CES2303 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES D -30V , -1.9A , RDS(ON)=150m Ω (typ) @VGS=-10V. RDS(ON)=230m Ω (typ) @VGS=-4.5V. High dense cell design for low RDS(ON). Rugged and reliable. 7 SOT-23 Package. G SOT-23 D S S G ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS Ć20 V Drain Current-Continuous a b -Pulsed ID -1.9 A IDM -10 A Drain-Source Diode Forward Current a IS -1.25 A Maximum Power Dissipation a PD 1.25 W TJ, TSTG -55 to 150 C RįJA 100 C/W Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a 1 CES2303 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -1 µA Gate-Body Leakage IGSS VGS =Ć20V, VDS = 0V Ć100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -3 V Drain-Source On-State Resistance RDS(ON) OFF CHARACTERISTICS 7 -30 V ON CHARACTERISTICS b Forward Transconductance VGS = -10V, ID = -1.7A 150 200 mΩ VGS = -4.5V, ID = -1.3A 230 320 mΩ VDS = -5V, VGS = -10V ID(ON) gFS On-State Drain Current -1 VDS = -10V, ID = - 1.7A -6 A 2.4 S 230 PF 90 PF 20 PF c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =-15V, VGS = 0V f =1.0MHZ c SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) VDD = -15V, ID = -1A, VGEN = -10V, RGEN = 6 Ω tr tD(OFF) 10 20 ns 10 20 ns 20 35 ns Fall Time tf 6 20 ns Total Gate Charge Qg 6.0 10 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =-15V, ID = -1.7A, VGS =-10V 2 0.8 nC 1.5 nC CES2303 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Min Typ C Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =-1.25A VSD -1.2 Notes a.Surface Mounted on FR4 Board, t ś 5sec. b.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%. c.Guaranteed by design, not subject to production testing. 7 10 10 VGS=10,8,6V 8 -ID, Drain Current (A) -ID, Drain Current (A) 8 VGS=5V 6 VGS=4V 4 2 VGS=3V 2 4 6 8 6 4 2 Tj=125 C 0 10 -55 C 1 2 3 4 5 6 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.80 RDS(ON), Normalized RDS(ON),On-Resistance(Ohms) 400 C, Capacitance (pF) 25 C 0 0 0 300 Ciss 200 Coss 100 Crss 0 6 12 18 24 1.60 ID=-1.7A VGS=-10V 1.40 1.20 1.00 0.80 0.60 -50 -25 0 30 0 25 50 75 100 125 150 TJ, Junction Temperature( C) -VDS, Drain-to Source Voltage (V) Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 3 V 1.60 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage CES2303 VDS=VGS ID=-250ӴA 1.40 1.20 1.00 0.80 0.60 0.40 -50 -25 0 25 50 75 100 125 150 1.15 ID=250ӴA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 5 10 -Is, Source-drain current (A) gFS, Transconductance (S) 75 100 125 150 Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 4 3 2 1 VDS=-10V 1 0.1 0.01 0.001 0 0 1 2 3 0.2 4 0.8 0.6 0.4 -IDS, Drain-Source Current (A) 1.2 1.0 -VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VDS=-15V ID=-1.7A 8 -ID, Drain Current (A) VGS, Gate to Source Voltage (V) 50 25 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) 7 0 6 4 2 10 1 R 1 2 3 4 5 6 Qg, Total Gate Charge (nC) )L im 1ms it 10ms 100ms 1s DC 10 -1 10 0 ON 10 0 -2 0 ( DS TA=25 C Tj=150 C Single Pulse 10 -1 10 0 10 1 10 -VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 4 2 CES2303 VDD t on V IN D td(off) 7 tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) RL 10% INVERTED 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 102 0 D=0.5 1 Duty Cycle=0.5 0.2 10 -1 0.1 0.2 0.05 10 PDM 0.1 0.02 0.1 -2 t1 t2 t2 1. RįJA (t)=r * R(t)=r įJA (t) * RįJA 1. (t) RįJA 2. RįJA=See Datasheet 2. R įJA=See Datasheet RįJA (t)PDM* RįJA (t) 3. TJM-TA =3.P*TJMTA = 4. Duty Cycle, D=t1/t2 4. Duty Cycle, D=t1/t2 0.02 Pulse Single Single Pulse 0.01 10 PDM t1 0.05 0.01 -3 -4 10 -3-3 10 10 -2 -2 10 10 10 -1 10 -1 10 0 1 10 1 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5 10 10 2 100