NTLJD3119C Power MOSFET 20 V/−20 V, 4.6 A/−4.1 A, mCoolt Complementary, 2x2 mm, WDFN Package Features • Complementary N−Channel and P−Channel MOSFET • WDFN Package with Exposed Drain Pad for Excellent Thermal • • • • • Conduction Footprint Same as SC−88 Package Leading Edge Trench Technology for Low On Resistance 1.8 V Gate Threshold Voltage Low Profile (< 0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device RDS(on) MAX ID MAX 65 mW @ 4.5 V 3.8 A 75 mW @ 2.5 V 2.0 A 120 mW @ 1.8 V 1.7 A 100 mW @ −4.5 V −4.1 A 135 mW @ −2.5 V −2.0 A 200 mW @ −1.8 V −1.6 A V(BR)DSS N−Channel 20 V Applications • Synchronous DC−DC Conversion Circuits • Load/Power Management of Portable Devices like PDA’s, Cellular • http://onsemi.com P−Channel −20 V Phones and Hard Drives Color Display and Camera Flash Regulators D2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) Steady State P−Channel Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t≤5s t≤5s Steady State t≤5s N−Channel Continuous Drain Current (Note 2) P−Channel Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State Steady State N−Ch P−Ch N−Ch P−Ch TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C Symbol Value Unit VDSS 20 −20 ±8.0 V A PD 3.8 2.8 4.6 −3.3 −2.4 −4.1 1.5 W ID 2.3 2.6 A VGS ID ID TA = 85°C TA = 25°C TA = 85°C Steady TA = 25°C State N−Ch Pulsed Drain Current tp = 10 ms P−Ch Operating Junction and Storage Temperature Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Pin 1 −2.3 October, 2006 − Rev. 0 D1 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D2 A (Top View) PD 0.71 W IDM 18 −20 −55 to 150 260 A TL 6 5 4 PIN CONNECTIONS −1.6 TJ, TSTG 1 JMMG 2 G 3 JD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) A 1 ORDERING INFORMATION Device Package Shipping† °C NTLJD3119CTAG WDFN6 (Pb−Free) 3000/Tape & Reel °C NTLJD3119CTBG WDFN6 (Pb−Free) 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. © Semiconductor Components Industries, LLC, 2006 WDFN6 CASE 506AN V 1.9 ID MARKING DIAGRAM D1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTLJD3119C/D NTLJD3119C THERMAL RESISTANCE RATINGS Parameter Symbol Max Junction−to−Ambient – Steady State (Note 3) RqJA 83 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 177 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 54 Unit SINGLE OPERATION (SELF−HEATED) °C/W DUAL OPERATION (EQUALLY HEATED) Junction−to−Ambient – Steady State (Note 3) RqJA 58 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 133 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 40 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu). http://onsemi.com 2 °C/W NTLJD3119C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P V(BR)DSS N Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage VGS = 0 V P Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V(BR)DSS/TJ IDSS IGSS ID = 250 mA 20 ID = −250 mA −20 V N 10.4 P 9.95 N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS = −16 V N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS = −16 V mV/°C 1.0 TJ = 25 °C mA −1.0 10 TJ = 85 °C −10 N VDS = 0 V, VGS = ±8.0 V ±100 P VDS = 0 V, VGS = ±8.0 V ±100 nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(TH) N VGS(TH)/TJ N −3.0 P 2.44 VGS = VDS P Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance RDS(on) gFS ID = 250 mA 0.4 0.7 1.0 ID = −250 mA −0.4 −0.7 −1.0 V mV/°C N VGS = 4.5 V , ID = 3.8 A 37 65 P VGS = −4.5 V , ID = −4.1 A 75 100 N VGS = 2.5 