UTC 2SA733 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is an low frequency amplifier. 1 FEATURES *Collector-Emitter voltage: BVCBO=-50V *Collector current up to –150mA *High hFE linearity *Complimentary to 2SC945 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT VCBO VCEO VEBO Pc Ic Tj TSTG -60 -50 -5 250 -150 125 -55 ~ +150 V V V mW mA °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25°C) Collector Current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain(note) BVCBO BVCEO ICBO IEBO hFE1 Ic=-100µA, IE=0 IC=-10mA,IB=0 VCB=-40V,IE=0 VEB=-3V,Ic=0 VCE=-6V,Ic=-1mA -60 -50 Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure VCE(sat) fT Cob NF Ic=-100mA,IB=-10mA VCE=-10V,Ic=-50mA VCB=-10V,IE=0,f=1MHz Ic=-0.1mA,VCE=-6V RG=10kΩ,f=100Hz UTC TYP -100 -100 600 90 100 MAX -0.1 190 2.0 4.0 -0.3 3.0 6.0 UNISONIC TECHNOLOGIES CO. LTD UNIT V V nA nA V MHz pF dB 1 UTC 2SA733 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE R 90-180 Q 135-270 P 200-400 K 300-600 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics Fig.2 DC current Gain -100 Fig.3 Base-Emitter on Voltage 3 10 2 10 IB= -300 µA -60 IB= -250 µA IB= -200µA -40 IB= -150µA IB= -100 µA -20 IB= -50 µA 0 -4 -8 -12 -16 2 10 1 10 0 10 0 -20 Ic,Collector current (mA) H FE, DC current Gain Ic,Collector current (mA) VCE=-6V -80 -1 10 Collector-Emitter voltage ( V) 0 10 1 10 2 10 1 10 VCE=-6V 0 10 -1 10 3 10 0 Ic,Collector current (mA) 4 10 -0.4 -0.6 -0.8 -1.0 Base-Emitter voltage (V) Fig.5 Current gain-bandwidth product Fig.4 Saturation voltage -0.2 Fig.6 Collector output Capacitance 3 10 2 10 VBE(sat) 2 10 VCE(sat) 1 10 -1 10 0 10 1 10 2 10 Ic,Collector current (mA) UTC 3 10 Cob,Capacitance (pF) 3 10 Current Gain-bandwidth product,f T(MHz) Saturation voltage (MV) Ic=10*IB VCE=-6V 2 10 1 10 f=1MHz IE=0 1 10 0 10 -1 10 0 10 -1 10 0 10 1 10 Ic,Collector current (mA) 2 10 0 10 1 10 2 10 3 10 Collector-Base voltage (V) UNISONIC TECHNOLOGIES CO. LTD 2