@vic AV8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S 1 APPLICATIONS *Class B push-pull audio amplifier *General purpose applications TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL RATING UNITS VCBO VCEO VEBO Pc Ic Tj TSTG -30 -20 -5 1 -700 150 -65 ~ +150 V V V W mA °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain(note) BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob Ic=-100µA,IE=0 Ic=-1mA,IB=0 IE=-100µA,Ic=0 VCB=-30V,IE=0 VEB=-5V,Ic=0 VCE=-1V,Ic=-1mA VCE=-1V,Ic=-150 mA VCE=-1V,Ic=-500mA Ic=-500mA,IB=-50mA Ic=500mA,IB=-50mA VCE=-1V,Ic=-10mA VCE=-10V,Ic=-50mA VCB=10V,IE=0 f=1MHz -30 -20 -5 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance 100 120 40 TYP 110 MAX UNIT -1 -100 V V V uA nA 400 -0.5 -1.2 -1.0 100 9.0 V V V MHz pF QW-R201-012,A @vic AV8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 RANK RANGE C 120-200 D 160-300 E 280-400 TYPICAL CHARACTERISTIC CURVES Fig.1 Static characteristics Fig.2 DC current Gain IB=2.0mA 0.3 IB=1.5mA 0.2 IB=1.0mA IB=0.5mA 0.1 0 0.4 0.8 1.2 1.6 2 10 1 10 0 10 0 2.0 -1 10 0 10 1 10 -1 10 3 10 0 0.2 0.4 0.6 0.8 Base-Emitter voltage (V) Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance 3 10 VBE(sat) 2 10 VCE(sat) 0 10 1 10 2 10 Ic,Collector current (mA) 3 10 2 10 1 10 0 10 0 10 1.0 3 10 VCE=10V Cob,Capacitance (pF) Current Gain-bandwidth product,f T(MHz) 3 10 -1 10 0 10 Ic,Collector current (mA) Ic=10*IB Saturation voltage (mV) 2 10 VCE=1V 1 10 Collector-Emitter voltage ( V) 4 10 1 10 Ic,Collector current (mA) VCE=1V IB=2.5mA 0.4 Fig.3 Base-Emitter on Voltage 2 10 3 10 IB=3.0mA HFE, DC current Gain Ic,Collector current (mA) 0.5 1 10 2 10 Ic,Collector current (mA) 3 10 f=1MHz IE=0 2 10 1 10 0 10 0 10 1 10 2 10 3 10 Collector-Base voltage (V) QW-R201-012,A