NTHD3102C Power MOSFET Complementary, 20 V, +5.5 A /−4.2 A, ChipFETt Features • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response This is a Pb−Free Device http://onsemi.com V(BR)DSS 29 mW @ 4.5 V N−Channel 20 V 5.5 A 37 mW @ 2.5 V 48 mW @ 1.8 V Applications • • • • ID MAX (Note 1) RDS(on) TYP 64 mW @ 4.5 V DC−DC Conversion Circuits Load/Power Switching Single or Dual Cell Li−Ion Battery Supplied Devices Ideal for Power Management Applications in Portable, Battery Powered Products P−Channel −20 V −4.2 A 83 mW @ 2.5 V 105 mW @ 1.8 V S2 D1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Drain−to−Source Voltage Gate−to−Source Voltage N−Ch Value Unit VDSS 20 V VGS "8.0 V "8.0 P−Ch N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C ID TA = 85°C 2.9 t≤5s TA = 25°C 5.5 Steady State TA = 25°C TA = 85°C 2.2 t≤5s TA = 25°C 4.2 Steady State TA = 25°C ID PD Gate−to−Source ESD Rating − (Human Body Model, Method 3015) N−Channel MOSFET P−Channel MOSFET A 4.0 ChipFET CASE 1206A STYLE 2 A 3.1 MARKING DIAGRAM PIN CONNECTIONS W 1.1 2.1 ESD D2 S1 100 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq [1 oz] including traces). D1 8 1 S1 1 8 D1 7 2 G1 2 7 D2 6 3 S2 3 D2 5 4 G2 4 (Bottom View) D6 M G t≤5s G2 G1 6 5 (Top View) D6 = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 2 1 Publication Order Number: NTHD3102C/D NTHD3102C MAXIMUM RATINGS (continued) (TJ = 25°C unless otherwise noted) Parameter N−Channel Continuous Drain Current (Note 3) Steady State TA = 25°C P−Channel Continuous Drain Current (Note 3) Steady State TA = 25°C Power Dissipation (Note 3) Pulsed Drain Current N−Ch Symbol Value Unit ID 3.0 A TA = 85°C 2.2 ID A 2.3 TA = 85°C 1.7 TA = 25°C PD tp = 10 ms IDM P−Ch 0.6 W 16 A 12.6 TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 1.7 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 seconds) TL 260 °C Symbol Max Unit RqJA 110 °C/W Operating Junction and Storage Temperature THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient − Steady State (Note 2) Junction−to−Ambient − t ≤ 5 s (Note 2) 60 Junction−to−Ambient − Steady State (Note 3) 195 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol N/P Drain−to−Source Breakdown Voltage (Note 4) V(BR)DSS N Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current VGS = 0 V P IDSS IGSS ID = 250 mA 20 ID = −250 mA −20 V N 20.2 P 16.2 N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS = −16 V N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS = −16 V TJ = 25 °C TJ = 85 °C mV/°C 1.0 mA −1.0 5.0 −5.0 N VDS = 0 V, VGS = ±8.0 V ±100 P VDS = 0 V, VGS = ±8.0 V ±100 nA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 3. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq). 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTHD3102C ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) Parameter Symbol N/P VGS(TH) N Test Conditions Min Typ Max Unit V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS = VDS P Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS ID = 250 mA 0.4 1.2 ID = −250 mA −0.4 −1.2 N VGS = 4.5 V , ID = 4.4 A 29 45 P VGS = −4.5 V , ID = −3.2 A 64 80 N VGS = 2.5 V , ID = 4.1 A 37 50 P VGS = −2.5 V, ID = −2.5 A 83 110 N VGS = 1.8 V , ID = 1.9 A 48 70 P VGS = −1.8 V, ID = −0.6 A 105 150 N VDS = 10 V, ID = 4.4 A 7.7 P VDS = −10 V , ID = −3.2 A 5.9 mW S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS N VDS = 10 V 510 P VDS = −10 V 650 Output Capacitance COSS N VDS = 10 V 100 VDS = −10 V 100 N VDS = 10 V 50 P VDS = −10 V 50 P Reverse Transfer Capacitance CRSS f = 1.0 MHz, VGS = 0 V Total Gate Charge QG(TOT) N VGS = 4.5 V, VDS = 10 V, ID = 4.4 A P Threshold Gate Charge QG(TH) N Gate−to−Source Charge QGS Gate−to−Drain Charge QGD pF 5.8 7.9 VGS = −4.5 V, VDS = −10 V, ID = −3.2 A 6.6 8.9 VGS = 4.5 V, VDS = 10 V, ID = 4.4 A 0.96 P VGS = −4.5 V, VDS = −10 V, ID = −3.2 A 0.98 N VGS = 4.5 V, VDS = 10 V, ID = 4.4 A 1.2 P VGS = −4.5 V, VDS = −10 V, ID = −3.2 A 1.4 N VGS = 4.5 V, VDS = 10 V, ID = 4.4 A 1.56 P VGS = −4.5 V, VDS = −10 V, ID = −3.2 A 1.64 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr 7.2 N VGS = 4.5 V, VDD = 10 V, ID = 4.4 A, RG = 2.5 W td(OFF) 15.9 15.7 tf 4.6 td(ON) 6.4 tr td(OFF) VGS = −4.5 V, VDD = −10 V, ID = −3.2 A, RG = 2.5 W P tf 16.9 16.4 15.0 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 ns NTHD3102C ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted) Parameter Symbol N/P Test Conditions Min Typ Max Unit IS = 1.7 A 0.68 1.2 V IS = −1.7 A −0.7 −1.2 N IS = 1.7 A 13.5 P IS = −1.7 A 12.6 IS = 1.7 A 8.6 IS = −1.7 A 8.4 IS = 1.7 A 4.9 P IS = −1.7 A 4.2 N IS = 1.7 A 7.0 P IS = −1.7 A 6.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD N P Reverse Recovery Time tRR Charge Time ta N Discharge Time tb N P Reverse Recovery Charge QRR VGS = 0 V, TJ = 25 °C VGS = 0 V, dIS / dt = 100 A/ms http://onsemi.com 4 ns nC NTHD3102C TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 8 8 TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 1.6 V VGS = 8 V to 1.8 V 6 1.4 V 4 1.2 V 2 6 4 25°C 2 1.0 V 125°C 0 0 0 1 2 3 4 5 6 7 8 9 10 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.8 0.4 1.2 1.6 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.08 VGS = 4.5 V 0.06 TJ = 125°C 0.04 TJ = 25°C TJ = −55°C 0.02 2 4 6 8 ID, DRAIN CURRENT (AMPS) 10 0.08 VGS = 2.5 V TJ = 125°C 0.06 TJ = 25°C 0.04 TJ = −55°C 0.02 0 Figure 3. On−Resistance vs. Drain Current RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 2.0 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0 TJ = −55°C 2 4 6 8 ID, DRAIN CURRENT (AMPS) 10 Figure 4. On−Resistance vs. Drain Current and Temperature 0.044 1.6 VGS = 2.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 0.036 VGS = 4.5 V 0.028 0.02 0 2 4 8 6 ID, DRAIN CURRENT (AMPS) ID = 4 A VGS = 4.5 V 1.4 1.2 1.0 0.8 0.6 −50 10 Figure 5. On−Resistance vs. Drain Current −25 75 0 25 50 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 6. On−Resistance Variation with Temperature http://onsemi.com 5 150 NTHD3102C TYPICAL N−CHANNEL PERFORMANCE CURVES 5 10 IS, SOURCE CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) (TJ = 25°C unless otherwise noted) 4 3 2 1 ID = 4.4 A TJ = 25°C 0 0 2 4 6 1 TJ = 125°C TJ = 25°C 0.1 0.01 8 0 0.2 Qg, TOTAL GATE CHARGE (nC) 0.4 0.8 0.6 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current 100 0.2 ID = 250 mA 0.1 t, TIME (ns) 0 −0.1 tr td(off) tf td(on) 10 −0.2 VDS = 10 V ID = 4.4 A VGS = 4.5 V −0.3 −0.4 −50 1 −25 0 25 75 50 100 125 150 1 10 100 TJ, JUNCTION TEMPERATURE (°C) RG, GATE RESISTANCE (OHMS) Figure 9. Threshold Voltage Figure 10. Resistive Switching Time Variation vs. Gate Resistance 1000 TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) VGS(th), THRESHOLD VARIANCE (V) VGS = 0 V TJ = 25°C 800 CISS 600 400 COSS 200 CRSS 0 0 5 10 15 20 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Capacitance Variation http://onsemi.com 6 NTHD3102C TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 8 TJ = 25°C VGS = −8 V to −4 V −2 V −1.8 V −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 8 6 −1.6 V 4 −1.4 V 2 −1.2 V 6 4 2 25°C −1.0 V 125°C 0 0 0 1 2 3 4 5 6 7 8 9 10 0.8 2.8 0.4 1.2 1.6 2.0 2.4 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 13. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 12. On−Region Characteristics 0.1 VGS = −4.5 V TJ = 125°C 0.09 0.08 0.07 TJ = 25°C 0.06 TJ = −55°C 0.05 0.04 0 2 8 4 6 −ID, DRAIN CURRENT (AMPS) 10 0.16 VGS = −2.5 V 0.14 TJ = 125°C 0.12 0.10 TJ = 25°C 0.08 TJ = −55°C 0.06 0.04 0 Figure 14. On−Resistance vs. Drain Current 2 6 8 4 −ID, DRAIN CURRENT (AMPS) 10 Figure 15. On−Resistance vs. Drain Current and Temperature 0.1 1.6 TJ = 25°C VGS = −2.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = −55°C 0.09 0.08 0.07 VGS = −4.5 V 0.06 0.05 0.04 0 2 4 8 6 −ID, DRAIN CURRENT (AMPS) ID = −4 A VGS = −4.5 V 1.4 1.2 1.0 0.8 0.6 −50 10 Figure 16. On−Resistance vs. Drain Current −25 0 25 50 100 125 75 TJ, JUNCTION TEMPERATURE (°C) Figure 17. On−Resistance Variation with Temperature http://onsemi.com 7 150 NTHD3102C TYPICAL P−CHANNEL PERFORMANCE CURVES 5 10 −IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) (TJ = 25°C unless otherwise noted) 4 3 2 1 ID = −3.2 A TJ = 25°C 0 0 2 4 6 1 TJ = 125°C TJ = 25°C 0.1 0.01 0.2 8 Qg, TOTAL GATE CHARGE (nC) 0.4 0.6 0.8 1.0 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 18. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 19. Diode Forward Voltage vs. Current 100 0.2 ID = −250 mA 0.1 tr t, TIME (ns) 0 −0.1 td(off) tf 10 td(on) −0.2 VDS = −10 V ID = −4.2 A VGS = −4.5 V −0.3 −0.4 −50 1 −25 0 25 75 50 100 150 125 1 10 100 TJ, JUNCTION TEMPERATURE (°C) RG, GATE RESISTANCE (OHMS) Figure 20. Threshold Voltage Figure 21. Resistive Switching Time Variation vs. Gate Resistance 800 TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) −VGS(th), THRESHOLD VARIANCE (V) VGS = 0 V TJ = 25°C 600 CISS 400 200 COSS CRSS 0 0 4 8 12 16 20 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 22. Capacitance Variation http://onsemi.com 8 NTHD3102C TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 Notes: PDM 0.2 t1 0.1 t2 0.1 t1 1. Duty Cycle, D = t 2 2. Per Unit Base = RthJA = 90°C/W 0.05 0.02 0.01 10−4 3. TJM − TA = PDMZqJA(t) 4. Surface Mounted Single Pulse 10−3 10−2 10 −1 1 Square Wave Pulse Duration (sec) 10 100 600 Figure 23. Thermal Response ORDERING INFORMATION Device NTHD3102CT1G Package Shipping† ChipFET (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 9 NTHD3102C PACKAGE DIMENSIONS ChipFET] CASE 1206A−03 ISSUE G D 8 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. q 6 L 5 HE 5 6 7 8 4 3 2 1 E 1 2 3 e1 4 b c e STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. A SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 DIM A b c D E e e1 L HE q MILLIMETERS NOM MAX 1.05 1.10 0.30 0.35 0.15 0.20 3.05 3.10 1.65 1.70 0.65 BSC 0.55 BSC 0.28 0.35 0.42 1.80 1.90 2.00 5° NOM INCHES NOM 0.041 0.012 0.006 0.120 0.065 0.025 BSC 0.022 BSC 0.011 0.014 0.071 0.075 5° NOM MIN 1.00 0.25 0.10 2.95 1.55 MIN 0.039 0.010 0.004 0.116 0.061 MAX 0.043 0.014 0.008 0.122 0.067 0.017 0.079 0.05 (0.002) SOLDERING FOOTPRINT* 2.032 0.08 2.032 0.08 0.457 0.018 0.635 0.025 1.092 0.043 0.635 0.025 0.178 0.007 0.457 0.018 0.711 0.028 0.66 0.026 SCALE 20:1 ǒ mm inches Ǔ 0.66 0.026 Basic 0.254 0.010 SCALE 20:1 Style 2 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 10 mm Ǔ ǒinches NTHD3102C ChipFET is a trademark of Vishay Siliconix. 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