FLM4450-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: ηadd=41%(Typ.) ・Broad Band: 4.4~5.0GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM4450-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Symbol VDS Rating 15 Unit Gate-Source Voltage VGS -5 Total Power Dissipation PT 115.4 Storage Temperature Tstg -65 to +175 oC Channel Temperature Tch 175 oC V V W RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C) Item Symbol DC Input Voltage Condition V DS Forward Gate Current IGF RG=13Ω Reverse Gate Current IGR RG=13Ω Limit Unit ≤ 12 V ≤ 107.2 ≥ -23.2 mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Symbol Test Conditions Limit Typ. 16.0 Max. 24.0 Unit Drain Current IDSS V DS=5V, V GS =0V Min . - Transconductance gm V DS=5V, I DS =8.0A - 8000 - Pinch-off Voltage Vp VDS =5V, I DS =960mA -1.0 -2.0 -3.5 V Gate-Source Breakdown Voltage V GSO IGS=-960µA -5.0 - - V Output Power at 1dB G.C.P . P1dB - dBm Power Gain at 1dB G.C.P. G1dB V DS =12V f=4.4 - 5.0 GHz IDS=7.0A (Typ.) Zs=Z L=50Ω 46 46.5 9.0 10.0 - dB - 8.0 10.0 A Drain Current Idsr Power-Added Efficiency η add - 41 - Gain Flatness ∆ G - - 1.2 Thermal Resistance Channel Temperature Rise Rth Channel to Case - 1.1 1.3 ∆ Tch 12V X Idsr X Rth - - 100 CASE STYLE: IK ESD % dB C/W o C o G.C.P.:Gain Compression Point Class Ⅲ 2000V ~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.3 September 2004 A mS 1 FLM4450-45F C-Band Internally Matched FET OUTPUT POWER , POWER ADDED EFFICIENCY vs. INPUT POWER POWER DERATING CURVE V D S =12 V , ID S - 7 . 0 A , f =5 . 0 GHz 120 80 80 48 70 46 60 P o ut 44 50 42 60 40 40 40 30 P . A . E. 38 20 36 10 20 0 0 50 100 150 34 200 0 24 Case Tem perature [ o C] 26 28 30 32 34 36 Inp ut P o w e r[ d B m] OUTPUT POWER vs. FREQUENCY VDS=12V, IDS=7.0A 50 P1dB 48 Output Power[dBm] Total Power Dissipation [W] 100 50 Pin=38dBm 46 36dBm 34dBm 44 42 31dBm 40 4.3 4.4 4.5 4.6 4.7 4.8 Freque ncy[GHz] 2 4.9 5.0 5.1 38 40 FLM4450-45F C-Band Internally Matched FET ■ S-PARAMETER +90° +50j +100j +25j +250j 5.0 4.4G H z 0 10Ω 4.4GHz 4.7 ∞ 25 4.7 ±180° 5 5.0 2 5.0 Scale for |S21| 4.7 -250j -10j 0.2 4.4G H z 5.0 -25j -100j -50j S 11 0° 4.4GHz Scale for |S 12| +10j 4.7 0.5 -90° S 22 VDS=12V, IDS=7.0A Freq [GHz] 4.20 4.30 4.40 4.50 4.60 4.70 4.80 4.90 5.00 5.10 5.20 S11 MAG ANG 0.51 -171.90 0.51 162.50 0.50 137.60 0.48 113.30 0.43 87.60 0.37 59.20 0.31 24.40 0.28 -18.00 0.31 -63.60 0.39 -100.40 0.48 -128.30 S21 MAG 3.12 3.28 3.41 3.50 3.53 3.52 3.48 3.36 3.19 2.97 2.71 ANG 63.20 42.50 21.10 -0.10 -21.70 -43.10 -64.70 -86.20 -108.20 -129.20 -149.40 3 S12 MAG 0.04 0.05 0.06 0.06 0.07 0.08 0.08 0.08 0.08 0.08 0.08 ANG 29.60 3.50 -23.30 -46.90 -69.30 -92.30 -115.30 -137.00 -158.10 -178.50 162.30 S22 MAG ANG 0.57 -33.00 0.51 -53.10 0.46 -76.70 0.43 -103.40 0.42 -132.90 0.44 -159.90 0.47 176.30 0.49 153.10 0.49 133.10 0.50 114.10 0.50 97.90 S 12 S 21 FLM4450-45F C-Band Internally Matched FET ■ Package Out Line Case Style : IK PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM4450-45F C-Band Internally Matched FET Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 5