DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION • High power gain Silicon NPN wideband transistor in a plastic SOT23 package. • Low noise figure 3 alfpage • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Satellite TV tuners and RF portable communications equipment up to 2 GHz. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector 1 2 Top view MSB003 Marking code: V2p. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter − − 20 V VCEO collector-emitter voltage open base − − 10 V IC collector current (DC) − − 50 mA mW Ptot total power dissipation Ts ≤ 97 °C; note 1 − − 300 hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 − fT transition frequency IC = 15 mA; VCE = 8 V − 8 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 8 V; f = 1 GHz − 14 − dB F noise figure IC = 5 mA; VCE = 8 V; f = 1 GHz − 1.3 − dB Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 50 mA Ptot total power dissipation − 300 mW Tstg storage temperature range −65 +150 °C Tj junction temperature − 175 °C Ts ≤ 97 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector tab. 1998 Aug 27 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point VALUE UNIT 260 K/W note 1 Note Ts is the temperature at the soldering point of the collector lead. 1. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current CONDITIONS IE = 0; VCB = 5 V MIN. TYP. MAX. − − 50 UNIT nA hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 − Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz − 0.7 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 1.3 − pF Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 15 mA; VCE = 8 V − 8 − GHz GUM maximum unilateral power gain (note 1) IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 14 − dB IC = 15 mA; VCE = 8 V; f = 2 GHz − 8 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 1.3 − dB Γs = Γopt; IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz − 1.7 − dB Γs = Γopt; IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 2.2 − dB IC = 5 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz; Zs = 60 Ω − 2.5 − dB Γs = Γopt; IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz − 2.7 − dB IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 2 GHz; Zs = 60 Ω − 3 − dB F noise figure Note 2 S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB . 2 2 1 – S 11 1 – S 22 1998 Aug 27 3 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 MRA614 400 MBB301 120 handbook, halfpage handbook, halfpage Ptot (mW) h FE 300 80 200 40 100 0 0 50 100 150 Ts (oC) 0 200 0 20 40 60 I C (mA) VCE = 5 V. Fig.3 DC current gain as a function of collector current, typical values. Fig.2 Power derating curve. MRA607 0.8 MBB303 10 handbook, halfpage handbook, halfpage fT (GHz) Cre (pF) 8 0.6 6 0.4 4 0.2 2 0 0 0 5 10 VCB (V) 15 0 30 40 VCE = 8 V; Tamb = 25 °C; f = 2 GHz. Feedback capacitance as a function of collector-base voltage, typical values. 1998 Aug 27 20 I C (mA) IC = ic = 0; f = 1 MHz. Fig.4 10 Fig.5 4 Transition frequency as a function of collector current, typical values. Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 MRA611 25 MRA610 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 20 40 GUM MSG Gmax 15 30 GUM MSG 10 20 5 10 0 0 10 20 Gmax 0 10 30 IC (mA) 102 VCE = 8 V; f = 1 GHz. VCE = 8 V; IC = 5 mA. Fig.6 Fig.7 Gain as a function of collector current, typical values. 103 f (MHz) 104 Gain as a function of frequency, typical values. MRA608 MRA609 50 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 40 40 GUM GUM 30 30 MSG MSG 20 20 Gmax 10 10 Gmax 0 10 10 2 103 f (MHz) 10 0 10 4 10 VCE = 8 V; IC = 15 mA. VCE = 8 V; IC = 30 mA. Fig.8 Fig.9 Gain as a function of frequency, typical values. 1998 Aug 27 5 2 103 f (MHz) 10 4 Gain as a function of frequency, typical values. Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 MBB308 4 MRA613 5 handbook, halfpage handbook, halfpage F f = 2 GHz F (dB) (dB) 4 3 1 GHz 900 MHz 3 ZS = 60 Ω 2 optimum source 500 MHz 2 1 1 0 0 1 10 1 100 I C (mA) 10 102 IC (mA) VCE = 8 V. VCE = 6 V; f = 900 MHz. Fig.10 Minimum noise figure as a function of collector current, typical values. Fig.11 Noise figure as a function of collector current, typical values. MBB309 4 MRA612 5 handbook, halfpage handbook, halfpage F F (dB) (dB) 4 I C = 30 mA IC = 0.5 mA 3 15 mA 3 1 mA 5 mA 2 mA 2 2 1 1 0 10 2 10 3 f (MHz) 0 102 10 4 103 f (MHz) 104 VCE = 8 V. VCE = 1 V. Fig.12 Minimum noise figure as a function of frequency, typical values. Fig.13 Minimum noise figure as a function of frequency, typical values. 1998 Aug 27 6 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 1 handbook, full pagewidth 0.5 2 0.2 5 3 GHz 10 +j 0.2 0 1 2 5 ∞ 10 −j 10 40 MHz 5 0.2 2 0.5 1 MBC968 VCE = 8 V; IC = 15 mA; Zo = 50 Ω. Fig.14 Common emitter input reflection coefficient (S11), typical values. 90° handbook, full pagewidth 120° 60° 150° 30° +ϕ 40 MHz 0.2 180° 3 GHz 0.1 0° −ϕ 30° 150° 60° 120° 90° MBC967 VCE = 8 V; IC = 15 mA. Fig.15 Common emitter forward transmission coefficient (S21), typical values. 1998 Aug 27 7 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 90° handbook, full pagewidth 120° 60° 3 GHz 30 o 150° 0.2 180° +ϕ 40 MHz 0.1 0° −ϕ 30° 150° 60° 120° MBC966 90° VCE = 8 V; IC = 15 mA. Fig.16 Common emitter reverse transmission coefficient (S12), typical values. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 −j 10 ∞ 40 MHz 3 GHz 10 5 0.2 2 0.5 1 MBC965 VCE = 8 V; IC = 15 mA; Zo = 50 Ω. Fig.17 Common emitter output reflection coefficient (S22), typical values. 1998 Aug 27 8 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1998 Aug 27 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Aug 27 10 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 NOTES 1998 Aug 27 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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