PHILIPS PRF947

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
PRF947
UHF wideband transistor
Product specification
Supersedes data of 1999 Mar 01
1999 Jul 23
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
FEATURES
PINNING
• Small size
PIN
• Low noise
1
base
• Low distortion
2
emitter
• High gain
3
collector
DESCRIPTION
• Gold metallization ensures excellent reliability.
APPLICATIONS
3
handbook, halfpage
• Communication and instrumentation systems.
3
1
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT323
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
2
1
2
Top view
MAM062
Marking code: V0.
Fig.1 Simplified outline (SOT323) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 15 mA; VCE = 6 V; fm = 1 GHz
−
8.5
−
GHz
GUM
maximum unilateral power gain
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
16
−
dB
NF
noise figure
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
−
1.5
−
dB
Ptot
total power dissipation
Ts = 60 °C; note 1
−
−
250
mW
Rth j-s
thermal resistance from junction
to soldering point
Ptot = 250 mW
−
−
460
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
1999 Jul 23
2
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
1.5
V
IC
DC collector current
−
50
mA
IC(AV)
average collector current
−
50
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point
CONDITIONS
Ptot = 250 mW; Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
1999 Jul 23
3
VALUE
UNIT
460
K/W
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics
V(BR)CBO
collector-base breakdown voltage
IC = 100 µA; IE = 0
20
−
−
V
V(BR)CEO
collector-emitter breakdown
voltage
IC = 100 µA; IB = 0
10
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 10 µA; IC = 0
1.5
−
−
V
ICBO
collector-base leakage current
VCB = 10 V; IE = 0
−
−
100
nA
IEBO
emitter-base leakage current
VEB = 1 V; IC = 0
−
−
100
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
50
100
200
IC = 15 mA; VCE = 6 V
−
100
−
AC characteristics
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
−
0.3
−
pF
fT
transition frequency
IC = 15 mA; VCE = 6 V; fm = 1 GHz
−
8.5
−
GHz
|s21|2
insertion gain
IC = 15 mA; VCE = 6 V; f = 1 GHz
−
14.5
−
dB
GUM
maximum unilateral power gain;
note 1
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 1 GHz
−
16
−
dB
IC = 15 mA; VCE = 6 V;
Tamb = 25 °C; f = 2 GHz
−
10
−
dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
−
1.5
−
dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz
−
2.1
−
dB
NF
noise figure
Note
s 21 2
dB
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------( 1 – s 11 2 ) ( 1 – s 22 2 )
1999 Jul 23
4
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
MGS496
MGS497
120
400
handbook, halfpage
handbook, halfpage
Ptot
(mW)
hFE
300
80
200
40
100
0
0
0
50
100
150
Ts (°C)
0
200
10
20
30
40
50
IC (mA)
VCE = 6 V.
Fig.2
Power derating as a function of soldering
point temperature.
Fig.3
DC current gain as a function of collector
current; typical values.
MGS498
MGS499
0.5
10
handbook, halfpage
handbook, halfpage
Cre
fT
(GHz)
(pF)
0.4
8
0.3
6
0.2
4
0.1
2
0
0
4
8
VCB (V)
0
12
0
10
20
IC = Ic = 0; f = 1 MHz.
VCE = 6 V; fm = 1 GHz; Tamb = 25 °C.
Fig.4
Fig.5
Feedback capacitance as a function of
collector-base voltage; typical values.
1999 Jul 23
5
30
I C (mA)
40
Transition frequency as a function of
collector current; typical values.
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
MGS500
gain
(dB)
handbook, halfpage
MSG
gain
(dB)
Gmax
40
16
MGS501
50
20
handbook, halfpage
GUM
12
30
8
20
4
10
GUM
MSG
Gmax
0
102
0
0
10
20
30
I C (mA)
40
103
f = 1 GHz; VCE = 6 V.
IC = 5 mA; VCE = 6 V.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
MGR502
50
f (MHz)
104
Gain as a function of frequency; typical
values.
MGS503
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
40
GUM
30
30
MSG
MSG
GUM
20
20
Gmax
Gmax
10
10
0
102
103
f (MHz)
0
102
104
IC = 15 mA; VCE = 6 V.
IC = 30 mA; VCE = 6 V.
Fig.8
Fig.9
Gain as a function of frequency; typical
values.
1999 Jul 23
6
103
f (MHz)
104
Gain as a function of frequency; typical
values.
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
MGS504
4
MGS505
4
handbook, halfpage
handbook, halfpage
NF
(dB)
NF
(dB)
(1)
3
3
(2)
(1)
2
(2)
(3)
2
(3)
1
0
10−1
VCE = 6 V.
(1) f = 2 GHz
(2) f = 1.5 GHz
(3) f = 1 GHz
(4)
(5)
(6)
1
1
10
IC (mA)
0
102
102
f (MHz)
104
VCE = 6 V.
(1) IC = 30 mA
(2) IC = 15 mA
(3) IC = 5 mA.
(4) f = 900 MHz
(5) f = 800 MHz
(6) f = 500 MHz.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
1999 Jul 23
103
Fig.11 Minimum noise figure as a function of
frequency; typical values.
