EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A !External dimensions (Units : mm) (1) 1.25 2.0 1.3 (3 ) (2) (4) (5 ) (6) 0.2 0.65 EMB3, UMB3N 0.65 !Features 1) Two DTA143T chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 0.1Min. !Structure Dual PNP digital transistor (each with single built in resistor) 0.9 0to0.1 0.7 0.15 2.1 Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 !Equivalent circuit (1) (2) (3) (4) (5) 0.3 (6) IMB3A The following characteristics apply to both DTr1 and DTr2. 0.95 0.95 1.9 2.9 Abbreviated symbol: B3 1.6 (6) DTr1 DTr2 0.3to0.6 DTr1 Each lead has same dimensions DTr2 (4) R1 (5) (6) (3) R1=4.7kΩ R1 (2) ROHM : SMT6 EIAJ : SC-74 (1) R1=4.7kΩ !Packaging specifications Package Type Taping Code T2R TN T110 Basic ordering unit (pieces) 8000 3000 3000 − − EMB3 UMB3N − IMB3N − − − !Absolute maximum ratings (Ta = 25°C) Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V −100 mA Parameter IC Collector current Collector power dissipation EMB3,UMB3N PC IMB3A 150 (TOTAL) mW 300 (TOTAL) Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 0.8 0.15 (4) (5) R1 (1) 0to0.1 (3) (2) R1 IMB3A 1.1 2.8 EMB3, UMB3N ∗1 ∗2 Abbreviated symbol: B3 EMB3 / UMB3N / IMB3A Transistors !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −50 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −5 − − V IE=−50µA Collector cutoff current ICBO − − −0.5 µA VCB=−50V Emitter cutoff current IEBO − − −0.5 µA VEB=−4V Parameter Conditions VCE (sat) − − −0.3 V IC/IB=−5mA/−2.5mA hFE 100 250 600 − VCE=−5V, IC=−1mA Transition frequency fT − 250 − MHz Input resistance R1 3.29 4.7 6.11 kΩ Collector-emitter saturation voltage DC current transfer ratio VCE=10mA, IE=−5mA, f=100MHz − ∗ Transition frequency of the device 1k VCE=−5V DC CURRENT GAIN : hFE 500 50 −1 −500m −200m 200 100 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) !Electrical characteristic curves −100m Ta=100°C 25°C −40°C 20 10 5 2 1 −100µ −200µ −500µ −1m −2m lC/lB=20 Ta=100°C 25°C −40°C −5m −10m −20m −50m −100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current ∗