S505TX/S505TXR/S505TXRW Vishay Semiconductors MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Easy Gate 1 switch-off with PNP switching transistors inside PLL e3 • High AGC-range with less steep slope • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance (30 mS typ.) • Improved cross modulation at gain reduction • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 4 2 1 SOT-143R 4 3 1 2 SOT-343R 4 3 19216 Electrostatic sensitive device. Observe precautions for handling. Applications Mechanical Data Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage. Typ: S505TX Case: SOT-143 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S505TXR Case: SOT-143R Plastic case Weight: approx. 8.0 mg Pinning:1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typ: S505TXRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Typical Application RFC C block AGC C block RF in VGG (VRG1) VDD(VDS) D G2 RF out G1 S C block RG1 13650 Parts Table Part Marking Package S505TX X05 SOT-143 S505TXR X7R SOT-143R S505TXRW WX7 SOT-343R Document Number 85080 Rev. 1.2, 29-Apr-05 www.vishay.com 1 S505TX/S505TXR/S505TXRW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value VDS 8 V ID 30 mA ± IG1/G2SM 10 mA Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1 - source voltage Gate 2 - source voltage Unit + VG1S 6 V - VG1S 1.5 V ± VG2SM 6 V Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Symbol Value Unit RthChA 450 K/W Total power dissipation Tamb ≤ 60 °C Maximum Thermal Resistance Parameter Channel ambient 1) Test condition 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min V(BR)DSS 12 Typ. Max Unit Drain - source breakdown voltage ID = 10 μA, VG1S = VG2S = 0 Gate 1 - source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR)G1SS 7 10 V Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 7 10 V nA V Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 + IG1SS 20 Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS 20 nA Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ IDSO 8 20 mA 1.3 V 1.4 V Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 μA VG1S(OFF) 0.5 Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, RG1 = 56 kΩ, ID = 20 μA VG2S(OFF) 0.8 14 1.0 Remark on improving intermodulation behavior: By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed. Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ, ID = IDSO, f = 1 MHz Symbol Min Typ. Max Unit Forward transadmittance Parameter Test condition |y21s| 27 30 35 mS Gate 1 input capacitance Cissg1 1.8 2.2 pF 30 Feedback capacitance Crss 20 Output capacitance Coss 1.0 www.vishay.com 2 fF pF Document Number 85080 Rev. 1.2, 29-Apr-05 S505TX/S505TXR/S505TXRW Vishay Semiconductors Parameter Test condition Power gain Symbol GS = 2 mS, GL = 0.5 mS, f = 200 MHz Gps GS = 3,3 mS, GL = 1 mS, f = 800 MHz Gps ΔGps Min Typ. Max Unit 28 dB 17 22 dB 45 50 dB AGC range VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1 dB GS = 3.3 mS, GL = 1 mS, f = 800 MHz F 1.3 dB Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 100 dBμV 105 dBμV 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 1.1 [0.043] 0.9 [0.035] 0.08 [0.003] 0.15 [0.006] 3 [0.118] 2.8 [0.110] 0.1 [0.004] max. Package Dimensions in mm 2.6 [0.102] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.5 [0.020] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] foot print recommendation: 96 12239 Document Number 85080 Rev. 1.2, 29-Apr-05 1.2 [0.047] 0.8 [0.031] 0.8 [0.031] 1.9 [0.075] 2 [0.079] 2 [0.079] 1.8 [0.071] 0.9 [0.035] 0.9 [0.035] 1.4 [0.055] 1.2 [0.047] 1.7 [0.067] 1.2 [0.047] www.vishay.com 3 S505TX/S505TXR/S505TXRW Vishay Semiconductors 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 1.1 [0.043] 0.9 [0.035] 0.08 [0.003] 3 [0.118] 2.8 [0.110] 0.15 [0.006] 0.1 [0.004] max. Package Dimensions in mm 2.6 [0.102] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.5 [0.020] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] foot print recommendation: 2 [0.079] 1.8 [0.071] 96 12240 1.2 [0.047] 0.8 [0.031] 0.8 [0.031] 2 [0.079] 0.9 [0.035] 0.9 [0.035] 1.4 [0.055] 1.2 [0.047] 1.7 [0.067] 0.8 [0.031] 1.9 [0.075] 0.4 [0.016] 0.25 [0.010] 0.4 [0.016] 0.25 [0.010] 1 [0.039] 0.8 [0.031] 0.2 [0.008] 0.1 [0.004] 2.2 [0.087] 1.8 [0.071] 0.1 [0.004] max. Package Dimensions in mm 0.15 [0.006] min. 2.2 [0.087] 2 [0.079] 1.25 [0.049] 1.05 [0.041] foot print recommendation: 0.7 [0.028] 0.55 [0.022] 0.4 [0.016] 0.25 [0.010] 1.15 [0.045] 0.06 [0.024] 96 12238 www.vishay.com 4 0.8 [0.031] 1.4 [0.055] 1.2 [0.047] 1.6 [0.063] 1.35 [0.053] 1.15 [0.045] 0.9 [0.035] 1.3 [0.051] Document Number 85080 Rev. 1.2, 29-Apr-05 S505TX/S505TXR/S505TXRW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85080 Rev. 1.2, 29-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1