PHILIPS PMBFJ211

DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ210; PMBFJ211;
PMBFJ212
N-channel field-effect transistors
Product specification
File under Discrete Semiconductors, SC07
1997 Dec 01
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
FEATURES
PINNING - SOT23
• High speed switching
PIN
SYMBOL
DESCRIPTION
• Interchangeability of drain and source connections
1
s
source
• High impedance.
2
d
drain
3
g
gate
APPLICATIONS
• Analog switches
• Choppers, multiplexers and commutators
handbook, halfpage
• Audio amplifiers.
3
d
g
s
DESCRIPTION
1
N-channel symmetrical junction field-effect transistor in a
SOT23 package.
2
Top view
CAUTION
MAM385
Marking codes:
PMBFJ210: M68.
PMBFJ211: M69.
PMBFJ212: M70.
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
drain-source voltage
VGSoff
gate-source cut-off voltage
CONDITIONS
UNIT
−
±25
V
−1
−3
V
PMBFJ211
−2.5
−4.5
V
PMBFJ212
−4
−6
V
PMBFJ210
2
15
mA
PMBFJ211
7
20
mA
PMBFJ212
15
40
mA
−
250
mW
PMBFJ210
4
12
mS
PMBFJ211
6
12
mS
PMBFJ212
7
12
mS
drain current
VGS = 0; VDS = 15 V
Ptot
total power dissipation
Tamb ≤ 25 °C
yfs
common-source transfer admittance
VGS = 0; VDS = 15 V
1997 Dec 01
MAX.
ID = 1 nA; VDS = 15 V
PMBFJ210
IDSS
MIN.
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
±25
V
VGSO
gate-source voltage
open drain
−
−25
V
VDGO
drain-gate voltage
open source
−
−25
V
IG
forward gate current (DC)
−
10
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1; see Fig.13
−
250
mW
Tstg
storage temperature
−65
150
°C
Tj
operating junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1997 Dec 01
3
VALUE
UNIT
500
K/W
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
STATIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
V(BR)GSS
gate-source breakdown voltage
IG = −1 µA; VDS = 0
VGSoff
gate-source cut-off voltage
ID = 1 nA; VDS = 15 V
MAX.
UNIT
−
−25
V
PMBFJ210
−1
−3
V
PMBFJ211
−2.5
−4.5
V
−4
−6
V
−
1
V
PMBFJ10
2
15
mA
PMBFJ11
7
20
mA
PMBFJ12
15
40
mA
−
−100
pA
PMBFJ210
4
12
mS
PMBFJ211
6
12
mS
7
12
mS
PMBFJ210
−
150
µS
PMBFJ211
−
200
µS
PMBFJ212
−
200
µS
PMBFJ212
VGSS
gate-source forward voltage
IG = 0; VDS = 0
IDSS
drain current
VGS = 0; VDS = 15 V
IGSS
reverse gate leakage current
VGS = −15 V; VDS = 0
yfs
common-source transfer admittance
VGS = 0; VDS = 15 V
PMBFJ212
yos
MIN.
common source output admittance
VGS = 0; VDS = 15 V
DYNAMIC CHARACTERISTICS
Tamb = 25 °C.
SYMBOL
Cis
Cos
PARAMETER
input capacitance
output capacitance
Crs
feedback capacitance
gis
common source input conductance
gfs
common source transfer conductance
grs
common source feedback conductance
gos
Vn
common source output conductance
equivalent input noise voltage
1997 Dec 01
CONDITIONS
TYP.
UNIT
VDS = 15 V; VGS = −10 V; f = 1 MHz
2
pF
VDS = 15 V; VGS = 0; f = 1 MHz
4
pF
VDS = 15 V; VGS = −10 V; f = 1 MHz
0.8
pF
VDS = 15 V; VGS = 0; f = 1 MHz
2
pF
VDS = 15 V; VGS = −10 V; f = 1 MHz
0.8
pF
VDS = 15 V; VGS = 0; f = 1 MHz
0.9
pF
VDS = 15 V; VGS = 0; f = 100 MHz
70
µS
VDS = 15 V; VGS = 0; f = 450 MHz
1.1
mS
VDS = 15 V; VGS = 0; f = 100 MHz
7.5
mS
VDS = 15 V; VGS = 0; f = 450 MHz
7.5
mS
VDS = 15 V; VGS = 0; f = 100 MHz
−8
µS
VDS = 15 V; VGS = 0; f = 450 MHz
−90
µS
VDS = 15 V; VGS = 0; f = 100 MHz
95
µS
VDS = 15 V; VGS = 0; f = 450 MHz
200
µS
VDS = 15 V; VGS = 0; f = 1 kHz
5
nV/√Hz
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
MGM277
40
MGM278
12
handbook, halfpage
handbook, halfpage
IDSS
yfs
(mS)
(mA)
30
8
20
4
10
0
0
−2
0
−4 V
−6
GSoff (V)
−2
0
−4 V
−6
GSoff (V)
VDS = 15 V; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.3
Fig.2
Common-source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
Drain current as a function of gate-source
cut-off voltage; typical values.