7
Philips Semiconductors
Product specification
UHF wideband transistor
handbook, full pagewidth
PRF947
unstable region
source
unstable
region load
90°
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
Γopt
0.2
(1)
180°
0.5
0
1
2 (4)
0°
(2)
(6)
−0.2
−5
−0.5
−135°
0
(5)
(3)
f = 1 GHz; VCE = 6 V; IC = 5 mA;
Zo = 50 Ω.
(1) G = 17 dB
(2) G = 16 dB
(3) G = 15 dB
(4) NF = 1.6 dB
(5) NF = 1.8 dB
(6) NF = 2 dB.
5
−2
− 45°
−1
1.0
− 90°
MGS506
Fig.12 Common emitter available gain, noise and stability circles; typical values.
handbook, full pagewidth
unstable
region load
90°
unstable region
source
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
Γopt
(1)
180°
0
0.5
1
0.2
2
5
0°
(5)
0.2
0
(6)
f = 2 GHz; VCE = 6 V; IC = 5 mA;
Zo = 50 Ω.
(1) Gmax = 10.9 dB
(2) G = 10 dB
(3) G = 9 dB
(4) G = 8 dB
(5) NF = 2.1 dB
(6) NF = 2.3 dB
(7) NF = 2.5 dB.
−0.2
(7)
(2)
−5
(3)
(4)
−135°
−0.5
−2
− 45°
−1
1.0
− 90°
MGS507
Fig.13 Common emitter available gain, noise and stability circles; typical values.
1999 Jul 23
8
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
APPLICATION INFORMATION
SEQUENCE No.
SPICE parameters for the PRF947 die.
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
39(2)
1999 Jul 23
PARAMETER
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
Cbpb
VALUE
0.466
150.4
1.000
53.06
180.0
57.30
2.000
27.68
1.000
1.976
9.943
1.420
1.000
12.14
0.000
4.957
0.597
1.988
0.000
1.110
3.000
0.568
600.0
0.412
2.037
30.90
3.148
131.8
0.000
205.8
296.2
0.118
0.104
0.000
0.000
700.0
0.000
0.943
83.00
PARAMETER
40(2)
Cbpe
AF
KF
41
42
UNIT
fA
−
−
V
mA
fA
−
−
−
V
mA
aA
−
Ω
µA
Ω
Ω
Ω
−
eV
−
pF
mV
−
ps
−
V
mA
deg
fF
mV
−
−
ps
F
mV
−
−
fF
VALUE
UNIT
84.00
1.000
4 x 10−16
fF
−
−
Notes
1. These parameters have not been extracted, the
default values are shown.
2. Cbpb, Cbpe: base-bondpad and emitter-bondpad
capacitance to collector.
C cb
handbook, halfpage
L1
LB
B
L2
B'
C'
E'
C be
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50;
QLB(f) = QLB√(f/fc);
QLE(f) = QLE√(f/fc);
fc = corner frequency = 1 GHz.
Fig.14 Package equivalent circuit SOT323.
List of components (see Fig.14)
DESIGNATION
9
VALUE
UNIT
Cbe
2
fF
Ccb
100
fF
Cce
100
fF
L1
0.34
nH
L2
0.10
nH
L3
0.34
nH
LB
0.60
nH
LE
0.60
nH
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
90°
handbook, full pagewidth
1.0
+1
135°
45°
+2
+0.5
0.8
0.6
+0.2
0.4
+5
0.2
3 GHz
180°
0.2
0
0.5
1
2 GHz
2
5
0°
0
1 GHz
100 MHz
500 MHz
−0.2
−5
200 MHz
−135°
−0.5
−2
− 45°
−1
1.0
− 90°
MGS508
VCE = 6 V; IC = 15 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (s11); typical values.
90°
handbook, full pagewidth
135°
45°
200 MHz
500 MHz
1 GHz
2 GHz
3 GHz
100 MHz
180°
50
40
30
20
0°
10
−135°
− 45°
− 90°
MGS509
VCE = 6 V; IC = 15 mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
1999 Jul 23
10
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
90°
handbook, full pagewidth
135°
45°
3 GHz
2 GHz
180°
0.5
0.4
0.3
0.2
1 GHz
500 MHz
200 MHz
100 MHz
0.1
0°
−135°
− 45°
− 90°
MGS510
VCE = 6 V; IC = 15 mA.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
90°
handbook, full pagewidth
1.0
+1
135°
0.8
45°
+2
+0.5
0.6
+0.2
0.4
+5
0.2
180°
0.2
0
0.5
1
5
0°
0
1 GHz
500 MHz
2 GHz
100 MHz
3 GHz
200 MHz − 5
−0.2
−135°
2
−0.5
−2
− 45°
−1
1.0
− 90°
MGS511
VCE = 6 V; IC = 15 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
1999 Jul 23
11
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 Jul 23
REFERENCES
IEC
JEDEC
EIAJ
SC-70
12
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jul 23
13
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
NOTES
1999 Jul 23
14
Philips Semiconductors
Product specification
UHF wideband transistor
PRF947
NOTES
1999 Jul 23
15
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© Philips Electronics N.V. 1999
SCA 67
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Printed in The Netherlands
125006/03/pp16
Date of release: 1999
Jul 23
Document order number:
9397 750 06131