UTC HE8051 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES *Collector current up to 1.5A *Collector-Emitter voltage up to 25 V *complimentary to UTC HE8551 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT VCBO VCEO VEBO Pc Ic Tj TSTG 40 25 6 1 1.5 150 -65 ~ +150 V V V W A °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation(Ta=25°C) Collector Current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) Parameter Symbol Test conditions MIN Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Cob Ic=100µA,IE=0 Ic=2mA,IB=0 IE=100µA,Ic=0 VCB=35V,IE=0 VEB=6V,Ic=0 VCE=1V,Ic=5mA VCE=1V,Ic=100mA VCE=1V,Ic=800mA Ic=800mA,IB=80mA Ic=800mA,IB=80mA VCE=1V,Ic=10mA VCE=10V,Ic=50mA VCB=10V,IE=0 f=1MHz 40 25 6 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance UTC 45 85 40 TYP 135 160 110 MAX UNIT 100 100 V V V nA nA 500 0.5 1.2 1.0 V V V MHz pF UNISONIC TECHNOLOGIES CO., LTD. 1 100 9.0 QW-R201-046,A UTC HE8051 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 RANK RANGE C 120-200 D 160-300 E 250-500 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 Static characteristics Fig.2 DC current Gain IB=3.0mA 3 10 IB=2.0mA 0.3 IB=1.5mA 0.2 IB=1.0mA IB=0.5mA 0.1 0 0.4 0.8 1.2 1.6 2 10 1 10 0 10 0 2.0 -1 10 0 10 1 10 0 10 3 10 0.2 0.4 0.6 0.8 1.0 Base-Emitter voltage (V) Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance Current Gain-bandwidth product,fT(MHz) VBE(sat) 3 10 2 10 VCE(sat) 0 10 1 10 2 10 Ic,Collector current (mA) 3 10 VCE=10V 2 10 1 10 0 10 0 10 1.2 3 10 Cob,Capacitance (pF) 3 10 -1 10 1 10 Ic,Collector current (mA) Ic=10*IB Saturation voltage (mV) 2 10 VCE=1V 2 10 Collector-Emitter voltage ( V) 4 10 1 10 Ic,Collector current (mA) VCE=1V IB=2.5mA 0.4 Fig.3 Base-Emitter on Voltage 3 10 HFE, DC current Gain Ic,Collector current (mA) 0.5 1 10 2 10 Ic,Collector current (mA) 3 10 f=1MHz IE=0 2 10 1 10 0 10 0 10 1 10 2 10 3 10 Collector-Base voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-046,A