WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable *SOT-23 Package - 20 VOLTAGE 2 SOURCE 3 1 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unite Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS +12 - V ID -3 A Pulsed Drain Current (2) IDM -11 A Drain-Source Diode Forward Current (1) IS -1.25 A Power Dissipation (1) PD 1.25 W R θ JA 100 C/W TJ, Tstg -55 to 150 C Continuous Drain Current (TJ =125 C) (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Device Marking WT2307=S07 WEITRON http://www.weitron.com.tw WT-2307 Electrical Characteristics (TA=25 C Unless otherwise noted) Symbol Min Typ V(BR)DSS -20 - - V VGS (th) -0.5 -0.8 -1.5 V Gate-Source Leakage Current +10V VDS=0V, VGS=- IGSS - - +100 - nA Zero Gate Voltage Drain Current VDS=-16V, VGS=0V IDSS - - 1 uA - 70 85 80 100 ID(on) -15 - - A gfs 4 - - S Ciss - 586 - Coss - 101 - Crss - 59 - Turn-On Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 Ω ,RGEN =6Ω td(on) - 6.5 - nS Rise Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 Ω ,RGEN =6Ω tr - 32.1 - nS Turn-Off Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 Ω ,RGEN =6Ω td(off ) - 58.4 - nS Fall Time VGS =-4.5V,VDD =-10V, I D =-1A, R L =10 Ω ,RGEN =6Ω tf - 48 - nS Total Gate Charge VDS=-10V, ID=-3A, V GS =-4.5V Qg - 5.92 - nc Qgs - 1.36 - nc Qgd - 1.4 - nc VSD - -1.815 -1.2 V Characteristic Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Drain-Source On-Resistance VGS=-4.5V, ID=-4.0A VGS=-2.5V, ID=-2.0A On-State Drain Current VDS=-5V, VGS=-4.5A Forward Transconductance VDS=-5V, ID=-5A rDS (on) mΩ Dynamic (3) Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=-15V, VGS=0V, f=1MHZ PF Switching (3) Gate-Source Charge VDS=-10V, ID=-3A, V GS =-4.5V Gate-Drain Charge VDS=-10V, ID=-3A, V GS =-4.5V Drain-Source Diode Forward Voltage VDS=0V, IS=-1.25A Note: 1. Surface Mounted on FR4 Board t < _ 10sec. < _ _ 2%. 2. Pulse Test : PW 300us, Duty Cycle < 2. Guaranteed by Design, not Subject to Production Testing. WEITRON http://www.weitron.com.tw WT-2307 Typical Electrical Characteristics 25 10 -55 C 25 C 8 -ID , DRAIN CURRENT(A) -ID , DRAIN CURRENT(A) -VGS =2.5V -VGS =10.5~3.5V 6 4 -VGS =1.5V 2 20 Tj =125 C 15 10 5 0 0 0 4 6 8 10 0.0 12 2.2 800 Ciss 600 400 200 Coss Crss 10 15 20 25 30 -VGS , GATE-TO-SOURCE VOLTAGE(V) FIG.3 Capacitance WEITRON http://www.weitron.com.tw R DS(ON) , ON-RESISTANCE(OHMS) -C ,CAPACITANCE( P F) 1000 5 1.5 2 3 2.5 FIG.2 Transfer Characteristics FIG.1 Output Characteristics 0 1 -VGS , GATE-TO-SOURCE VOLTAGE(V) -VDS , DRAIN-TO-SOURCE VOLTAGE(V) 0 0.5 1.8 -VGS =-4.5V I D =-4A 1.4 1.0 0.6 0.2 0 -50 -25 0 25 50 75 100 125 Tj ( C) FIG.4 On-Resistance Variation with Temperature VDS =VGS ID =250uA 1.2 1.1 BVDSS ,NORMALIZED 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 T j ,JUNCTION TEMPERATURE( C) DRAIN-SOURCE BREAKDOWN VOLTAGE 1.3 1.10 IS ,SOURCE-DRAIN CURRENT(A) GATE-SOURCE THRESHOLD VOLTAGE Vth ,NORMALIZED WT-2307 20 gFS ,TRANSCONDUCTANCE(S) FIG.5 with Temperature 12 10 8 6 4 2 VDS =-5V 0 0 5 10 15 20 1.04 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 T j ,JUNCTION TEMPERATURE( C) FIG.6 Breakdown Voltage Variation with Temperature 10 2 TJ=25 C 0 0.8 25 1.0 1.2 1.4 1.6 1.8 V SD ,BODY DIODE FORWARD VOLTAGE(V) IDS ,DRAIN-SOURCE CURRENT(A) FIG.8 Body Diode Forward Voltage Variation with Source Current FIG.7 Transconductance Variation with Drain Current 50 5 VDS =10V ID =3A 4 -ID , DRAIN CURRENT(A) -VGS ,GATE TO SOURCE VOLTAGE(V) ID =250uA 1.07 3 2 1 10 0 1 2 3 4 5 6 7 8 R 10 0m s 10 0m s 11 0.1 0.03 0 mit )Li (ON DS DC Is VDS=-4.5V Single Pulse TC =25 C 0.1 1 10 20 50 Q g ,TOTAL GATE CHARGE(nC) VDS ,DRAIN-SOURCE CURRENT(V) FIG.9 Gate Charge FIG.10 Maximum Safe Operating Area WEITRON http://www.weitron.com.tw WT-2307 ton V DD 5 D tf 90% 90% RL V IN toff td(off) tr td(on) V OUT V OUT INVE R TE D 10% 10% VG S R GE N 90% G V IN S 50% 50% 10% P ULS E WIDTH FIG.12 Switching Waveforms FIG.11 Switching Test Circuit THERMAL RESISTANCE NORMALIZED TRANSIENT 10 1 0.5 P DM 0.2 0.1 t1 0.1 0.05 0.02 on Single Pulse 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 1 1. Rthja (t)=r (t) * R thja 2. Rth ja=See Datasheet 3. Tjm-TA = Pdm* R th ja (t) 4. Duty Cycle, D=t1/t2 10 SQUARE WAVE PULSE DURATION(SEC) NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE WEITRON http://www.weitron.com.tw t2 100 1000 WT-2307 SOT-23 Package Outline Dimensions Unit:mm A B T OP V IE W E G Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M