DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PINNING SOT23 FEATURES • Small size PIN • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector DESCRIPTION • Gold metallization ensures excellent reliability. APPLICATIONS 3 handbook, halfpage • Communication and instrumentation systems. DESCRIPTION 1 Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. 2 Top view MSB003 Marking code: LBp Fig.1 Simplified outline (SOT23). QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz MIN. − TYP. 0.3 MAX. − UNIT pF fT transition frequency IC = 15 mA; VCE = 6 V; fm = 1 GHz 7 9 − GHz GUM maximum unilateral power gain IC = 15 mA; VCE = 6 V; Tamb = 25 °C; f = 1 GHz − 16 − dB NF noise figure ΓS = Γopt; IC = 5 mA; VCE = 6 V; f = 1 GHz − 1.5 2.5 dB Ptot total power dissipation Ts = 60 °C; note 1 Rth j-s thermal resistance from junction to soldering point Note 1. Ts is the temperature at the soldering point of the collector pin. 2001 Jan 18 2 − − 360 mW − − 320 K/W Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 1.5 V IC collector current (DC) − 50 mA IC(AV) average collector current − 50 mA Ptot total power dissipation − 360 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Ts = 60 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s 2001 Jan 18 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 320 K/W Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V(BR)CBO collector-base breakdown voltage IC = 100 µA; IE = 0 20 − − V V(BR)CEO collector-emitter breakdown voltage IC = 100 µA; IB = 0 10 − − V V(BR)EBO emitter-base breakdown voltage IE = 10 µA; IC = 0 1.5 − − V VBEF forward base-emitter voltage IE = 25 mA − − 1.05 V ICBO collector-base leakage current VCB = 10 V; IE = 0 − − 100 nA IEBO emitter-base leakage current VEB = 1 V; IC = 0 − − 100 nA hFE DC current gain IC = 5 mA; VCE = 6 V 100 150 200 IC = 15 mA; VCE = 6 V − 150 − 0.3 − pF AC characteristics Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − fT transition frequency IC = 15 mA; VCE = 6 V; fm = 1 GHz 7 9 − GHz |s21|2 insertion gain IC = 15 mA; VCE = 6 V; f = 1 GHz 13 15 − dB GUM maximum unilateral power gain; note 1 IC = 15 mA; VCE = 6 V; Tamb = 25 °C; f = 1 GHz − 16 − dB IC = 15 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz − 10 − dB ΓS = Γopt; IC = 5 mA; VCE = 6 V; f = 1 GHz − 1.5 2.5 dB ΓS = Γopt; IC = 5 mA; VCE = 6 V; f = 2 GHz − 2.1 − dB NF noise figure Note s 21 2 - dB 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 ) 2001 Jan 18 4 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B MDA871 400 MCD974 160 handbook, halfpage handbook, halfpage Ptot (mW) hFE 300 120 200 70 100 40 0 0 50 100 150 Ts (°C) 0 200 0 10 20 30 40 50 IC (mA) VCE = 6 V. Fig.2 Power derating as a function of soldering point temperature. Fig.3 MGS498 DC current gain as a function of collector current; typical values. MCD975 10 0.5 handbook, halfpage handbook, halfpage fT (GHz) Cre (pF) 0.4 8 0.3 6 0.2 4 0.1 2 0 0 0 4 8 VCB (V) 0 12 10 20 I C = Ic = 0; f = 1 MHz. VCE = 6 V; fm = 1 GHz; Tamb = 25 °C. Fig.4 Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. 2001 Jan 18 5 30 40 50 IC (mA) Transition frequency as a function of collector current; typical values. Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B MGS500 gain (dB) handbook, halfpage MSG gain (dB) Gmax 40 16 MGS501 50 20 handbook, halfpage GUM 12 30 8 20 4 10 GUM MSG Gmax 0 102 0 0 10 20 30 I C (mA) 40 103 f = 1 GHz; VCE = 6 V. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain. I C = 5 mA; VCE = 6 V. