WTL2622 Dual N-Channel Enhancement Mode MOSFET 6 DRAIN DRAIN CURRENT 2.5 AMPERES P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE 20 VOLTAGE 1 GATE 2 SOURCE Features: 6 4 DRAIN *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 80mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-26 Package 1 2 5 4 3 SOT-26 3 GATE 5 SOURCE Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 ID 2.5 IDM 8 Drain-Source Diode Forward Current1 IS 1.25 Total Power Dissipation1 (TA=25˚C) PD 1 W Maximum Junction-ambient1 RθJA 125 ˚C/W Operating Junction and Storage Temperature Range TJ,Tstg -55~+150 ˚C Continuous Drain Current1, [email protected], TA=25˚C -Pulsed2 Unit V A Device Marking WTL2622=STS2622 WEITRON http:www.weitron.com.tw 1/6 19-Sep-05 WTL2622 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ3 Max Unit BVDSS 20 - - V IDSS - - 1 μA IGSS - - ±100 nA VGS(Th) 0.5 0.8 1.5 V RDS(on) - 65 90 80 110 mΩ ID(ON) 6 - - A gfs - 7 - S Input Capacitance VGS=0V,VDS=10V,f=1.0MHz Ciss - 220 - Output Capacitance VGS=0V,VDS=10V,f=1.0MHz Coss - 67 - Reverse Transfer Capacitance VGS=0V,VDS=10V,f=1.0MHz Crss - 50 - OFF Characteristics Drain-Source Breakdown Voltage VGS=0,ID=250μA Drain-SourceLeakage Current VDS=16V,VGS=0V Gate-Source Leakage current VGS=±10V, VDS=0V ON Characteristics2 Gate-Source Threshold Voltage VDS=VGS,ID=250μA Drain-SourceOn-Resistance VGS=4.5V,I D=2.5A VGS=2.5V,ID=2.0A On-State Drain Current VDS=5V,VGS=4.5V Forward Transconductance VDS=5V,I D=2.5A Dynamic Characteristics3 WEITRON http:www.weitron.com.tw 2/6 pF 19-Sep-05 WTL2622 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ3 Max Turn-on Delay Time2 VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω td(on) - 10.2 - Rise Time VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω tr - 8.3 - Turn-off Delay Time VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω td(off) - 13.5 - Fall Time VDS=10V, VGS=4.5V, ID=1A, RGEN=6Ω tf - 12.7 - Total Gate Charge2 VDS=10V,VGS=4.5V,I D=2.5A Qg - 4 - Gate-Source Charge VDS=10V,VGS=4.5V,I D=2.5A Qgs - 1.5 - Gate-Source Change VDS=10V,VGS=4.5V,I D=2.5A Qgd - 0.7 - VSD - 0.84 1.2 Unit Switching Characteristics3 ns nC Source-Drain Diode Characteristics2 Forward On Voltage VGS=0V,IS=1.25A V Note: 1. Surface mounted on 1 in2 copper pad of FR4 board, t ≤ 10sec. 2. Pulse Test : Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Guaranteed by design, not subject to production testing. WEITRON http:www.weitron.com.tw 3/6 19-Sep-05 WTL2622 15 20 VGS=10V VGS=4.5V 16 12 12 8 VGS=2V 4 0 -55 C VGS=3V ID, Drain Current (A) ID, Drain Current(A) 25 C VGS=4V 0 1 0.5 1.5 2 2.5 6 3 0 0.0 3 VDS, Drain-to-Source Voltage (V) 2.2 RDS(ON), On-Resistance Normalized C, Capacitance (pF) 300 Ciss Coss Crss 0 5 10 15 20 25 0.6 0.2 -50 -25 0 25 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.0 0.9 0.8 0.7 0 25 50 75 100 125 Fig.5 Gate Threshold Voltage Variation with Temperature http://www.weitron.com.tw 100 125 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 Tj, Junction Temperature (˚C) Tj, Junction Temperature (˚C) WEITRON 75 Fig.4 On-Resistance Variation with Temperature VDS=VGS ID=250uA -25 50 Tj (˚C) 1.1 0.6 -50 3.6 1.0 0 30 Fig.3 Capacitance with Drain to Source Voltage 1.2 3.0 1.4 VDS, Drain-to Source Voltage (V) 1.3 2.4 1.8 VGS=4.5V ID=2.5A 1.8 400 0 1.2 Fig.2 Transfer Characteristics 500 100 0.6 VGS, Gate-to-Source Voltage (V) Fig.1 Output Characteristics 200 Tj=125 C 9 Fig.6 Breakdown Voltage Variation with Temperature 4/6 19-Sep-05 20 10 10 Is, Source-drain current (A) 12 8 6 4 2 0 VDS=5V 0 3 6 9 12 1 TJ=25˚C 0 0.4 15 0.8 1.2 1.6 2.0 2.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Fig.7 Transconductance Variation with Drain Current Fig.8 Body Diode Forward Voltage Variation with Source Current 5 50 VDS=4.5V ID=2.5A 4 10 ID, Drain Current (A) VGS, Gate to Source Voltage (V) gFS, Transconductance (S) WTL2622 3 2 1 RD 0.7 1.4 2.1 2.8 3.5 4.2 4.9 )L im it 10 10 1 0m ms s 1s DC 0.1 0 0 ON S( 0.03 0.1 5.6 Qg, Total Gate Charge (nC) VGS=4.5V Single Pulse Tc=25˚C 1 10 20 50 VDS, Drain-Source Voltage (V) Fig.10 Maximum Safe Operating Area Fig.9 Gate Charge V DD ton V IN D tf 90% 90% V OUT V OUT VGS R GEN toff td(off ) tr td(on) RL 10% INVERTED 10% G 90% S V IN 50% 50% 10% PULSE WIDTH Fig.12 Switching Waveforms Fig.11 Switching Test Circuit WEITRON http://www.weitron.com.tw 5/6 19-Sep-05 WTL2622 Thermal Resistance Normalized Transient 10 1 0.5 0.2 P DM 0.1 0.1 t1 0.05 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = PDM* RθJA (t) 4. Duty Cycle, D=t1/t2 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve SOT-26 Outline Dimension Unit:mm A G SOT-26 B C Top View L E D WEITRON http://www.weitron.com.tw F1 H I Front View F J K Side View 6/6 Dim A B C D E F F1 G H I J K L Min Max 2.70 2.60 1.40 0.30 0.00 0˚ 0.08 3.10 3.00 1.80 0.55 0.10 10˚ 0.25 1.90 REF 1.20 REF 0.12 REF 0.37 REF 0.60 REF 0.95 REF 19-Sep-05