DISCRETE SEMICONDUCTORS DATA SHEET BF851A; BF851B; BF851C N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 14 Philips Semiconductors Product specification N-channel junction FETs BF851A; BF851B; BF851C FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. 1 handbook, halfpage 2 3 APPLICATIONS d g • Preamplifiers for AM tuners in car radios. s MAM042 DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT54 (TO-92) package. Fig.1 Simplified outline and symbol. PINNING - SOT54 (TO-92) PIN SYMBOL DESCRIPTION 1 g gate 2 s source 3 d drain CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 25 V BF851A 2 6.5 mA BF851B 6 15 mA VDS drain-source voltage (DC) IDSS drain current VGS = 0; VDS = 8 V BF851C 12 25 mA − 400 mW BF851A 12 20 mS BF851B 16 25 mS BF851C 20 30 mS Ptot total power dissipation up to Tamb = 40 °C yfs forward transfer admittance VGS = 0; VDS = 8 V Ciss input capacitance f = 1 MHz − 10 pF Crss reverse transfer capacitance f = 1 MHz − 3 pF 1995 Apr 14 2 Philips Semiconductors Product specification N-channel junction FETs BF851A; BF851B; BF851C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 25 V open drain − 25 V open source − 25 V − 10 mA − 400 mW storage temperature −65 +150 °C operating junction temperature − 150 °C VDS drain-source voltage (DC) VGSO gate-source voltage VDGO drain-gate voltage (DC) IG forward gate current (DC) Ptot total power dissipation Tstg Tj up to Tamb = 40 °C; note 1 Note 1. Device mounted on an epoxy printed-circuit board; maximum lead length 4 mm; mounting pad for the drain lead minimum 10 mm2. MBD478 600 Ptot (mW) 400 200 00 50 100 Tamb ( oC) 150 Fig.2 Power derating curve. 1995 Apr 14 3 Philips Semiconductors Product specification N-channel junction FETs BF851A; BF851B; BF851C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER VALUE UNIT 250 K/W thermal resistance from junction to ambient; note 1 Note 1. Device mounted on an epoxy printed-circuit board; maximum lead length 4 mm; mounting pad for the drain lead minimum 10 mm2. CHARACTERISTICS Tj = 25 °C; VDS = 8 V; VGS = 0; unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)GSS gate-source breakdown voltage IG = −1 µA VGSoff gate-source cut-off voltage TYP. MAX. UNIT −25 − − V BF851A −0.2 − −1 V BF851B −0.5 − −1.5 V BF851C −0.8 − −2 V − − 1 V BF851A 2 − 6.5 mA BF851B 6 − 15 mA BF851C 12 − 25 mA − − −1 nA 12 − 20 mS BF851B 16 − 25 mS BF851C 20 − 30 mS BF851A − − 200 µS BF851B − − 250 µS BF851C − − 300 µS VGSS gate-source forward voltage IDSS drain current IGSS gate cut-off current yfs forward transfer admittance ID = 1 µA VDS = 0; IG = 1 mA VGS = −20 V; VDS = 0 BF851A gos MIN. common source output conductance Ciss input capacitance f = 1 MHz − − 10 pF Crss reverse transfer capacitance f = 1 MHz − 2.4 3 pF Vn/√B equivalent input noise voltage VGS = 0; f = 1 MHz − 1.5 − nV/√Hz 1995 Apr 14 4 Philips Semiconductors Product specification N-channel junction FETs BF851A; BF851B; BF851C MBD461 30 MBD462 300 handbook, halfpage I DSS gos (µS) (mA) 20 200 10 100 0 0 0.5 1 0 1.5 2 V GSoff (V) 0 10 15 20 I DSS (mA) 25 VDS = 8 V. VGS = 0. VDS = 8 V. Fig.3 5 Drain current as a function of gate-source cut-off voltage; typical values. Fig.4 Common-source output conductance as a function of drain current; typical values. MBD463 30 MBD479 25 handbook, halfpage handbook, halfpage BF851C y fs (mS) y fs (mS) BF851B 20 20 BF851A 15 10 10 5 0 0 0 5 10 15 20 I DSS (mA) 0 25 VDS = 8 V. VGS = 0. Fig.5 5 10 15 I D (mA) 20 VDS = 8 V. Forward transfer admittance as a function of drain current; typical values. 