AOD4112 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOD4112 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 20A (V GS = 10V) RDS(ON) < 9.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) UIS Tested! Rg,Ciss,Coss,Crss Tested! TO-252 D-PAK D Top View Drain Connected to G Tab Soft Recovery MOSFET: Integrated Schottky Diode S G D S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current GF TC=25°C Avalanche Current C C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Power Dissipation A TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. A IAR 25 A EAR 94 mJ 80 50 5.7 W 3.6 TJ, TSTG t ≤ 10s Steady-State Steady-State W 25 -55 to 175 Symbol A V 20 PDSM TA=70°C A ±20 ID IDM PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case B Units V 20 TC=100°C Pulsed Drain Current Maximum 30 RθJA RθJC Typ 18 44 2.4 °C Max 22 55 3 Units °C/W °C/W °C/W www.aosmd.com AOD4112 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, V GS=0V 30 0.1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=125°C VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G TJ=125°C VGS=4.5V, ID=20A VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Max 10 nA 1.65 2.5 V 7.8 9.5 11 13.5 11.5 14.5 A VGS=10V, V DS=15V, ID=20A mΩ 50 0.41 S 0.5 V 20 A 1950 pF 382 pF 162 VGS=0V, VDS=0V, f=1MHz mA 100 1620 VGS=0V, VDS=15V, f=1MHz Units V VDS=30V, V GS=0V IDSS IS Typ pF 1.2 1.8 Ω 24.7 32 nC 12.0 nC 4.0 nC Qgs Gate Source Charge Qgd Gate Drain Charge 5.6 nC tD(on) Turn-On DelayTime 6.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 19 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 36.4 VGS=10V, V DS=15V, R L=0.75Ω, RGEN=3Ω 9.3 ns 21.6 ns 5.4 ns 23 ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Rev0: Mar, 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4112 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 10V 20 ID(A) 4V ID(A) VDS=5V 25 4.5V 60 40 3.5V 15 125°C 10 20 5 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 5 1 18.0 Normalized On-Resistance VGS=4.5V 10.0 6.0 VGS=10V 2.0 3 4 VGS(Volts) Figure 2: Transfer Characteristics 5 ID=20A 1.6 VGS=10V 1.4 1.2 VGS=4.5V 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 25 ID=20A 1.0E+01 20 125°C 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 2 1.8 14.0 RDS(ON) (mΩ) 25°C TC=100°C TA=25°C 15 25°C 1.0E-01 1.0E-02 1.0E-03 -55 to 175 10 25°C 1.0E-04 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.aosmd.com AOD4112 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=15V ID=20A 2000 Capacitance (pF) 8 VGS (Volts) 6 4 2 1500 1000 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 1000 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 100 TJ(Max)=175°C TC=25°C 100 1ms DC 10ms 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 60 40 TJ(Max)=175°C TC=25°C 0.01 0.01 Power (W) 100µs 1 0.1 80 10µs RDS(ON) limited 10 ID (Amps) Coss 500 0 ZθJC Normalized Transient Thermal Resistance Ciss 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=3°C/W 100 20 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 TC=100°C TA=25°C PD 0.1 -55 to 175 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4112 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 90 TA=25°C 60 TA=125°C 30 0 0.000001 50 Power Dissipation (W) ID(A), Peak Avalanche Current 120 40 30 20 10 0 0.00001 0.0001 0.001 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 25 100 20 80 15 Power (W) Current rating ID(A) 50 10 5 60 40 20 0 0 25 50 75 100 125 150 0 0.01 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com