PHILIPS BF904

DISCRETE SEMICONDUCTORS
DATA SHEET
BF904; BF904R
N-channel dual gate MOS-FETs
Product specification
Supersedes data of 1997 Sep 05
1999 May 17
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
FEATURES
• Specially designed for use at 5 V supply voltage
• Short channel transistor with high transfer admittance to
input capacitance ratio
CAUTION
This product is supplied in anti-static packing to
prevent damage caused by electrostatic discharge
during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A
and SNW-FQ-302B.
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
PINNING
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143B and SOT143R package. The
transistor consists of an amplifier MOS-FET with source
4
SYMBOL
DESCRIPTION
1
s, b
2
d
drain
3
g2
gate 2
4
g1
gate 1
source
d
d
handbook, halfpage
PIN
handbook, halfpage
3
3
4
g2
g2
g1
g1
1
Top view
2
2
s,b
MAM124
1
Top view
s,b
MAM125 - 1
BF904R marking code: M06.
BF904 marking code: M04.
Fig.1 Simplified outline (SOT143B) and symbol.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
−
7
V
ID
drain current
−
−
30
mA
Ptot
total power dissipation
−
−
200
mW
Tj
operating junction temperature
−
−
150
°C
yfs
forward transfer admittance
22
25
30
mS
Cig1-s
input capacitance at gate 1
−
2.2
2.6
pF
Crs
reverse transfer capacitance
f = 1 MHz
−
25
35
fF
F
noise figure
f = 800 MHz
−
2
−
dB
1999 May 17
2
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
7
V
ID
drain current
−
30
mA
IG1
gate 1 current
−
±10
mA
IG2
gate 2 current
−
±10
mA
Ptot
total power dissipation
see Fig.3
BF904
Tamb ≤ 50 °C; note 1
−
200
mW
BF904R
Tamb ≤ 40 °C; note 1
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Note
1. Device mounted on a printed-circuit board.
MRA770
250
handbook, halfpage
P
tot
(mW)
200
BF904
150
BF904R
100
50
0
0
50
100
150
200
Tamb (o C)
Fig.3 Power derating curves.
1999 May 17
3
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
BF904
500
K/W
BF904R
550
K/W
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
note 2
BF904
Ts = 92 °C
290
K/W
BF904R
Ts = 78 °C
360
K/W
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S = VDS = 0; IG1-S = 10 mA
6
15
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S = VDS = 0; IG2-S = 10 mA
6
15
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S = VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S = VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S = 4 V; VDS = 5 V; ID = 20 µA
0.3
1
V
VG2-S(th)
gate 2-source threshold voltage
VG1-S = VDS = 5 V; ID = 20 µA
0.3
1.2
V
IDSX
drain-source current
VG2-S = 4 V; VDS = 5 V;
RG1 = 120 kΩ; note 1
8
13
mA
IG1-SS
gate 1 cut-off current
VG2-S = VDS = 0; VG1-S = 5 V
−
50
nA
IG2-SS
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = 5 V
−
50
nA
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.20.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj = 25 °C
22
25
30
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
−
2.2
2.6
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1
1.5
2
pF
Cos
drain-source capacitance
f = 1 MHz
1
1.3
1.6
pF
Crs
reverse transfer capacitance f = 1 MHz
−
25
35
fF
F
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt
−
1
1.5
dB
f = 800 MHz; GS = GSopt; BS = BSopt
−
2
2.8
dB
1999 May 17
4
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MRA769
MLD268
40
0
handbook,
gain halfpage
reduction
(dB)
10
Y fs
(mS)
30
20
20
30
40
10
50
0
50
0
50
100
0
150
o
T j ( C)
1
2
3
4
VAGC (V)
f = 50 MHz.
Fig.4
Transfer admittance as a function of the
junction temperature; typical values.
Fig.5
Typical gain reduction as a function of
the AGC voltage.
MRA771
120
MLD270
20
handbook, halfpage
Vunw
V G2 S = 4 V
ID
(dB µV)
3V
2.5 V
(mA)
110
15
100
10
2V
1.5 V
90
5
1V
80
0
10
20
30
0
40
50
gain reduction (dB)
0
0.4
0.8
1.2
2.0
1.6
V G1 S (V)
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ.
Fig.6
VDS = 5 V.
Tj = 25 °C.
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.20.
1999 May 17
Fig.7 Transfer characteristics; typical values.
5
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MLD269
MLD271
20
150
handbook, halfpage
handbook, halfpage
V G1 S = 1.4 V
ID
(mA)
16
V G2 S = 4 V
3.5 V
I G1
(µA)
1.3 V
3V
100
1.2 V
12
1.1 V
8
2.5 V
1.0 V
50
2V
0.9 V
4
0
0
0
2
4
6
8
10
V DS (V)
0
0.5
1.0
1.5
2.0
2.5
V G1 S (V)
VDS = 5 V.
Tj = 25 °C.
VG2-S = 4 V.
Tj = 25 °C.
Fig.9
Fig.8 Output characteristics; typical values.
Gate 1 current as a function of gate 1
voltage; typical values.
MLD273
MLD272
16
40
handbook, halfpage
handbook, halfpage
y fs
(mS)
ID
(mA)
V G2 S = 4 V
12
30
3.5 V
3V
20
8
2.5 V
4
10
2V
0
0
0
4
8
12
16
0
20
I D (mA)
10
20
30
40
50
I G1 (µA)
VDS = 5 V.
VDS = 5 V.
Tj = 25 °C.
