STS2320 SamHop Microelectronics Corp. Oct .29 2004 V1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS(ON) Super high dense cell design for low RDS(ON). ( m W ) Max Rugged and reliable. 45@ VGS = 4.5V 20V SOT-23 package. 3.6A 65@ VGS =2.5V D SOT-23 D G S G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 10 V Drain Current-Continuous @TJ=25 C b -Pulsed ID 3.6 A IDM 14 A Drain-Source Diode Forward Current a IS 1.25 A Maximum Power Dissipation a PD 1.25 W TJ, TSTG -55 to 150 C a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RthJA 1 100 C/W STS2320 ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter Min Typ C Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS = 16V, VGS = 0V 1 uA Gate-Body Leakage IGSS VGS = 10V, VDS =0V 100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250uA 0.9 1.5 V Drain-Source On-State Resistance RDS(ON) VGS = 4.5V, ID= 3A 32 45 m-ohm VGS = 2.5V, ID= 2A 50 65 m-ohm On-State Drain Current ID(ON) gFS OFF CHARACTERISTICS 20 V ON CHARACTERISTICS b Forward Transconductance VDS = 5V, VGS = 4.5V VDS = 5V, ID =3A 0.6 10 A 8 S 641 PF 135 PF 101 PF 19.6 ns 4 ns 26 ns 15.7 ns 9.1 nC 1.4 nC 3.2 nC DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time VDS =15V, VGS = 0V f =1.0MHZ c tD(ON) tr Turn-Off Delay Time tD(OFF) Fall Time Total Gate Charge tf Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = 10V, ID = 1A, VGS = 4.5V, RL = 10 ohm RGEN = 6 ohm VDS =10V, ID = 3.5A, VGS =4.5V 2 STS2320 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =1.25A VSD 0.81 1.2 Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 20 25 C VGS=3V 20 ID, Drain Current (A) ID, Drain Current(A) 16 VGS=10,9,8,7,6,5,4V 12 8 VGS=2V 4 0 0 1 2 3 4 5 15 10 5 0 0.0 6 0.5 (Normalized) 750 Ciss 500 250 0 Coss Crss 0 5 10 15 20 25 1.5 2 2.5 3 Figure 2. Transfer Characteristics RDS(ON), On-Resistance(Ohms) 900 1 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 1150 -55 C Tj=125 C VDS, Drain-to-Source Voltage (V) C, Capacitance (pF) 5 C Min Typ Max Unit Condition Symbol 30 2.2 1.8 VGS=4.5V ID=3A 1.4 1.0 0.6 0.2 0 -50 -25 0 25 50 75 100 125 Tj( C) VDS, Drain-to Source Voltage (V) Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 3 V 1.3 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage STS2320 VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 15 10 Is, Source-drain current (A) 20 12 9 6 3 VDS=5V 10 15 20 75 100 125 1 TJ=25 C 0 0.4 25 0.6 0.8 1.0 1.2 1.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current Figure 8. Body Diode Forward Voltage Variation with Source Current 50 5 VDS=10V ID=3.5A 4 ID, Drain Current (A) gFS, Transconductance (S) VGS, Gate to Source Voltage (V) 18 5 50 Figure 6. Breakdown Voltage Variation with Temperature with Temperature 0 25 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) 0 0 3 2 1 10 RD 0 2 4 6 8 10 12 14 16 im it 10 10 0.1 DC 0m ms s 1s VGS=4.5V Single Pulse Tc=25 C 0.1 Qg, Total Gate Charge (nC) )L 11 0.03 0 ON S( 1 10 20 50 VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 4 STS2320 VDD t on 5 V IN D tf 90% 90% VOUT VOUT VGS RGEN toff td(off) tr td(on) RL 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 0.1 PDM 0.1 t1 0.05 0.02 Single Pulse 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 t2 1. RthJA (t)=r (t) * RthJA 2. RthJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 on 10 100 1000 STS2320 A L M F G J B C I H E D (TYP.) F 2.70 3.10 2.40 2.80 0.106 0.094 0.110 1.40 1.60 0.055 0.063 0.35 0.50 0.014 0.020 0 0.10 0 0.004 0.45 0.55 0.022 0.018 0.075 REF. 1.00 0.10 1.30 0.20 0.039 0.004 G I 1.90 REF. 0.122 0.051 0.008 J L 0.40 - 0.016 0.45 1.15 0.033 0.045 M 0° 10° 0° 10° 6 - STS2320 SOT-23 Tape and Reel Data SOT-23 Carrier Tape UNIT:㎜ PACKAGE SOT-23 A0 3.20 ±0.10 B0 3.00 ±0.10 K0 D0 1.33 ±0.10 ∮1.00 +0.25 D1 ∮1.50 +0.10 E 8.00 +0.30 -0.10 E1 E2 P0 P1 P2 T 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 4.00 ±0.10 2.00 ±0.05 0.20 ±0.02 SOT-23 Reel UNIT:㎜ TAPE SIZE REEL SIZE M N W W1 H K S G R V 8㎜ ∮178 ∮178 ±1 ∮60 ±1 9.00 ±0.5 12.00 ±0.5 ∮13.5 ±0.5 10.5 2.00 ±0.5 ∮10.0 5.00 18.00 7