BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance Low input capacitance Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 1 G2 D G1 S Electrostatic sensitive device. Observe precautions for handling. Applications Mechanical Data Input- and mixer stages especially UHF-tuners. Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF966S Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 13625 Parts Table Part Ordering Ccode Marking Package BF966S BF966SA or BF966SB BF966S TO50 BF966SA BF966SA BF966S TO50 BF966SB BF966SB BF966S TO50 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Tamb ≤ 60 °C Symbol Value Unit VDS 20 V ID 30 mA ± IG1/G2SM 10 mA mW Ptot 200 Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Symbol Value Unit RthChA 450 K/W Maximum Thermal Resistance Parameter Channel ambient 1) Test condition 1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 µm Cu Document Number 85004 Rev. 1.5, 15-Apr-05 www.vishay.com 1 BF966S Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Symbol Min Drain - source breakdown voltage Parameter ID = 10 µA, - VG1S = - VG2S = 4 V Test condition Part V(BR)DS 20 Typ. Max Unit Gate 1 - source breakdown voltage ± IG1S = 10 mA, VG2S = VDS = 0 ± V(BR)G1SS 8 14 V Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 8 14 V V Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0 ± IG1SS 50 nA Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS 50 nA Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V BF966S BF966SA BF966SB IDSS 4 18 mA IDSS 4 10.5 mA IDSS 9.5 18 mA Gate 1 - source cut-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA -VG1S(OFF) 2.5 V Gate 2 - source cut-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA -VG2S(OFF) 2.0 V Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Parameter Test condition Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance VG1S = 0, VG2S = 4 V Symbol Min Typ. | y21s | 15 18.5 Cissg1 2.2 Cissg2 1.1 Max Unit mS 2.6 pF pF Feedback capacitance Crss 25 35 fF Output capacitance Coss 0.8 1.2 pF GS = 2 mS, GL = 0.5 mS, f = 200 MHz Gps 25 dB GS = 3,3 mS, GL = 1 mS, f = 800 MHz Gps 18 dB Power gain ∆Gps AGC range VG2S = 4 to -2 V, f = 800 MHz Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz F 1.0 dB GS = 3,3 mS, GL = 1 mS, f = 800 MHz F 1.8 dB 40 dB 300 36 200 150 100 50 0 1.5 V 1V 28 V G2S = 4 V 24 0.5 V 20 16 0V 12 8 –0.5 V 4 –1 V 0 0 96 12159 20 40 60 80 100 120 140 160 Tamb - Ambient Temperature ( °C ) Figure 1. Total Power Dissipation vs. Ambient Temperature www.vishay.com 2 V G1S = 2 V 32 250 ID – Drain Current ( mA ) Ptot -Total Power Dissipation ( mW ) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 0 12762 2 4 6 8 10 12 14 16 V DS – Drain Source Voltage ( V ) Figure 2. Drain Current vs. Drain Source Voltage Document Number 85004 Rev. 1.5, 15-Apr-05 BF966S Vishay Semiconductors ID – Drain Current ( mA ) 90 V DS = 15 V 80 V G2S = 6 V 5V 70 4V 60 50 3V 40 2V 30 1V 20 0V –1 V 10 0 –1 0 1 2 3 4 5 V G1S – Gate 1 Source Voltage ( V ) 12763 60 3V 50 2V 40 1V 30 20 0V 10 –1 V 0 –1 0 1 2 3 4 5 V G2S – Gate 2 Source Voltage ( V ) 12764 1.00 0.75 0.50 0.25 0 2 12766 4 6 8 10 12 14 16 18 20 V DS – Drain Source Voltage ( V ) Figure 6. Output Capacitance vs. Drain Source Voltage 4.0 3.6 V DS = 15 V V G1S = 0 3.2 f = 1 MHz 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 –3 12767 –2 –1 0 1 2 3 4 5 6 V G2S – Gate 2 Source Voltage ( V ) Figure 7. Gate 2 Input Capacitance vs. Gate 2 Source Voltage 10 4.0 V DS = 15 V VG2S = 4 V f = 1 MHz 3.5 3.0 2.5 2.0 –10 1.0 0.5 –20 0V –30 –0.5 V –40 –1 V –60 V G2S = –2...