VG2-S = 4 V.
Tj = 25 °C.
Fig.10 Forward transfer admittance as a
function of drain current; typical values.
1999 May 17
Fig.11 Drain current as a function of gate 1 current;
typical values.
6
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MLD274
MLD275
20
12
handbook, halfpage
handbook, halfpage
R G1 = 47 kΩ
ID
(mA)
ID
68 kΩ
82 kΩ
(mA)
15
100 kΩ
8
120 kΩ
150 kΩ
10
180 kΩ
220 kΩ
4
5
0
0
0
1
2
3
4
0
5
2
4
VGG (V)
VDS = 5 V; VG2-S = 4 V.
RG1 = 120 kΩ (connected to VGG); Tj = 25 °C.
6
V GG = V DS (V)
VG2-S = 4 V.
RG1 connected to VGG; Tj = 25 °C.
Fig.12 Drain current as a function of gate 1
supply voltage (= VGG); typical values;
see Fig.20.
Fig.13 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values; see Fig.20.
MLD276
12
MLB945
40
handbook, halfpage
handbook, halfpage
V GG = 5 V
4.5 V
ID
I G1
(µA)
4V
(mA)
V GG = 5 V
30
3.5 V
8
8
4.5 V
3V
4V
3.5 V
20
3V
4
10
0
0
2
4
V G2 S (V)
0
6
0
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG).
4
V G2 S (V)
6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG).
Fig.14 Drain current as a function of gate 2 voltage;
typical values; see Fig.20.
1999 May 17
2
Fig.15 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.20.
7
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
MLD277
10 2
handbook, halfpage
MLD278
10 3
y is
(mS)
10 3
ϕ rs
(deg)
y rs
(µS)
10 2
10
ϕ rs
10 2
y rs
b is
1
10
10
g is
10 1
10
102
f (MHz)
1
1
10 3
10
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.16 Input admittance as a function of frequency;
typical values.
MLD279
10 2
y fs
MLD280
10 2
10
handbook, halfpage
yos
(mS)
ϕ fs
y fs
(mS)
Fig.17 Reverse transfer admittance and phase as
a function of frequency; typical values.
(deg)
bos
1
ϕ fs
10
10
gos
10 1
10 2
10
1
1
10
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.18 Forward transfer admittance and phase as
a function of frequency; typical values.
1999 May 17
102
Fig.19 Output admittance as a function of
frequency; typical values.
8
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
VAGC
R1
10 k Ω
C1
4.7 nF
C2
R GEN
50 Ω
R2
50 Ω
C3
DUT
4.7 nF
12 pF
L1
≈ 450 nH
RL
50 Ω
C4
R G1
4.7 nF
VI
VGG
V DS
Fig.20 Cross-modulation test set-up.
1999 May 17
9
MLD171
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
Table 1
f
(MHz)
BF904; BF904R
Scattering parameters: VDS =5 V; VG2-S = 4 V; ID = 10 mA
S21
S11
MAGNITUDE
(ratio)
40
0.989
ANGLE
(deg)
S12
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
2.420
175.7
0.000
−3.4
S22
ANGLE
(deg)
79.9
MAGNITUDE
(ratio)
ANGLE
(deg)
0.993
−1.6
100
0.985
−8.3
2.414
169.1
0.001
78.3
0.992
−3.9
200
0.976
−16.4
2.368
158.8
0.003
80.3
0.987
−7.8
300
0.958
−24.1
2.301
148.5
0.004
73.7
0.980
−11.4
400
0.942
−32.0
2.251
138.8
0.005
70.7
0.974
−15.2
500
0.918
−39.3
2.170
129.5
0.005
67.2
0.966
−18.7
600
0.899
−46.0
2.080
120.7
0.005
67.8
0.958
−22.2
700
0.876
−52.6
2.001
112.1
0.005
68.6
0.951
−25.5
800
0.852
−58.8
1.924
103.2
0.005
72.9
0.944
−28.9
900
0.823
−64.9
1.829
94.7
0.005
78.7
0.937
−32.1
1000
0.800
−70.9
1.747
86.5
0.005
88.3
0.933
−35.2
1200
0.750
−82.4
1.621
70.7
0.005
120.5
0.928
−41.7
1400
0.719
−92.7
1.535
54.6
0.008
139.8
0.930
−48.4
1600
0.682
−102.5
1.424
39.4
0.010
137.8
0.924
−54.9
1800
0.642
−109.8
1.349
22.5
0.013
156.8
0.928
−62.9
2000
0.602
−116.5
1.283
1.1
0.018
175.1
0.928
−73.1
2200
0.547
−124.9
1.130
−15.1
0.014
172.6
0.887
−81.0
2400
0.596
−128.7
1.018
−49.1
0.040
−163.9
0.837
−95.8
2600
0.682
−132.6
0.979
−79.4
0.077
−164.0
0.778
−109.6
2800
0.771
−142.5
0.804
−116.2
0.120
178.8
0.629
−119.5
3000
0.793
−157.5
0.541
−153.5
0.149
158.3
0.479
−119.9
Table 2
Noise data: VDS = 5 V; VG2-S = 4 V; ID = 10 mA
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
800
2.00
0.686
49.6
1999 May 17
10
rn
50.40
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
1999 May 17
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-03-10
SOT143R
1999 May 17
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 17
13
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
NOTES
1999 May 17
14
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904; BF904R
NOTES
1999 May 17
15
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Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/00/05/pp16
Date of release: 1999 May 17
Document order number:
9397 750 05898