1995 Apr 14 Fig.6 5 Forward transfer admittance as a function of drain current; typical values. Philips Semiconductors Product specification N-channel junction FETs BF851A; BF851B; BF851C MBD466 MBD465 5 5 handbook, halfpage handbook, halfpage ID (mA) ID (mA) 4 4 3 3 V GS = 0 V 100 mV 2 2 1 1 200 mV 300 mV 0 0 0.8 1 0.6 0.4 2 0 0.2 0 VGS (V) BF851A VDS = 8 V. 4 6 8 10 V DS (V) BF851A VDS = 8 V. Fig.7 Typical input characteristics. Fig.8 Typical output characteristics. MBD468 MBD467 10 10 handbook, halfpage handbook, halfpage ID (mA) ID (mA) 8 8 6 6 4 4 V GS = 0 V 100 mV 200 mV 300 mV 400 mV 2 2 500 mV 0 0 0.8 1 0.6 0.4 0 0.2 0 VGS (V) BF851B VDS = 8 V. 2 4 6 8 10 V DS (V) BF851B VDS = 8 V. Fig.9 Typical input characteristics. 1995 Apr 14 Fig.10 Typical output characteristics. 6 Philips Semiconductors Product specification N-channel junction FETs BF851A; BF851B; BF851C MBD470 MBD469 20 20 handbook, halfpage handbook, halfpage ID (mA) ID (mA) V GS = 0 V 16 16 200 mV 400 mV 12 12 600 mV 800 mV 8 8 1V 4 4 0 0 2.5 2 1.5 1 0 0.5 0 VGS (V) BF851C VDS = 8 V. 2 4 6 8 10 V DS (V) BF851C VDS = 8 V. Fig.11 Typical input characteristics. Fig.12 Typical output characteristics. MBD471 10 MBD472 2 10halfpage handbook, handbook, halfpage Cis ,C rs (pF) 8 I D = 10 mA IG 10 1 mA (nA) 0.1 mA 1 6 10 1 C is 10 2 4 I GSS 10 3 C rs 2 10 4 10 5 0 8 6 4 2 0 VGS (V) 0 5 10 15 20 25 VDG (V) VDS = 8 V. f = 1 MHz. VDS = 8 V. Fig.13 Input and reverse transfer capacitance as functions of gate-source voltage; typical values. 1995 Apr 14 Fig.14 Gate current as a function of drain-gate voltage; typical values. 7 Philips Semiconductors Product specification N-channel junction FETs BF851A; BF851B; BF851C MBD473 8 MBD474 10 2 handbook, halfpage Vn/ B (nV/ Hz) g is,b is (mS) 6 b is 10 4 g is 1 2 0 10 2 10 1 1 10 10 2 10 1 10 10 3 10 2 10 3 f (MHz) f (Hz) VDS = 8 V. VGS = 0. Tamb = 25 °C. VDS = 8 V. VGS = 0. Fig.15 Equivalent input noise as a function of frequency; typical values. Fig.16 Common-source input admittance; typical values. MBD475 10 2 handbook, halfpage MBD476 10 2 handbook, halfpage grs,b rs (mS) gfs ,b fs 10 (mS) b rs 1 10 b fs g rs 10 1 10 2 10 1 10 2 f (MHz) 10 3 10 VDS = 8 V. VGS = 0. Tamb = 25 °C. 10 2 f (MHz) 10 3 VDS = 8 V. VGS = 0. Tamb = 25 °C. Fig.17 Common-source reverse admittance; typical values. 1995 Apr 14 g fs Fig.18 Common-source forward transfer admittance; typical values. 8 Philips Semiconductors Product specification N-channel junction FETs BF851A; BF851B; BF851C MBD477 10 2 g os,bos (mS) 10 b os 1 g os 10 1 10 10 2 f (MHz) 10 3 VDS = 8 V. VGS = 0. Tamb = 25 °C. Fig.19 Common-source output admittance; typical values. 1995 Apr 14 9 Philips Semiconductors Product specification N-channel junction FETs BF851A; BF851B; BF851C PACKAGE OUTLINE handbook, full pagewidth 0.40 min 4.2 max 5.2 max 1.6 12.7 min 0.48 0.40 1 4.8 max 2.54 2 3 0.66 0.56 2.0 max (1) Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. Fig.20 SOT54 (TO-92). 1995 Apr 14 10 MBC014 - 1 Philips Semiconductors Product specification N-channel junction FETs BF851A; BF851B; BF851C DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Apr 14 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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