NLAS4501 Analog Switch The NLAS4501 is an analog switch manufactured in sub–micron silicon–gate CMOS technology. It achieves very low RON while maintaining extremely low power dissipation. The device is a bilateral switch suitable for switching either analog or digital signals, which may vary from zero to full supply voltage. The NLAS4501 is pin–for–pin compatible with the MAX4501. The NLAS4501 can be used as a direct replacement for the MAX4501 in all 2.0 V to 5.5 V applications where a RON performance improvement is required. The Enable pin is compatible with standard CMOS outputs when supply voltage is nominal 5.0 Volts. It is also over–voltage tolerant, making it a very useful logic level translator. http://onsemi.com MARKING DIAGRAMS SC–88A / SOT–353/SC–70 DF SUFFIX CASE 419A • Guaranteed RON of 32 at 5.5 V • Low Power Dissipation: ICC = 2 A • Provides Voltage translation for many different voltage levels • • V9d Pin 1 d = Date Code 3.3 to 5.0 Volts, Enable pin may go as high as +5.5 Volts 1.8 to 3.3 Volts 1.8 to 2.5 Volts Improved version of MAX4501 (at any voltage between 2 and 5.5 Volts) Chip Complexity: FETs 11 TSOP–5/SOT–23/SC–59 DT SUFFIX CASE 483 V9d Pin 1 d = Date Code PIN ASSIGNMENT COM 1 NO 2 GND 3 5 4 V+ 1 COM 2 NO 3 GND 4 ENABLE 5 VCC FUNCTION TABLE ENABLE Figure 1. Pinout (Top View) On/Off Enable Input State of Analog Switch L H Off On ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev. 1 1 Publication Order Number: NLAS4501/D NLAS4501 MAXIMUM RATINGS (Note 1) Symbol Parameter Value Unit VCC Positive DC Supply Voltage 0.5 to 7.0 V VIN Digital Input Voltage (Enable) 0.5 to 7.0 V VIS Analog Output Voltage (VNO or VCOM) 0.5 to VCC 0.5 V IIK DC Current, Into or Out of Any Pin TSTG Storage Temperature Range TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature under Bias JA Thermal Resistance PD Power Dissipation in Still Air at 85C MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 100 N/A V ILatch–Up Latch–Up Performance Above VCC and Below GND at 85C (Note 5) 300 mA 20 mA 65 to 150 C 260 C 150 C SC–88 TSOP–5 112 148 C/W SC–88 TSOP–5 500 450 mW Level 1 Oxygen Index: 30% – 35% UL–94–VO (0.125 in) 1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum–rated conditions is not implied. 2. Tested to EIA/JESD22–A114–A. 3. Tested to EIA/JESD22–A115–A. 4. Tested to JESD22–C101–A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit 2.0 5.5 V VCC Positive DC Supply Voltage VIN Digital Input Voltage (Enable) GND 5.5 V VIO Static or Dynamic Voltage Across an Off Switch GND VCC V VIS Analog Input Voltage (NO, COM) GND VCC V TA Operating Temperature Range, All Package Types –55 +125 °C tr, tf Input Rise or Fall Time, (Enable Input) 0 0 100 20 ns/V Vcc = 3.3 V + 0.3 V Vcc = 5.0 V + 0.5 V 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80 ° C 117.8 419,300 TJ = 90 ° C 1,032,200 90 TJ = 100 ° C 80 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Time, Years TJ = 120° C Time, Hours TJ = 130 ° C Junction Temperature C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 TIME, YEARS 100 1000 Figure 2. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NLAS4501 DC CHARACTERISTICS – Digital Section (Voltages Referenced to GND) Guaranteed Max Limit Symbol Parameter VIH Condition VCC –55 to 25C <85C <125C Unit Minimum High–Level Input Voltage, Enable Inputs 2.0 3.0 4.5 5.5 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 1.5 2.1 3.15 3.85 V VIL Maximum Low–Level Input Voltage, Enable Inputs 2.0 3.0 4.5 5.5 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 0.5 0.9 1.35 1.65 V IIN Maximum Input Leakage Current, Enable Inputs VIN = 5.5 V or GND 0 V to 5.5 V +0.1 +1.0 +1.0 µA ICC Maximum Quiescent Supply Current (per package) Enable and VIS = VCC or GND 5.5 1.0 1.0 2.0 µA DC ELECTRICAL CHARACTERISTICS – Analog Section Guaranteed Max Limit Symbol Parameter Condition VCC –55 to 25C <85C <125C Unit RON Maximum ON Resistance (Figures 8 – 12) VIN = VIH VIS = VCC to GND IIsI = <10.0mA 3.0 4.5 5.5 45 30 25 50 35 30 55 40 35 RFLAT(ON) ON Resistance Flatness VIN = VIH IIsI = <10.0mA VIS = 1V, 2V, 3.5V 4.5 4 4 5 INO(OFF) NO Off Leakage Current (Figure 3) VIN = VIL VNO = 1.0 V or 4.5 V VCOM = 4.5 V or 1.0 V 5.5 1 10 100 nA ICOM(OFF) COM Off Leakage Current (Figure 3) VIN = VIL VNO = 4.5 V or 1.0 V VCOM = 1.0 V or 4.5 V 5.5 1 10 100 nA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Max Limit VCC Symbol Parameter Test Conditions (V) –55 to 25C Min <85C Typ Max Min Typ <125C Max Min Typ Max Unit tON Turn–On Time RL = 300 CL = 35 pF (Figures 4, 5, and 13) 2.0 3.0 4.5 5.5 7.0 5.0 4.5 4.5 14 10 9 9 16 12 11 11 16 12 11 11 ns tOFF Turn–Off Time RL = 300 CL = 35 pF (Figures 4, 5, and 13) 2.0 3.0 4.5 5.5 11.0 7.0 5.0 5.0 22 14 10 10 24 16 12 12 24 16 12 12 ns Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM(OFF) CCOM(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8 10 10 20 http://onsemi.com 3 pF NLAS4501 ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Parameter Condition VCC Limit V 25°C Unit BW On–Channel Maximum On Channel –3dB 3dB Bandwidth or Minimum Frequency Response Res onse VIS = 0 dBm VIS centered between VCC and GND (Figures 6 and 14) 3.0 4.5 5.5 190 200 220 MHz VONL Maximum Feedthrough On Loss VIS = 0 dBm @ 10 kHz VIS centered between VCC and GND (Figure 6) 3.0 4.5 5.5 –2 2 –2 2 –2 dB VISO Off–Channel Off Channel Isolation kHz; VIS = 1 V RMS f = 100 kHz VIS centered between VCC and GND (Figures 6 and 15) 3.0 4.5 5.5 –93 93 dB Q Charge Injection Enable In Input ut to Common I/O VIS = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 , CL = 1000 pF Q = CL * ∆VOUT (Figures 7 and 16) 3.0 5.5 1.5 3.0 pC C Total Harmonic Distortion THD + Noise FIS = 20 Hz to 1 MHz, RL = Rgen = 600 , CL = 50 pF F VIS = 3.0 VPP sine wave VIS = 5.0 VPP sine wave (Figure (Fi 17) 3.3 5.5 0.3 0.15 1.00E+05 1.00E+04 1.00E+03 1.00E+02 LEAKAGE (pA) THD 1.00E+01 1.00E+00 ICOM(ON) 1.00E–01 1.00E–02 1.00E–03 ICOM(OFF) 1.00E–04 1.00E–05 1.00E–06 INO(OFF) 1.00E–07 –55 –35 –15 5 25 45 65 85 105 125 145 TEMPERATURE (°C) Figure 3. Switch Leakage vs. Temperature http://onsemi.com 4 % NLAS4501 VCC DUT VCC Input NO 50% 50% 0V COM VOUT 0.1 F 300 Ω VOH 35 pF 90% 90% Output VOL Input tON tOFF Figure 4. tON/tOFF VCC VCC Input DUT 300 Ω NO 50% 50% 0V COM VOUT VOH 35 pF Output Input tOFF Figure 5. tON/tOFF http://onsemi.com 5 10% 10% VOL tON NLAS4501 DUT Reference Transmitted COM NO 50 Ω Generator 50 Ω Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VVOUT for VIN at 100 kHz IN VOUT for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL Figure 6. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT NO VCC VIN COM GND CL Output Off VIN Figure 7. Charge Injection: (Q) http://onsemi.com 6 On Off ∆VOUT NLAS4501 80 80 70 70 60 VCC = 2.0 50 50 RON (Ω) RON (Ω) 60 40 VCC = 2.5 30 –55°C 30 25°C VCC = 3.0 20 40 20 85°C VCC = 4.5 10 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 125°C 0 5 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VCOM (VOLTS) VIS (VOLTS) Figure 8. RON vs. VCOM and VCC (@25C) Figure 9. RON vs. VCOM and Temperature, VCC = 2.0 V 45 2 30 40 20 25 RON (Ω) RON (Ω) 30 –55°C 20 25°C 15 10 15 125°C 25°C 85°C 10 85°C 5 125°C 5 0 –55°C 25 35 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2.2 2.4 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 VCOM (VOLTS) VCOM (VOLTS) Figure 10. RON vs. VCOM and Temperature, VCC = 2.5 V Figure 11. RON vs. VCOM and Temperature, VCC = 3.0 V 3 35.0 18 30.0 16 –55°C 25°C 25.0 12 TIME (nS) RON (Ω) 14 85°C 10 8 15.0 4 5.0 2 0.0 2.0 0 tON 10.0 125°C 6 20.0 tOFF 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 3.0 4.5 5.0 5.5 VCC (V) VCOM (VOLTS) Figure 12. RON vs. VCOM and Temperature, VCC = 4.5 V Figure 13. Switching Time vs. Supply Voltage, T = 25C http://onsemi.com 7 NLAS4501 0 0 BANDWIDTH (dB/Div) 5 VCC = 5.0 V TA = 25°C 10 100 1 10 OFF ISOLATION (dB/Div) 0 Phase (Degrees) PHASE (Degrees) Bandwidth (On – Loss) 10 –50 VCC = 5.0 V TA = 25°C –100 10 100 300 100 FREQUENCY (MHz) 1 10 100 300 FREQUENCY (MHz) Figure 14. ON Channel Bandwidth and Phase Shift Over Frequency Figure 15. Off Channel Isolation 100 1.60 1.40 10 VCC = 5.0 V 1.20 0.80 THD (%) Q (pC) 1.00 VCC = 3.0 V 1 3.3 V 0.60 0.1 0.40 5.5 V 0.20 0.00 0.0 0.01 1.0 2.0 3.6 3.0 VCOM (V) 4.0 4.5 10 5.0 100 1000 10000 100000 FREQUENCY (Hz) Figure 16. Charge Injection vs. VCOM Figure 17. THD vs. Frequency http://onsemi.com 8 1000000 NLAS4501 DEVICE ORDERING INFORMATION Device Nomenclature Circuit Indicator Temp Range Identifier NLAS4501DFT2 NLAS NLAS4501DTT1 NLAS Device Order Number Technology Device Function Package Suffix Tape & Reel Suffix Package Type (Name/SOT#/ Common Name) 74 VHC1G 66 DF T2 SC–88A / SOT–353 / SC–70 178 mm (7”) 3000 Unit 74 VHC1G 66 DT T1 TSOPS / SOT–23 / SC–59 178 mm (7”) 3000 Unit http://onsemi.com 9 Tape and Reel Size NLAS4501 P0 K t 10 PITCHES CUMULATIVE TOLERANCE ON TAPE ±0.2 mm (±0.008”) P2 D TOP COVER TAPE E A0 SEE NOTE 7 + K0 SEE NOTE 7 B1 F + B0 P EMBOSSMENT FOR MACHINE REFERENCE ONLY INCLUDING DRAFT AND RADII CONCENTRIC AROUND B0 W + USER DIRECTION OF FEED CENTER LINES OF CAVITY D1 FOR COMPONENTS 2.0 mm × 1.2 mm AND LARGER *TOP COVER TAPE THICKNESS (t1) 0.10 mm (0.004”) MAX R MIN. TAPE AND COMPONENTS SHALL