MGM279
80
MGM280
8
handbook, halfpage
handbook, halfpage
gos
(µS)
ID
(mA)
VGS = 0 V
6
60
−200 mV
40
4
20
2
−400 mV
−600 mV
−800 mV
−1 V
−1.2 V
−1.4 V
0
0
−2
0
−4 V
−6
GSoff (V)
0
2
4
6
8
10
VDS (V)
VDS = 15 V; Tamb = 25 °C.
Fig.4
PMBFJ210.
Tj = 25 °C.
Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
1997 Dec 01
Fig.5 Output characteristics; typical values.
5
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
MGM281
8
MGM282
20
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
VGS = 0 V
16
6
−200 mV
−400 mV
12
−600 mV
4
−800 mV
−1 V
−1.2 V
−1.4 V
8
2
4
0
−2.5
−2
−1.5
−1
0
−0.5
0
VGS (V)
2
0
PMBFJ210.
VDS = 10 V; Tj = 25 °C.
4
6
8
10
VDS (V)
PMBFJ211.
Tj = 25 °C.
Fig.6 Input characteristics; typical values.
Fig.7 Output characteristics; typical values.
MGM283
20
MGM284
24
handbook, halfpage
handbook, halfpage
ID
(mA)
VGS = 0 V
ID
(mA)
16
−200 mV
−400 mV
−600 mV
−800 mV
−1 V
−1.2 V
−1.4 V
16
12
8
8
4
0
−6
−4
−2
0
VGS (V)
0
0
PMBFJ211.
VDS = 10 V; Tj = 25 °C.
4
6
8
10
VDS (V)
PMBFJ212.
Tj = 25 °C.
Fig.8 Input characteristics; typical values.
1997 Dec 01
2
Fig.9 Output characteristics; typical values.
6
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
MGM285
24
MGM286
2
handbook, halfpage
handbook, halfpage
ID
Crs
(pF)
(mA)
1.5
16
1
8
0.5
0
−6
−4
−2
VGS (V)
0
−10
0
−8
−6
−4
−2
0
VGS (V)
VDS = 15 V; f = 1 Mhz; Tamb = 25 °C.
PMBFJ212.
VDS = 10 V; Tj = 25 °C.
Fig.11 Feedback capacitance as a function of
gate-source voltage; typical values.
Fig.10 Input characteristics; typical values.
MGM287
5
MGM295
300
handbook, halfpage
handbook, halfpage
Cis
(pF)
Ptot
(mW)
4
200
3
2
100
1
0
−10
−8
−6
−4
−2
0
0
VGS (V)
0
50
100 T
150
amb (°C)
VDS = 15 V; f = 1 Mhz; Tamb = 25 °C.
Fig.12 Input capacitance as a function of
gate-source voltage; typical values.
1997 Dec 01
Fig.13 Power derating curve.
7
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
MGM289
103
handbook, halfpage
MGM288
−105
handbook, halfpage
ID
(µA)
IG
(pA)
102
−104
10
−103
1
−102
ID = 10 mA
1 mA
0.1 mA
10−1
−10
10−2
−1
10−3
−10−1
IGSS
0
4
8
12
16
20
VDG (V)
10−4
10−5
−4
−3
−2
−1 V
0
GS (V)
Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.14 Drain current as a function of gate-source
voltage; typical values.
1997 Dec 01
Fig.15 Gate current as a function of drain-gate
voltage; typical values.
8
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
MGM291
102
handbook, halfpage
MGM292
102
handbook, halfpage
yis
(mS)
yfs
(mS)
10
bis
1
10
gfs
gis
10−1
10−2
10
−bfs
102
f (MHz)
1
10
103
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.17 Common source transfer admittance as
a function of frequency; typical values.
MGM293
10
MGM294
10
handbook, halfpage
1
103
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.16 Common source input admittance as a
function of frequency; typical values.
yrs
(mS)
102
handbook, halfpage
yos
(mS)
−brs
bos
1
10−1
−grs
gos
10−1
10−2
10−3
10
102
f (MHz)
10−2
10
103
VDS = 15 V; VGS = 0; Tamb = 25 °C.
f (MHz)
103
VDS = 15 V; VGS = 0; Tamb = 25 °C.
Fig.18 Common source reverse admittance as
a function of frequency; typical values.
1997 Dec 01
102
Fig.19 Common source output admittance as
a function of frequency; typical values.
9
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1997 Dec 01
EUROPEAN
PROJECTION
10
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBFJ210; PMBFJ211; PMBFJ212
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Dec 01
11
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© Philips Electronics N.V. 1997
SCA56
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Printed in The Netherlands
117067/00/01/pp12
Date of release: 1997 Dec 01
Document order number:
9397 750 02788