UTC 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER FEATURES *Collector Dissipation Pc=1 W *3 W Output Application *Complement of 2SA928A 1 TO-92NL 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Pc Ic Tj TSTG 30 30 5 1 2 150 -55 ~ +150 V V V W A °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain(note) Base-emitter on voltage Collector-emitter saturation voltage Output capacitace Current gain bandwidth product BVCBO BVCEO BVEBO ICBO IEBO hFE VBE(on) VCE(sat) Cob fT Ic=100µA,IE=0 Ic=10mA,IB=0 IE=1mA,Ic=0 VCB=30V,IE=0 VBE=5V,Ic=0 VCE=2V,Ic=500mA VCE=2V,Ic=500mA Ic=1.5A,IB=0.03A VCB =10V, IE =0,f=1MHz VCE=2V,Ic=500mA 30 30 5 TYP MAX 100 100 320 1 2 100 30 120 UNIT V V V nA nA V V pF MHz CLASSIFICATION OF hFE RANK RANGE UTC O 100-200 UNISONIC TECHNOLOGIES Y 160-320 CO., LTD. 1 QW-R211-008,A UTC 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTIC CURVES FIG.1 STATIC CHARACTERISTIC FIG.2 BASE-EMITTER ON VLOTAGE 1400 IC (mA),COLLECTOR CURRENT IB=7mA 1200 IB=6mA 1000 IB=5mA 800 IB=4mA 600 IB=3mA 400 IB=2mA 200 IB=1mA 0 0 2 4 6 8 10 12 VCE(V),COLLECTOR-EMITTER 14 hFE DC CURRENT GAIN 500 VCE=2V 100 50 30 10 10 30 100 300 1000 3000 400 200 0 0.4 0.6 0.8 VBE(V),BASE-EMITTER 1.0 1.2 3 1 0.5 Ic=50lB Ta=25°C 0.3 0.1 0.05 0.03 0.01 1 3 10 30 100 300 1000 Ic(mA),COLLECTOR CURRENT FIG.5 POWER DERATING FIG.6 SAFE OPERATING AREA 1.0 0.8 0.6 0.4 0.2 0 20 40 60 80 100 120 140 Ta(°C),AMBIENT TEMPERATURE UTC 1.4 VOLTAGE Ic(mA),COLLECTOR CURRENT 1.2 0 600 0 0.2 ID (mA),COLLECTOR CURRENT PD (W),POWER DISSIPATION 3 800 FIG.4 COLLECTOR-EMITTER SATURATION VOLTAGE 1000 1 VCE=2V 1000 VOLTAGE FIG.3 DC CURRENT GAIN 300 1200 16 VCE(sat)(V),SATURATION VOLTAGE IC (mA),COLLECTOR CURRENT 1400 160 5 3 3000 Ic(MAX) PULSE Ic(MAX) 1 1ms Ta=25°C D.C OPERATION 0.5 0.3 1s 0.1 0.05 0.03 0.01 VCEO MAX 0.1 0.3 0.5 1 3 5 10 30 50 100 VCE(V), COLLECTOR EMITTER VOLTAGE UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R211-008,A