PASS AROUND RADIUS “R” WITHOUT DAMAGE EMBOSSED CARRIER BENDING RADIUS 100 mm (3.937”) MAXIMUM COMPONENT ROTATION 10° EMBOSSMENT 1 mm MAX TYPICAL COMPONENT CAVITY CENTER LINE TAPE 1 mm 250 mm (0.039”) MAX (9.843”) TYPICAL COMPONENT CENTER LINE CAMBER (TOP VIEW) ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250 mm Figure 18. Carrier Tape Specifications EMBOSSED CARRIER DIMENSIONS (See Notes 6 and 7) Tape Size 8 mm B1 Max D D1 E F K P P0 P2 R T W 4.35 mm (0.171”) 1.5 +0.1/ –0.0 mm (0.059 +0.004/ –0.0”) 1.0 mm Min (0.039”) 1.75 +0.1 mm (0.069 +0.004”) 3.5 +0.5 mm (1.38 +0.002”) 2.4 mm (0.094”) 4.0 +0.10 mm (0.157 +0.004”) 4.0 +0.1 mm (0.156 +0.004”) 2.0 +0.1 mm (0.079 +0.002”) 25 mm (0.98”) 0.3 +0.05 mm (0.01 +0.0038/ –0.0002”) 8.0 +0.3 mm (0.315 +0.012”) 6. Metric Dimensions Govern–English are in parentheses for reference only. 7. A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to 0.50 mm max. The component cannot rotate more than 10° within the determined cavity. http://onsemi.com 10 NLAS4501 t MAX 1.5 mm MIN (0.06”) A 13.0 mm ±0.2 mm (0.512” ±0.008”) 50 mm MIN (1.969”) 20.2 mm MIN (0.795”) FULL RADIUS G Figure 19. Reel Dimensions REEL DIMENSIONS Tape Size T&R Suffix A Max G t Max 8 mm T1, T2 178 mm (7") 8.4 mm, +1.5 mm, –0.0 (0.33” + 0.059”, –0.0) 14.4 mm (0.56”) DIRECTION OF FEED BARCODE LABEL POCKET Figure 20. Reel Winding Direction http://onsemi.com 11 HOLE NLAS4501 CAVITY TAPE TOP TAPE TAPE TRAILER (Connected to Reel Hub) NO COMPONENTS 160 mm MIN COMPONENTS DIRECTION OF FEED Figure 21. Tape Ends for Finished Goods “T2” PIN ONE AWAY FROM SPROCKET HOLE User Direction of Feed Figure 22. DFT2 (SC88A) Reel Configuration/Orientation “T1” PIN ONE AWAY FROM SPROCKET HOLE User Direction of Feed Figure 23. DTT1 (TSOP5) Reel Configuration/Orientation http://onsemi.com 12 TAPE LEADER NO COMPONENTS 400 mm MIN NLAS4501 PACKAGE DIMENSIONS SC–88A / SOT–353 / SC–70 DF SUFFIX 5–LEAD PACKAGE CASE 419A–01 ISSUE E A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. V 5 DIM A B C D G H J K N S V 4 –B– S 1 2 3 D 5 PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 J C 0.4 mm (min) 0.5 mm (min) ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 1.9 mm ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ http://onsemi.com 13 0.65 mm 0.65 mm K H MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 NLAS4501 PACKAGE DIMENSIONS TSOP–5 / SOT–23 / SC–59 DT SUFFIX 5–LEAD PACKAGE CASE 483–01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. D S 5 4 1 2 3 B L DIM A B C D G H J K L M S G A J C 0.05 (0.002) H M K ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 0.094 2.4 0.037 0.95 0.074 1.9 0.037 0.95 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 0.039 1.0 http://onsemi.com 14 MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.00 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 0.028 0.7 inches mm INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 NLAS4501 Notes http://onsemi.com 15 NLAS4501 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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