VISHAY TSDF1920W_08

Not for new design, this product will be obsoleted soon
TSDF1920W
Vishay Semiconductors
25 GHz Silicon NPN Planar RF Transistor
Features
•
•
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•
•
•
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1
Very low noise figure
Very high power gain
e3
High transition frequency fT = 24 GHz
Low feedback capacitance
Emitter pins are thermal leads
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
4
2
3
16712
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Mechanical Data
For RF front-ends, low noise, and wideband applications, such as in analogue and digital cellular and
cordless phones
(DECT, PHD), in TV systems (e.g. satellite tuners), in
high frequency oscillators up to 12 GHz, in pagers
and radar detectors.
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Emitter, 2 = Base,
3 = Emitter, 4 = Collector
Parts Table
Part
Marking
TSDF1920W
Package
YH3
SOT-343R
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Collector-base voltage
Parameter
Test condition
VCBO
10
V
Collector-emitter voltage
VCEO
3.5
V
Emitter-base voltage
VEBO
1.5
V
Collector current
Total power dissipation
Tamb ≤ 60 °C
Junction temperature
Storage temperature range
IC
40
mA
Ptot
200
mW
Tj
150
°C
Tstg
- 65 to + 150
°C
Symbol
Value
Unit
RthJA
450
K/W
Maximum Thermal Resistance
Parameter
Junction ambient
1)
Test condition
1)
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Document Number 85092
Rev. 1.4, 05-Sep-08
www.vishay.com
1
TSDF1920W
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Max
Unit
Collector-emitter cut-off current
Parameter
VCE = 5 V, VBE = 0
Test condition
ICES
100
μA
Collector-base cut-off current
VCB = 5 V, IE = 0
ICBO
100
nA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
Collector-emitter saturation
voltage
IC = 30 mA, IB = 3 mA
DC forward current transfer ratio VCE = 2 V, IC = 20 mA
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2
Symbol
Min
3.5
VCEsat
hFE
Typ.
50
V
0.1
0.25
100
150
V
Document Number 85092
Rev. 1.4, 05-Sep-08
TSDF1920W
Vishay Semiconductors
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Transition frequency
Test condition
Symbol
VCE = 2 V, IC = 25 mA, f = 1 GHz
fT
Min
Typ.
24
Max
Unit
GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz
Ccb
0.15
Collector-emitter capacitance
VCE = 2 V, f = 1 MHz
Cce
0.4
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
0.6
pF
Noise figure
VCE = 2 V, IC = 5 mA, ZS = ZSopt,
ZL = ZLopt, f = 2 GHz
F
1.2
dB
Power gain, maximum stable
gain
VCE = 2 V, IC = 25 mA,
ZS = ZSopt, ZL = ZLopt,
f = 2 GHz
Gpe = Gms =
| S21e/S12e |
19
dB
Transducer gain
VCE = 2 V, IC = 25 mA,
ZS = ZL= 50 Ω, f = 2 GHz
| S21e | 2
16.4
dB
Third order intercept point at
output
VCE = 2 V, IC = 25 mA,
ZS = ZL= 50 Ω, f = 2 GHz
IP3
22
dBm
1 dB compression point
VCE = 2 V, IC = 25 mA,
ZS = ZL= 50 Ω, f = 2 GHz
P-1dB
12
dBm
13.5
0.3
pF
pF
Package Dimensions in mm
96 12238
Document Number 85092
Rev. 1.4, 05-Sep-08
www.vishay.com
3
TSDF1920W
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
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Document Number 85092
Rev. 1.4, 05-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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