 2:Gate 3:Source 4:Emitter/Drain 5:Base SANYO:XP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation VDSX VGDS IG 15 ID PD V –15 V 10 mA 50 mA 200 mW [TR] Collector-to-Base Voltage VCBO VCEO 55 V Collector-to-Emitter Voltage 50 V Emitter-to-Base Voltage VEBO 6 Collector Current Collector Current (Pulse) V IC 150 mA mA I CP 300 Base Current IB 30 mA Collector Dissipation PC 200 mW PT Tj 300 mW Junction Temperature 150 ˚C Storage Temperature Tstg –55 to +150 ˚C [Common Ratings] Total Dissipation · Marking:18 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42695MO(KOTO) BX-1576 No.4983-1/5 FC18 Continued from preceding page. Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit [FET] G-D Breakdown Voltage V(BR)GDS IG=–10µA, VDS=0 IGSS VGS=–10V, VDS=0 Gate Cutoff Current Cutoff Voltage VGS(off) IDSS Drain Current Forward Transfer Admittance | Yfs | Input Capacitance Ciss Reverse Transfer Capacitance Crss Noise Figure VDS=5V, ID=100µA VDS=5V, VGS=0 VDS=5V, VGS=0, f=1kHz VDS=5V, VGS=0, f=1MHz –15 –0.3 –0.7 6.0* 20 VDS=5V, VGS=0, f=1MHz VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz NF V –1.0 nA –1.5 V 32.0* mA 38 mS 10.0 pF 2.9 pF 1.0 dB [TR] Collector Cuttoff Current ICBO VCB=35V, IE=0 0.1 µA Emitter Cutoff Current IEBO hFE VEB=4V, IC=0 VCE=6V, IC=1mA 0.1 µA fT Co b VCE=6V, IC=10mA VCB=6V, f=1MHz 200 VCE(sat) VBE(sat) IC=50mA, IB=5mA IC=50mA, IB=5mA 0.08 0.4 0.8 1.0 DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE=∞ C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON Time V(BR)EBO ton Storage Time Fall Time IE=10µA, IC=0 135 400 MHz 1.7 pF V V 55 V 50 V 6 V See specified Test Circuit 0.15 µs tstg See specified Test Circuit 0.75 µs tf See specified Test Circuit 0.20 µs Note*:The FC18 is classified by IDSS as follows : (unit:mA) 6.0 F 120 10.0 G 20.0 16.0 H 32.0 Marking:18 IDSS rank:F, G, H The specifications shown above are for each individual FET or transistor. Switching Time Test CIrcuit No.4983-2/5 FC18 No.4983-3/5 FC18 No.4983-4/5 FC18 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4983-5/5