NDA-320-D 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers GENERAL PURPOSE AMPLIFIERS 4 Product Description The NDA-320-D Casacadable Broadband GaInP/GaAs MMIC amplifier is a low-cost, high-performance solution for high frequency RF, microwave, or optical amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NDA-320-D provides flexibility and stability. In addition, the NDA-320-D chip was designed with an additional ground via, providing improved thermal resistance performance. The NDA-series of distributed amplifiers provide design flexibility by incorporating AGC functionality into their designs. Optimum Technology Matching® Applied Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS !GaInP/HBT Package Style: Die Features GaN HEMT • Reliable, Low-Cost HBT Design • 10.0dB Gain at 6GHz • High P1dB of +13.5dBm @ 2GHz • Fixed Gain or AGC Operation • 50Ω I/O Matched for High Freq. Use Ordering Information NDA-320-D Functional Block Diagram Rev A0 020115 GaInP/GaAs HBT MMIC Distributed Amplifier DC to 12GHz - Die Only RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-407 NDA-320-D Absolute Maximum Ratings Parameter GENERAL PURPOSE AMPLIFIERS 4 RF Input Power Power Dissipation Device Current, ICC1 Device Current, ICC2 Junction Temperature, Tj Operating Temperature Storage Temperature Rating Unit +20 300 42 48 200 -45 to +85 -65 to +150 dBm mW mA mA °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Exceeding any one or a combination of these limits may cause permanent damage. Parameter Specification Min. Typ. Max. Unit Overall Small Signal Power Gain, S21 8.5 6.0 Gain Flatness Input and Output VSWR Bandwidth, BW Output Power @ 1dB Compression Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VZ AGC Control Voltage, VC1 Gain Temperature Coefficient, δGT/δT 3.6 9.5 10.5 7.0 +0.6 1.45:1 1.95:1 12.5 dB dB dB dB GHz 13.5 13.5 10.0 5.5 23.5 -14 4.0 4.7 -0.0015 dBm dBm dBm dB dBm dB V V dB/°C 4.2 Condition VCC1 =+10V, VCC2 =+10V, VC1 =+4.75V, VC2 =+2.98V, ICC1 =24mA, ICC2 =40mA, Z0 =50Ω, TA =+25°C f=0.1GHz to 4.0GHz f=4.0GHz to 8.0GHz f=8.0GHz to 12.0GHz f=0.1GHz to 8.0GHz f=0.1GHz to 8.0GHz f=8.0GHz to 12.0GHz BW3 (3dB) f=2.0GHz f=6.0GHz f=14.0GHz f=2.0GHz f=2.0GHz f=0.1GHz to 12.0GHz MTTF versus Junction Temperature Case Temperature Junction Temperature MTTF 85 113.9 >1,000,000 °C °C hours 124 °C/W Thermal Resistance θJC Thermal Resistance, at any temperature (in °C/Watt) can be estimated by the following equation: θJC (°C/Watt)=124[TJ(°C)/113] Suggested Voltage Supply: VCC1 >4.7V, VCC2 >5.0V 4-408 Rev A0 020115 NDA-320-D Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. ICC1 VCC2 VCC1 D1, Blocking Diode RCC1 C1 1 uF RCC2 ICC2 VC1 4 VC2 In GENERAL PURPOSE AMPLIFIERS Out Q1 Q2 Simplified Schematic of Distributed Amplifier Bias Resistor Selection RCC1: For 4.7V<VCC1 <5.0V RCC1 =0Ω For 5.0V<VCC1 <10.0V RCC1 =VCC1 -4.7/0.024Ω RCC2: For 5.0V<VCC2 <10.0V RCC1 =VCC2 -2.98/0.040Ω Typical Bias Parameters for VCC1 =VCC2 =10V: VCC1 (V) 10 VCC2 (V) 10 ICC1 (mA) 24 VC1 (V) 4.75 RCC1 (Ω) 220 ICC2 (mA) 40 VC2 (V) 3.98 RCC2 (Ω) 150 Application Notes Die Attach The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. Wire Bonding Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. Assembly Procedure Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMI from Ablestik. Bonding Temperature (Wedge or Ball) It is recommended that the heater block temperature be set to 160°C±10°C. Rev A0 020115 4-409 NDA-320-D Chip Outline Drawing - NDA-320-D Chip Dimensions: 0.027” x 0.022” x 0.004” GENERAL PURPOSE AMPLIFIERS 4 4-410 Rev A0 020115 NDA-320-D P1dB versus Frequency at 25°C POUT/Gain versus PIN at 2 GHz 20.0 20.0 15.0 10.0 10.0 4 5.0 5.0 0.0 Pout (dBm) Gain (dB) 0.0 -5.0 1.0 3.0 5.0 7.0 9.0 11.0 13.0 -15.0 15.0 -10.0 -5.0 Frequency (GHz) 0.0 5.0 10.0 PIN (dBm) Third Order Intercept versus Frequency at 25°C POUT/Gain versus PIN at 6 GHz 20.0 40.0 35.0 15.0 Output IP3 (dBm) POUT (dBm), Gain (dB) 30.0 10.0 5.0 25.0 20.0 15.0 10.0 0.0 Pout (dBm) 5.0 Gain (dB) -5.0 0.0 -15.0 -10.0 -5.0 0.0 5.0 10.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 Frequency (GHz) PIN (dBm) Gain (S21) for AGC Mode Operation 11.0 10 mA 25 mA 10.0 50 mA 9.0 S21 (dBm) 8.0 7.0 6.0 5.0 4.0 3.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Frequency (GHz) Rev A0 020115 4-411 GENERAL PURPOSE AMPLIFIERS POUT (dBm), Gain (dB) P1dB (dBm) 15.0 NDA-320-D Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB S11 versus Frequency 0.0 0.0 -2.0 -5.0 -4.0 -6.0 -10.0 S12 (dB) S11 (dB) -8.0 -15.0 -10.0 -12.0 -14.0 -20.0 -16.0 -18.0 -25.0 -20.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0.0 2.0 4.0 Frequency (GHz) 6.0 8.0 10.0 12.0 14.0 10.0 12.0 14.0 Frequency (GHz) S21 versus Frequency S22 versus Frequency 14.0 0.0 12.0 -5.0 10.0 -10.0 8.0 S22 (dB) S21 (dB) GENERAL PURPOSE AMPLIFIERS 4 S12 versus Frequency 6.0 -15.0 -20.0 4.0 -25.0 2.0 0.0 -30.0 0.0 2.0 4.0 6.0 8.0 Frequency (GHz) 4-412 10.0 12.0 14.0 0.0 2.0 4.0 6.0 8.0 Frequency (GHz) Rev A0 020115