V , ID = 2.0 A 46 75 P VGS = −2.5 V, ID = −2.0 A 101 135 N VGS = 1.8 V , ID = 1.7 A 65 120 P VGS = −1.8 V, ID = −1.6 A 150 200 N VDS = 10 V, ID = 1.7 A 4.2 P VDS = −5.0 V , ID = −2.0 A 3.1 mW S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance CISS COSS N VDS = 10 V 271 P VDS = −10 V 531 VDS = 10 V 72 VDS = −10 V 91 N VDS = 10 V 43 P VDS = −10 V 56 N P Reverse Transfer Capacitance CRSS f = 1.0 MHz, VGS = 0 V Total Gate Charge QG(TOT) N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 3.7 P VGS = −4.5 V, VDS = −10 V, ID = −2.0 A 5.5 Threshold Gate Charge QG(TH) N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 0.3 P VGS = −4.5 V, VDS = −10 V, ID = −2.0 A 0.7 N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 0.6 P VGS = −4.5 V, VDS = −10 V, ID = −2.0 A 1.0 N VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 1.0 P VGS = −4.5 V, VDS = −10 V, ID = −.02 A 1.4 Gate−to−Source Charge Gate−to−Drain Charge QGS QGD http://onsemi.com 3 pF nC NTLJD3119C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr N VGS = 4.5 V, VDD = 16 V, ID = 1.0 A, RG = 2.0 W td(OFF) 4.7 11.1 tf 5.8 td(ON) 5.2 tr td(OFF) ns 3.8 VGS = −4.5 V, VDD = −10 V, ID = −2.0 A, RG = 2.0 W P tf 13.2 13.7 19.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD N P N P Reverse Recovery Time Charge Time tRR ta Reverse Recovery Charge VGS = 0 V, TJ = 125 °C IS = 1.0 A 0.69 1.0 IS = −1.0 A −0.75 −1.0 IS = 1.0 A 0.52 IS = −1.0 A −0.64 N IS = 1.0 A 10.2 P IS = −1.0 A 16.2 N IS = 1.0 A 6.0 IS = −1.0 A 10.6 IS = 1.0 A 4.2 P Discharge Time VGS = 0 V, TJ = 25 °C VGS = 0 V, dIS / dt = 100 A/ms tb N P IS = −1.0 A 5.6 QRR N IS = 1.0 A 3.0 P IS = −1.0 A 5.7 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 4 V ns nC NTLJD3119C TYPICAL PERFORMANCE CURVES − N−CHANNEL (TJ = 25°C unless otherwise noted) 10 VGS = 4 V to 2.2 V 8 2.0 V TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 10 1.8 V 6 1.6 V 4 1.4 V 2 VDS ≥ 10 V 8 6 TJ = 25°C 4 TJ = 100°C 2 1.2 V 0 0.5 1 1.5 2 2.5 3 3.5 0 4 TJ = −55°C 2.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 3.8 A 0.09 0.08 0.07 0.06 0.05 0.04 0.03 1.0 3.0 2.0 4.0 5.0 6.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.14 TJ = 25°C 0.12 VGS = 1.8 V 0.1 0.08 VGS = 2.5 V 0.06 0.04 VGS = 4.5 V 0.02 0 1 2 10000 ID = 3.8 A VGS = 4.5 V IDSS, LEAKAGE (nA) 1.2 1.1 1.0 0.9 4 5 6 7 8 9 10 Figure 4. On−Resistance versus Drain Current and Gate Voltage 1.5 1.3 3 ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Drain Current RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.1 1.4 1.5 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VGS = 0 V TJ = 150°C 1000 TJ = 100°C 0.8 0.7 −50 −25 0 25 50 75 100 125 150 100 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 5 20 NTLJD3119C VDS = 0 V TJ = 25°C Ciss 500 C, CAPACITANCE (pF) VGS = 0 V 400 300 200 Crss Coss 100 0 10 5 VGS 0 VDS 5 10 15 20 QT 4 VDS 2 QGS 0 IS, SOURCE CURRENT (AMPS) tf 10 tr td(on) 1 10 RG, GATE RESISTANCE (W) 0 4 4 1 2 3 QG, TOTAL GATE CHARGE (nC) 0 VGS = 0 V TJ = 25°C 1.5 1 0.5 0 0.4 100 8 ID = 3.8 A TJ = 25°C 2 td(off) QGD Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 100 VDD = 16 V ID = 1.0 A VGS = 4.5 V 12 VGS 1 Figure 7. Capacitance Variation t, TIME (ns) 16 3 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 1 20 5 VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) 600 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES − N−CHANNEL (TJ = 25°C unless