–3 V –70 0.0 0 3 6 12765 9 12 15 18 21 24 27 30 I D – Drain Current ( mA ) Figure 5. Gate 1 Input Capacitance vs. Drain Current Document Number 85004 Rev. 1.5, 15-Apr-05 4V 3V 2V 1V –50 2 1.5 f = 200 MHz 0 S 21 Cissg1 – Gate 1 Input Capacitance ( pF ) Figure 4. Drain Current vs. Gate 2 Source Voltage 1.25 Cissg2 – Gate 2 Input Capacitance ( pF ) V DS = 15 V V G1S = 4 V VG2S = 4 V I D = 10 mA f = 1 MHz 1.50 –Transducer Gain( dB ) ID – Drain Current ( mA ) 70 1.75 0.00 Figure 3. Drain Current vs. Gate 1 Source Voltage 80 2.00 Coss – Output Capacitance ( pF ) 100 –5 12768 –4 –3 –2 –1 0 1 2 3 V G1S – Gate 1 Source Voltage ( V ) Figure 8. Transducer Gain vs. Gate 1 Source Voltage www.vishay.com 3 BF966S 24 22 20 18 16 14 12 10 8 6 4 2 0 5 V G2S = 4 V V DS = 15 V f = 1 MHz –5 3V 2V –10 –15 400 MHz –20 700 MHz –25 1V 0V f = 100 MHz I D = 5 mA 10 mA 20 mA 1000 MHz –30 1300 MHz –35 0.5 V –40 0 5 10 15 20 25 I D – Drain Current ( mA ) 12769 –8 30 20 1000 MHz I D = 20 mA 12 700 MHz 8 400 MHz 6 4 2 V DS = 15 V V G2S = 4 V f = 100...1300 MHz 2 4 6 8 10 12 14 16 18 20 Re (y11) ( mS ) Figure 10. Short Circuit Input Admittance 1000 MHz 5 700 MHz 4 3 400 MHz 1 100 MHz 0 20 mA I D= 5 mA 2 0 12770 24 I D = 10 mA 6 Im ( y22) ( mS ) 14 20 f = 1300 MHz 7 I D = 10 mA 10 4 8 12 16 Re (y21 ) ( mS ) 8 I D = 5 mA 16 0 Figure 12. Short Circuit Forward Transfer Admittance f = 1300 MHz 18 –4 12771 Figure 9. Forward Transadmittance vs. Drain Current Im ( y11 ) ( mS ) V DS = 15 V V G2S = 4 V f = 100...1300 MHz 0 Im ( y21) ( mS ) Y21S – ForwardTransadmittance ( mS ) Vishay Semiconductors 100 MHz 0 0.0 12773 0.5 V DS = 15 V V G2S = 4 V f =1 00...1300 MHz 1.0 1.5 2.0 Re (y22) ( mS ) 2.5 Figure 13. Short Circuit Output Admittance 0.3 f = 1300 MHz Im ( y12 ) ( mS ) 0.2 0.1 I D = 5 mA 10 mA 20 mA 1000 MHz 0.0 700 MHz –0.1 0.0 12772 0.1 V DS = 15 V V G2S = 4 V f = 100...1300 MHz 0.2 0.3 0.4 Re (y12) ( mS ) 0.5 Figure 11. Short Circuit Reverse Transfer Admittance www.vishay.com 4 Document Number 85004 Rev. 1.5, 15-Apr-05 BF966S Vishay Semiconductors VDS = 15 V, ID = 5 to 20 mA, VG2S = 4 V, Z0 = 50 Ω S11 S12 90 ° j 120 ° j0.5 j0.2 150 ° ID= 20 mA 1300 MHz ID= 10 mA 1000 ID= 5 mA j5 0 0.2 0.5 1 2 5 100 1300 MHz –j0.2 60 ° j2 ∞ ı 400 100 180 ° 0.008 0.016 0 ° –j5 400 –150 ° 1000 700 –j0.5 30 ° –30 ° –j2 –120 ° 12924 –j –60 ° –90 ° 12925 Figure 16. Reverse Transmission Coefficient Figure 14. Input Reflection Coefficient S21 S22 ID= 20 mA ID= 10 mA ID= 5 mA 90° 120 ° 400 j 60 ° 700 j0.5 1000 150 ° j2 30 ° j0.2 j5 1300 MHz 100 180° 0.8 1.6 0° 0 0.5 1 Figure 15. Forward Transmission Coefficient Rev. 1.5, 15-Apr-05 –j5 1300 MHz –j2 –60° –90 ° Document Number 85004 ı 5 100 ∞ 700 –j0.5 –120° 12926 2 –j0.2 –30° –150 ° 0.2 12927 –j Figure 17. Output Reflection Coefficient www.vishay.com 5 BF966S Vishay Semiconductors Package Dimensions in mm 96 12242 www.vishay.com 6 Document Number 85004 Rev. 1.5, 15-Apr-05 BF966S Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85004 Rev. 1.5, 15-Apr-05 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1