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain. Fig.6 Fig.7 Gain as a function of collector current; typical values. MGR502 50 f (MHz) Gain as a function of frequency; typical values. MGS503 50 handbook, halfpage handbook, halfpage gain (dB) gain (dB) 40 104 40 GUM 30 30 MSG MSG GUM 20 20 Gmax Gmax 10 10 0 102 103 f (MHz) 0 102 104 103 I C = 15 mA; VCE = 6 V. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain. I C = 30 mA; VCE = 6 V. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain. Fig.8 Fig.9 Gain as a function of frequency; typical values. 2001 Jan 18 6 f (MHz) 104 Gain as a function of frequency; typical values. Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B MGS504 4 MGS505 4 handbook, halfpage handbook, halfpage NF (dB) NF (dB) (1) 3 3 (2) (1) 2 (2) (3) 2 (3) 1 0 10−1 (4) (5) (6) 1 1 10 IC (mA) 0 102 102 VCE = 6 V. f (MHz) 104 VCE = 6 V. (1) f = 2 GHz. (4) f = 900 MHz. (1) IC = 30 mA. (2) f = 1.5 GHz. (5) f = 800 MHz. (2) IC = 15 mA. (3) f = 1 GHz. (6) f = 500 MHz. (3) IC = 5 mA. Fig.10 Minimum noise figure as a function of collector current; typical values. 2001 Jan 18 103 Fig.11 Minimum noise figure as a function of frequency; typical values. 7 Philips Semiconductors Preliminary specification UHF wideband transistor handbook, full pagewidth PBR941B unstable region source unstable region load 90° 1.0 +1 135° 45° +2 + 0.5 0.8 0.6 + 0.2 0.4 +5 Γopt 0.2 (1) 180° 0.5 0 1 2 (4) 0° 0 (5) (3) f = 1 GHz; VCE = 6 V; I C = 5 mA; Zo = 50 Ω. 5 (2) (6) − 0.2 −5 (1) G = 17 dB. (2) G = 16 dB. (3) G = 15 dB. − 0.5 −135° (4) NF = 1.6 dB. −2 (5) NF = 1.8 dB. − 45° −1 (6) NF = 2 dB. 1.0 − 90° MGS506 Fig.12 Common emitter available gain, noise and stability circles; typical values. handbook, full pagewidth unstable region load 90° unstable region source 1.0 +1 135° 45° +2 + 0.5 0.8 0.6 + 0.2 0.4 +5 Γopt (1) 180° 0 0.5 1 0.2 2 5 0° (5) 0.2 0 (6) (7) (2) f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω. (3) (1) Gmax = 10.9 dB. (4) (2) G = 10 dB. (3) G = 9 dB. (4) G = 8 dB. (5) NF = 2.1 dB. −5 − 0.2 −135° − 0.5 −2 − 45° −1 1.0 (6) NF = 2.3 dB. (7) NF = 2.5 dB. − 90° MGS507 Fig.13 Common emitter available gain, noise and stability circles; typical values. 2001 Jan 18 8 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B 90° handbook, full pagewidth 1.0 +1 135° 45° +2 + 0.5 0.8 0.6 + 0.2 0.4 +5 0.2 3 GHz 180° 0.2 0 0.5 1 2 GHz 2 5 0° 0 1 GHz 100 MHz 500 MHz − 0.2 −5 200 MHz −135° − 0.5 −2 − 45° −1 1.0 − 90° VCE = 6 V; IC = 15 mA; Zo = 50 Ω. MGS508 Fig.14 Common emitter input reflection coefficient (s 11); typical values. 90° handbook, full pagewidth 135° 45° 200 MHz 500 MHz 1 GHz 2 GHz 3 GHz 100 MHz 180° 50 40 30 20 0° 10 −135° − 45° − 90° MGS509 VCE = 6 V; IC = 15 mA. Fig.15 Common emitter forward transmission coefficient (s21); typical values. 2001 Jan 18 9 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B 90° handbook, full pagewidth 135° 45° 3 GHz 2 GHz 180° 0.5 0.4 0.3 0.2 1 GHz 500 MHz 200 MHz 100 MHz 0.1 0° −135° − 45° − 90° MGS510 VCE = 6 V; IC = 15 mA. Fig.16 Common emitter reverse transmission coefficient (s12); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 + 0.5 0.6 + 0.2 0.4 +5 0.2 180° 0.2 0 0.5 1 5 0° 0 1 GHz 500 MHz 2 GHz 100 MHz 3 GHz 200 MHz − 5 − 0.2 −135° 2 − 0.5 −2 − 45° −1 1.0 − 90° MGS511 VCE = 6 V; IC = 15 mA; Zo = 50 Ω. Fig.17 Common emitter output reflection coefficient (s22); typical values. 2001 Jan 18 10 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2001 Jan 18 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 11 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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