otherwise noted) 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 6 NTLJD3119C TYPICAL PERFORMANCE CURVES − P−CHANNEL (TJ = 25°C unless otherwise noted) 5 TJ = 25°C −ID, DRAIN CURRENT (AMPS) 4.5 −1.8 V 4 3.5 −1.7 V 3 2.5 −1.6 V 2 −1.5 V 1.5 1 −1.4 V 0.5 −1.3 V −1.2 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = −1.9 V to −6 V 0 0.5 1 2 1.5 3 2.5 3.5 4 VDS ≥ 10 V 4 3 2 TJ = 25°C 1 TJ = 125°C 0 4.5 0 TJ = 100°C 0.08 TJ = 25°C 0.07 0.06 TJ = −55°C 0.05 0.04 1.0 1.5 2.5 2.0 0.15 TJ = 25°C VGS = −2.5 V 0.1 VGS = −4.5 V 0.05 0 1 10000 −IDSS, LEAKAGE (nA) 1.2 1.0 0.8 25 50 75 100 5 Figure 14. On−Resistance versus Drain Current and Gate Voltage ID = −2.2 A VGS = −4.5 V 0 4 −ID, DRAIN CURRENT (A) Figure 13. On−Resistance versus Drain Current −25 3 2 −ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 Figure 12. Transfer Characteristics 0.09 0.6 −50 2.5 Figure 11. On−Region Characteristics VGS = −4.5 V 1.4 2 1.5 −VGS, GATE−TO−SOURCE VOLTAGE (V) 0.1 1.6 TJ = −55°C 1 0.5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) 5 125 150 VGS = 0 V TJ = 150°C 1000 TJ = 100°C 100 10 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 15. On−Resistance Variation with Temperature Figure 16. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 7 20 NTLJD3119C VDS = 0 V VGS = 0 V C, CAPACITANCE (pF) 1000 TJ = 25°C Ciss 800 600 400 Crss Coss 200 0 5 VGS 0 VDS 10 5 15 20 QT 4 0 tf tr td(off) td(on) 10 RG, GATE RESISTANCE (W) 10 8 0 1 5 2 3 4 QG, TOTAL GATE CHARGE (nC) 2 1.5 1 0.5 TJ = 150°C 0.1 0.2 0.3 0.4 TJ = 25°C 0.5 0.6 0.7 0.8 0.9 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 20. Diode Forward Voltage versus Current TC = 25°C TJ = 150°C SINGLE PULSE 10 ms 100 ms 10 ms *See Note 2 on Page 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0 VGS = 0 V 1 ms 0.01 6 2.5 1 0.1 4 ID = −2.2 A TJ = 25°C 0 0 100 Figure 19. Resistive Switching Time Variation versus Gate Resistance 100 QGD Figure 18. Gate−To−Source and Drain−To−Source Voltage versus Total Charge −Is, SOURCE CURRENT (AMPS) 100 −ID, DRAIN CURRENT (AMPS) t, TIME (ns) QGS 3 VDD = −15 V ID = −2.2 A VGS = −4.5 V 12 VGS 1 1000 1 VDS 2 Figure 17. Capacitance Variation 1 16 3 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 10 20 5 −V DS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1200 −V GS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES − P−CHANNEL (TJ = 25°C unless otherwise noted) dc 10 1 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 21. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 8 100 NTLJD3119C EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1000 100 D = 0.5 0.2 0.1 10 *See Note 2 on Page 1 P(pk) 0.05 0.02 1 0.01 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 Figure 22. Thermal Response http://onsemi.com 9 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJA(t) 10 100 1000 NTLJD3119C PACKAGE DIMENSIONS WDFN6, 2x2 CASE 506AN−01 ISSUE B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 0.10 C 2X ÍÍÍ ÍÍÍ ÍÍÍ E DIM A A1 A3 b D D2 E E2 e K L J 0.10 C 2X A3 0.10 C MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.25 REF 0.20 0.30 0.15 REF A 6X 0.08 C C D2 D2 6X SOLDERMASK DEFINED MOUNTING FOOTPRINT* A1 1 2.30 6X e L SEATING PLANE 0.43 4X 6X 0.35 3 1 0.65 PITCH 2X E2 6X K 6 6X 4 b J BOTTOM VIEW 0.25 6X 0.10 C A 0.05 C B 2X NOTE 3 0.72 1.05 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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