DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BF992 Silicon N-channel dual gate MOS-FET Product specification Supersedes data of 1996 Jul 30 1999 Aug 11 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET APPLICATIONS BF992 PINNING • VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. The device is also suitable for use in professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic micro-miniature SOT143B package with source and substrate interconnected. PIN SYMBOL DESCRIPTION 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 source d handbook, halfpage 4 3 The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. g2 g1 CAUTION 1 The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 2 s,b Top view MAM039 Marking code: M92. Fig.1 Simplified outline (SOT143B) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage (DC) − 20 V ID drain current (DC) − 40 mA Ptot total power dissipation Tamb = 60 °C − 200 mW Yfs forward transfer admittance f = 1 kHz; ID = 15 mA; VDS = 10 V; VG2-S = 4 V 25 − mS Cig1-s input capacitance at gate 1 f = 1 MHz; ID = 15 mA; VDS = 10 V; VG2-S = 4 V 4 − pF Crs reverse transfer capacitance f = 1 MHz; ID = 15 mA; VDS = 10 V; VG2-S = 4 V 30 − fF F noise figure GS = 2 mS; ID = 15 mA; VDS = 10 V; VG2-S = 4 V; f = 200 MHz 1.2 − dB Tj operating junction temperature − 150 °C 1999 Aug 11 2 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET BF992 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V ID drain current − 40 mA IG1 gate 1 current − ±10 mA IG2 gate 2 current − ±10 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Tamb ≤ 60 °C; see Fig.2; note 1 Note 1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. MBL033 handbook, halfpage 200 Ptot max (mW) 100 0 0 100 Tamb (o C) 200 Fig.2 Power derating curves. 1999 Aug 11 3 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET BF992 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air VALUE UNIT 460 K/W note 1 Note 1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ±V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-SS = ±10 mA 8 20 V ±V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-SS = ±10 mA 8 20 V −V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 10 V; ID = 20 µA 0.2 1.3 V −V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS = 10 V; ID = 20 µA 0.2 1.1 V ±IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = ±7 V − 25 nA ±IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = ±7 V − 25 nA DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C; VDS = 10 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance 20 25 − mS Cig1-s input capacitance at gate 1 f = 1 MHz − 4 − pF Cig2-s input capacitance at gate 2 f = 1 MHz − 1.7 − pF Cos output capacitance f = 1 MHz − 2 − pF Crs reverse transfer capacitance f = 1 MHz − 30 40 fF F noise figure f = 200 MHz; GS = 2 mS − 1.2 − dB 1999 Aug 11 4 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET MGE797 24 BF992 MGE799 30 handbook, halfpage I handbook, halfpage D (mA) 20 ID (mA) VG1-S = 0.2 V 0.1 V 16 4V3V VG2-S = 5 V 20 0V 12 2V 1V −0.1 V −0.2 V 8 10 −0.3 V 0V −0.4 V −0.5 V 4 −0.6 V 0 −1 0 0 2 4 6 8 10 VDS (V) 12 VG2-S = 4 V; Tj = 25 °C. 0 VG1-S (V) 1 VDS = 10 V; Tj = 25 °C. Fig.3 Output characteristics; typical values. Fig.4 Transfer characteristics; typical values. MGE798 30 MGE800 30 handbook, halfpage handbook, halfpage 5V 4V 3V |yfs| (mS) Yfs (mS) VG2-S = 5V 4V 2V 20 20 3V 10 10 2V 1V VG2-S = 0 V 1V 0 0 10 ID (mA) 0 −1 20 VDS = 10 V; Tj = 25 °C. Fig.5 VG1-S (V) 1 VDS = 10 V; Tj = 25 °C. Forward transfer admittance as a function of drain current; typical values. 1999 Aug 11 0V 0 Fig.6 5 Forward transfer admittance as a function of gate 1-source voltage; typical values. Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET BF992 MGE794 102 handbook, halfpage MGE793 10 handbook, halfpage yis (mS) yos (mS) bos 10 bis 1 1 gis gos 10−1 10−1 10−2 10 102 f (MHz) 10−2 103 10 102 VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. Fig.7 Fig.8 Input admittance as a function of frequency; typical values. MGE795 25 handbook, halfpage Output admittance as a function of frequency; typical values. MGE796 120 handbook, halfpage gfs Yfs (mS) 20 103 f (MHz) yrs (µS) 80 15 −brs 10 −bfs 40 5 grs 0 10 102 f (MHz) 0 103 10 102 103 f (MHz) VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C. Fig.9 Fig.10 Reverse transfer admittance as a function of frequency; typical values. Forward transfer admittance as a function of frequency; typical values. 1999 Aug 11 6 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET BF992 PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y HE v M A e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.9 0.1 0.48 0.38 0.88 0.78 0.15 0.09 3.0 2.8 1.4 1.2 1.9 1.7 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT143B 1999 Aug 11 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET BF992 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 11 8 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET NOTES 1999 Aug 11 9 BF992 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET NOTES 1999 Aug 11 10 BF992 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET NOTES 1999 Aug 11 11 BF992 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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