WEITRON WTL2622

WTL2622
Dual N-Channel Enhancement
Mode MOSFET
6 DRAIN
DRAIN CURRENT
2.5 AMPERES
P b Lead(Pb)-Free
DRAIN SOURCE VOLTAGE
20 VOLTAGE
1 GATE
2 SOURCE
Features:
6
4 DRAIN
*Super High Dense Cell Design For Low RDS(ON)
RDS(ON) < 80mΩ@VGS=4.5V
*Rugged and Reliable
*Capable of 2.5V Gate Drive
*Simple Drive Requirement
*SOT-26 Package
1
2
5
4
3
SOT-26
3 GATE
5 SOURCE
Maximum Ratings (TA=25˚C Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±10
ID
2.5
IDM
8
Drain-Source Diode Forward Current1
IS
1.25
Total Power Dissipation1 (TA=25˚C)
PD
1
W
Maximum Junction-ambient1
RθJA
125
˚C/W
Operating Junction and Storage Temperature Range
TJ,Tstg
-55~+150
˚C
Continuous Drain Current1, [email protected], TA=25˚C
-Pulsed2
Unit
V
A
Device Marking
WTL2622=STS2622
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19-Sep-05
WTL2622
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ3
Max
Unit
BVDSS
20
-
-
V
IDSS
-
-
1
μA
IGSS
-
-
±100
nA
VGS(Th)
0.5
0.8
1.5
V
RDS(on)
-
65
90
80
110
mΩ
ID(ON)
6
-
-
A
gfs
-
7
-
S
Input Capacitance
VGS=0V,VDS=10V,f=1.0MHz
Ciss
-
220
-
Output Capacitance
VGS=0V,VDS=10V,f=1.0MHz
Coss
-
67
-
Reverse Transfer Capacitance
VGS=0V,VDS=10V,f=1.0MHz
Crss
-
50
-
OFF Characteristics
Drain-Source Breakdown Voltage
VGS=0,ID=250μA
Drain-SourceLeakage Current
VDS=16V,VGS=0V
Gate-Source Leakage current
VGS=±10V, VDS=0V
ON Characteristics2
Gate-Source Threshold Voltage
VDS=VGS,ID=250μA
Drain-SourceOn-Resistance
VGS=4.5V,I D=2.5A
VGS=2.5V,ID=2.0A
On-State Drain Current
VDS=5V,VGS=4.5V
Forward Transconductance
VDS=5V,I D=2.5A
Dynamic Characteristics3
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pF
19-Sep-05
WTL2622
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ3
Max
Turn-on Delay Time2
VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω
td(on)
-
10.2
-
Rise Time
VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω
tr
-
8.3
-
Turn-off Delay Time
VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω
td(off)
-
13.5
-
Fall Time
VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω
tf
-
12.7
-
Total Gate Charge2
VDS=10V,VGS=4.5V,I D=2.5A
Qg
-
4
-
Gate-Source Charge
VDS=10V,VGS=4.5V,I D=2.5A
Qgs
-
1.5
-
Gate-Source Change
VDS=10V,VGS=4.5V,I D=2.5A
Qgd
-
0.7
-
VSD
-
0.84
1.2
Unit
Switching Characteristics3
ns
nC
Source-Drain Diode Characteristics2
Forward On Voltage
VGS=0V,IS=1.25A
V
Note: 1. Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec.
2. Pulse Test : Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Guaranteed by design, not subject to production testing.
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19-Sep-05
WTL2622
15
20
VGS=10V
VGS=4.5V
16
12
12
8
VGS=2V
4
0
-55 C
VGS=3V
ID, Drain Current (A)
ID, Drain Current(A)
25 C
VGS=4V
0
1
0.5
1.5
2
2.5
6
3
0
0.0
3
VDS, Drain-to-Source Voltage (V)
2.2
RDS(ON), On-Resistance
Normalized
C, Capacitance (pF)
300
Ciss
Coss
Crss
0
5
10
15
20
25
0.6
0.2
-50
-25
0
25
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.0
0.9
0.8
0.7
0
25
50
75
100 125
Fig.5 Gate Threshold Voltage Variation
with Temperature
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100
125
1.3
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75
100 125
Tj, Junction Temperature (˚C)
Tj, Junction Temperature (˚C)
WEITRON
75
Fig.4 On-Resistance Variation with
Temperature
VDS=VGS
ID=250uA
-25
50
Tj (˚C)
1.1
0.6
-50
3.6
1.0
0
30
Fig.3 Capacitance with Drain to Source
Voltage
1.2
3.0
1.4
VDS, Drain-to Source Voltage (V)
1.3
2.4
1.8
VGS=4.5V
ID=2.5A
1.8
400
0
1.2
Fig.2 Transfer Characteristics
500
100
0.6
VGS, Gate-to-Source Voltage (V)
Fig.1 Output Characteristics
200
Tj=125 C
9
Fig.6 Breakdown Voltage Variation
with Temperature
4/6
19-Sep-05
20
10
10
Is, Source-drain current (A)
12
8
6
4
2
0
VDS=5V
0
3
6
9
12
1
TJ=25˚C
0
0.4
15
0.8
1.2
1.6
2.0
2.4
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Fig.7 Transconductance Variation
with Drain Current
Fig.8 Body Diode Forward Voltage
Variation with Source Current
5
50
VDS=4.5V
ID=2.5A
4
10
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
gFS, Transconductance (S)
WTL2622
3
2
1
RD
0.7 1.4
2.1
2.8
3.5
4.2
4.9
)L
im
it
10
10
1
0m
ms
s
1s
DC
0.1
0
0
ON
S(
0.03
0.1
5.6
Qg, Total Gate Charge (nC)
VGS=4.5V
Single Pulse
Tc=25˚C
1
10
20
50
VDS, Drain-Source Voltage (V)
Fig.10 Maximum Safe Operating Area
Fig.9 Gate Charge
V DD
ton
V IN
D
tf
90%
90%
V OUT
V OUT
VGS
R GEN
toff
td(off )
tr
td(on)
RL
10%
INVERTED
10%
G
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Fig.12 Switching Waveforms
Fig.11 Switching Test Circuit
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19-Sep-05
WTL2622
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
P DM
0.1
0.1
t1
0.05
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = PDM* RθJA (t)
4. Duty Cycle, D=t1/t2
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
SOT-26 Outline Dimension
Unit:mm
A
G
SOT-26
B
C
Top View
L
E
D
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F1
H
I
Front View
F
J
K
Side View
6/6
Dim
A
B
C
D
E
F
F1
G
H
I
J
K
L
Min
Max
2.70
2.60
1.40
0.30
0.00
0˚
0.08
3.10
3.00
1.80
0.55
0.10
10˚
0.25
1.90 REF
1.20 REF
0.12 REF
0.37 REF
0.60 REF
0.95 REF
19-Sep-05