FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃) Item Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V Total Power Dissipation PT 93.7 W Storage Temperature Tstg -65 to +175 ℃ Channel Temperature Tch 175 ℃ Recommended Operating Condition(Case Temperature Tc=25℃) Item Symbol DC Input Voltage VDS Forward Gate Current IGF Reverse Gate Current IGR Unit Limit Condition ≦10 V RG=25Ω ≦64 mA RG=25Ω ≧-11.2 mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃) Item Test Conditions Symbol VDS=5V , VGS=0V Min. - Limit Typ. 10.8 Max. 16.2 10000 - mS V Drain Current IDSS Transconductance gm VDS=5V , IDS=6.92A - Pinch-off Voltage Vp VDS=5V , IDS=500mA -0.5 -1.5 -3.0 Gate-Source Breakdown Voltage VGSO IGS=-500uA -5.0 - - Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Idsr Drain Current Power-added Efficiency ηadd Gain Flatness ΔG Thermal Resistance Channel Temperature Rise VDS=10V f=9.5 - 10.5 GHz IDS=0.6Idss Zs=ZL=50Ω - V dBm 6.0 7.0 - dB A - 6.5 7.2 - 30 - % - - ±0.6 dB Channel to Case - 1.4 1.6 ℃/W ΔTch 10V X Idsr X Rth - - 100 ℃ G.C.P.:Gain Compression Point Class Ⅲ 2000V ～ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.3 September 2004 44 A Rth CASE STYLE: IK ESD 43 Unit 1 FLM0910-25F X-Band Internally Matched FET OUTPUT POWER & POWER ADDED EFFICIENCY vs. INPUT POWER POWER DERATING CURVE Output Power (dBm) 80 60 40 20 46 70 44 60 42 50 40 40 38 30 36 20 34 10 32 0 0 50 100 150 0 24 200 26 28 30 32 34 36 38 Input Pow er (dBm ) Case Temperature [o C] OUTPUT POWER vs. FREQUENCY VDS=10V, IDS(DC)=0.60IDSS 46 Pin=39dBm P1dB 44 Output Power (dBm) Total Power Dissipation [W] 100 Pin=37dBm 42 Pin=34dBm 40 Pin=30dBm 38 36 34 Pin=26dBm 32 9.2 9.4 9.6 9.8 10 10.2 Frequency (GHz) 2 10.4 10.6 10.8 40 42 Power Added Efficiency (%) VDS=10V, IDS(DC)=0.60IDSS, f=10.0GHz FLM0910-25F X-Band Internally Matched FET ■ S-PARAMETER +90° 25 10 10.5 10 9.5G H z 10.5 10.5 ±180° 3 9.5G H z 2 Scale for |S21| 10.5 0° 9.5GHz Scale for |S 12| 10 10 9.5GHz 0.2 -90° S 11 S 22 S 12 S 21 VDS=10V , IDS=0.6Idss S 11 F req S 21 S 12 S 22 [G H z] M AG ANG M AG ANG M AG ANG M AG ANG 9 9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 9.9 10 10.1 10.2 10.3 10.4 10.5 10.6 10.7 10.8 10.9 11 0.71 0.65 0.59 0.53 0.47 0.42 0.39 0.37 0.37 0.38 0.40 0.41 0.43 0.44 0.44 0.44 0.43 0.42 0.40 0.37 0.34 -88.02 -103.53 -120.18 -138.00 -156.97 -177.22 161.48 138.88 116.07 93.62 72.47 52.59 33.84 16.24 -0.56 -17.05 -33.47 -50.45 -68.63 -89.03 -113.11 2.15 2.29 2.40 2.47 2.51 2.53 2.56 2.59 2.62 2.63 2.64 2.62 2.60 2.57 2.53 2.50 2.47 2.44 2.43 2.43 2.42 35.09 18.28 1.32 -15.34 -31.59 -47.33 -62.74 -78.13 -93.65 -109.43 -125.14 -140.95 -156.81 -172.15 172.43 156.88 141.58 126.23 110.45 94.22 77.32 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.08 15.25 -1.55 -17.77 -34.01 -49.64 -64.58 -79.62 -94.61 -109.43 -124.61 -140.33 -155.72 -172.24 171.03 154.60 137.92 120.72 103.61 85.80 68.12 50.38 0.26 0.22 0.21 0.22 0.24 0.26 0.29 0.30 0.31 0.32 0.32 0.32 0.32 0.32 0.33 0.33 0.33 0.33 0.32 0.30 0.27 -77.71 -107.05 -138.65 -167.56 168.82 149.54 133.93 120.00 107.27 95.51 84.23 73.93 63.61 54.33 44.93 35.26 25.29 15.68 6.13 -2.58 -9.87 3 FLM0910-25F X-Band Internally Matched FET ■ Package Out Line CASE STYLE : IK Unit : mm PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM0910-25F X-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan TEL +81-45-853-8156 FAX +81-45-853-8170 5