IRF IRHYS593Z30CM

PD-96899
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597Z30CM
30V, P-CHANNEL
5
TECHNOLOGY
™
Product Summary
Part Number
Radiation Level RDS(on)
IRHYS597Z30CM 100K Rads (Si) 0.072Ω
IRHYS593Z30CM 300K Rads (Si) 0.072Ω
ID
-20A*
-20A*
Low-Ohmic
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ V GS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-20*
-18
-80
75
0.6
±20
200
-20
7.5
-1.84
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in./1.6mm from case for 10s)
4.3 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
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1
12/21/04
IRHYS597Z30CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
-30
—
—
V
—
-0.03
—
V/°C
—
—
0.072
Ω
VGS = -12V, ID = -18A Ã
-2.0
12
—
—
—
—
—
—
-4.0
—
-10
-25
V
S( )
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -18A Ã
VDS= -24V ,VGS = 0V
VDS = -24V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -20A
VDS = -15V
∆BVDSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
45
20
13
25
100
50
70
—
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1590
934
114
6.5
—
—
—
—
Ω
BVDSS
Parameter
µA
nA
nC
ns
nH
pF
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VDD = -15V, ID = -20A
VGS = -12V, RG = 7.5Ω
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
VGS = 0V, VDS = - 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-20*
-80
-5.0
75
125
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -20A, VGS = 0V Ã
Tj = 25°C, IF =-20A, di/dt ≤ -100A/µs
VDD ≤ -25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHYS597Z30CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Min Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source On-State Ã
Resistance(Low-OhmicTO-257AA)
Diode Forward Voltage Ã
300KRads(Si)2
Min
Max
Units
Test Conditions
-30
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.072
-30
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.072
nA
µA
Ω
VGS = 0V, ID = -1.0mA
V GS = VDS, ID = -1.0mA
VGS =-20V
VGS = 20 V
VDS = -24V, VGS =0V
VGS = -12V, ID = -18A
—
0.072
—
0.072
Ω
VGS = -12V, ID = -18A
—
-5.0
—
-5.0
V
VGS = 0V, IS = -20A
V
1. Part number IRHYS597Z30CM
2. Part number IRHYS593Z30CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
36
- 30
- 30
- 30
- 30
- 30
31
- 30
- 30
- 30
- 30
- 25
27
- 30
- 30
- 30
- 25
—
Energy
(MeV)
278.5
320
332
VDS
Br
I
Au
LET
(MeV/(mg/cm2))
37.5
59.7
81.4
-35
-30
-25
-20
-15
-10
-5
0
Br
I
Au
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHYS597Z30CM
Pre-Irradiation
100
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
10
-5.0V
60µs PULSE WIDTH
Tj = 25°C
1
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
-VDS , Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
-I D, Drain-to-Source Current (A)
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 150°C
T J = 25°C
10
VDS = -15V
15 WIDTH
60µs PULSE
ID = -20A
1.0
VGS = -12V
0.5
1
5
5.5
6
6.5
7
7.5
8
8.5
9
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
-5.0V
10
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
3000
IRHYS597Z30CM
20
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
-VGS, Gate-to-Source Voltage (V)
2500
ID = -20A
C, Capacitance (pF)
C oss = C ds + C gd
2000
Ciss
1500
Coss
1000
500
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
0
100
5
10 15 20 25 30 35 40 45 50
QG, Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
T J = 150°C
-I D, Drain-to-Source Current (A)
-I SD , Reverse Drain Current (A)
VDS= -24V
VDS= -15V
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
VGS = 0V
1
0.1
0
1
2
3
4
5
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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6
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHYS597Z30CM
Pre-Irradiation
32
28
-ID , Drain Current (A)
RD
V DS
LIMITED BY PACKAGE
V GS
D.U.T.
RG
24
-
+
20
V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
16
12
Fig 10a. Switching Time Test Circuit
8
td(on)
4
0
tr
t d(off)
tf
VGS
10%
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
t1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
t2
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHYS597Z30CM
L
500
-
D.U.T
RG
VGS
-20V
+
IAS
tp
VVDD
DD
DRIVER
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
VDS
ID
TOP
-8.9A
-12.6A
BOTTOM -20A
400
300
200
100
0
I AS
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V
12V
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHYS597Z30CM
Pre-Irradiation
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -25V, starting TJ = 25°C, L=1.0mH
Peak IL =- 20A, VGS = -12V
 ISD ≤ -20A, di/dt ≤ -180A/µs,
VDD ≤ -30V, TJ ≤ 150°C
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low-Ohmic TO-257AA
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
3X Ø
3.81 [.150]
3.56 [.140]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
1
2
5.08 [.200]
4.83 [.190]
1.14 [.045]
0.89 [.035]
B
10.92 [.430]
10.42 [.410]
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
C A
3.05 [.120]
B
NOT ES :
1.
2.
3.
4.
DIMENS IONING & TOLERANCING PER ANS I Y14.5M-1994.
CONTROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
T O-257AA TABLES S IS A MODIFIED JE DEC OUTLINE T O-257AA.
LEAD ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/2004
8
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