IRF IRHNJ597034

PD - 94608
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ597034
60V, P-CHANNEL
4#
TECHNOLOGY
c
Product Summary
Part Number Radiation Level
IRHNJ597034 100K Rads (Si)
IRHNJ593034 300K Rads (Si)
RDS(on)
0.06Ω
0.06Ω
ID
-22A
-22A
SMD-0.5
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
-22*
-16
-88
75
0.6
±20
107
-22
7.5
-1.4
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( for 5s )
1.0 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
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1
02/13/03
IRHNJ597034
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-60
—
—
V
—
0.063
—
V/°C
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
—
—
0.06
Ω
VGS = -12V, ID = -16A
-2.0
10
—
—
—
—
—
—
-4.0
—
-10
-25
V
S( )
VDS = VGS, ID = -1.0mA
VDS = -25V, IDS = -16A ➃
VDS= -48V ,VGS=0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -22A
VDS = -30V
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Test Conditions
Ω
BVDSS
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
38
15
13
25
50
75
50
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1540
590
60
—
—
—
nA
nC
VDD = -30V, ID = -22A,
VGS =-12V, RG = 7.5Ω,
ns
nH
➃
Measured from the center of
drain pad to center of source pad
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-22*
-88
-5.0
100
200
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -22A, VGS = 0V ➃
Tj = 25°C, IF =-22A, di/dt ≤ -100A/µs
VDD ≤ -25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
6.9
1.67
—
Units
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNJ597034
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (SMD-0.5)
Diode Forward Voltage ➃
100K Rads(Si)1
Min
Max
300KRads(Si)2
Min
Max
-60
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.06
-60
-2.0
—
—
—
—
—
-5.0
-100
100
-10
0.06
—
0.06
—
—
-5.0
—
Units
Test Conditions
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS =-20V
VGS = 20 V
VDS =-48V, VGS =0V
VGS = -12V, I D =-16A
0.06
Ω
VGS = -12V, ID =-16A
-5.0
V
VGS = 0V, IS = -22A
V
nA
1. Part number IRHNJ597034
2. Part number IRHNJ593034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Energy
(MeV)
252.6
314
350
VDS
Br
I
Au
LET
(MeV/(mg/cm2))
37.9
59.7
82.3
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
33.1
- 60
- 60
- 60
- 60
- 60
30.5
- 60
- 60
- 60
- 45
- 25
28.4
- 60
- 60
- 60
—
—
-70
-60
-50
-40
-30
-20
-10
0
Br
I
Au
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ597034
100
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
BOTTOM -5.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
Pre-Irradiation
-5.0V
10
20µs PULSE WIDTH
Tj = 25°C
1
10
20µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
-VDS , Drain-to-Source Voltage (V)
-I D , Drain-to-Source Current ( Α)
T J = 25°C
T J = 150°C
VDS = -25V
15
20µs PULSE
WIDTH
10
7
8
9
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
6
10
100
Fig 2. Typical Output Characteristics
100
5
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
-5.0V
ID = -22A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
2500
16
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Ciss
1500
VDS= -48V
VDS= -30V
ID= -22A
Crss = Cgd
Coss = Cds + Cgd
-V GS, Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
IRHNJ597034
Coss
1000
500
VDS= -12V
12
8
4
Crss
0
0
1
10
100
0
5
-VDS, Drain-to-Source Voltage (V)
15
20
25
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
-I D , Drain-to-Source Current (A)
-I SD , Reverse Drain Current ( Α)
10
QG Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 25°C
10
T J = 150°C
VGS = 0V
1.0
0.5
1.5
2.5
3.5
4.5
5.5
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1
6.5
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
1000
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ597034
Pre-Irradiation
30
VGS
25
-ID , Drain Current (A)
RD
VDS
LIMITED BY PACKAGE
D.U.T.
RG
-
V DD
+
20
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
10
Fig 10a. Switching Time Test Circuit
VDS
5
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ597034
L
-
D .U .T
RG
+
IA S
VGS
-2
0V
tp
200
VVDD
DD
A
D R IV E R
0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
VDS
TOP
160
BOTTOM
ID
-10A
-14A
-22A
120
80
40
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
-12V
12V
.2µF
.3µF
-12 V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNJ597034
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = - 25V, starting TJ = 25°C, L=0.44mH
Peak IL = - 22A, VGS = -12V
➂ ISD ≤ - 22A, di/dt ≤ - 290A/µs,
VDD ≤ - 60V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
-48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
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