AWT6168 GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control ADVANCED PRODUCT INFORMATION - REV 0.1 FEATURES PRODUCT DESCRIPTION • Internal Reference Voltage • Integrated Power Control Scheme • InGaP HBT Technology • ESD Protection on All Pins (2.5 kV) • Low profile 1.3 mm • Small Package Outline 7 mm x 7 mm • EGPRS Capable (class 12) GMSK MODE • Integrated power control (CMOS) • +35 dBm GSM850/900 Output Power • +33 dBm DCS/PCS Output Power • 55 % GSM850/900 PAE • 50 % DCS/PCS PAE • Power control range > 50 dB EDGE MODE • +30.5 dBm GSM850/900 Output Power • +29.5 dBm DCS/PCS Output Power • 25 % GSM850/900 PAE • 25 % DCS/PCS PAE This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifier’s power control range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. All of the RF ports for this device are internally matched to 50 Ω . Internal DC blocks are provided at the RF inputs. APPLICATIONS • GSM850/GSM900/DCS/PCS Handsets • Dual/Tri/Quad Band PDA • GMSK and 8-PSK Polar Modulation Schemes DCS/PCS_IN DCS/PCS BS TX_EN DCS/PCS_OUT Bias/Power Control VBATT CEXT VRAMP GSM850/900_IN GSM850/900_OUT GSM850/900 Figure 1: Block Diagram 01/2005 AWT6168 BS GND 1 VCC2 DCS/PCS_IN 18 17 16 DCS/PCS_OUT 2 15 GND TX_EN 3 14 GND VBATT 4 13 VCC_OUT CEXT 5 12 GND VRAMP 6 11 GND GSM_IN 7 10 GSM_OUT 9 VCC2 GND 8 Figure 2: Pinout (X - ray Top View) Table 1: Pin Description PIN 1 2 NAME DESCRIPTION PIN NAME 10 GSM_OUT Band Select Logic Input 11 GND Ground TX Enable Logic Input 12 GND Ground DCS/PCS_IN DCS/PCS RF Input DESCRIPTION GSM850/900 RF Output 2 BS 3 TX_EN 4 VBATT Battery Supply Connection 13 VCC_OUT 5 C EXT Bypass 14 GND Ground 6 VRAMP Analog Signal used to control the output power 15 GND Ground 7 GSM_IN GSM850/900 RF Input 16 8 VCC2 VCC Control Input for GSM850/900 Pre-amplifier 17 GND Ground 9 GND Ground 18 VCC2 VCC Control Input for DCS/PCS Pre-amplifier Control Voltage Output which must be connected to VCC2, no decoupling DCS/PCS_OUT DCS/PCS RF Output ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6168 ELECTRICAL CHARACTERISTICS Table 2: Absolute Maximum Ratings PARAMETER MIN MAX UNITS Supply Voltage (VBATT) - +7 V RF Input Power (RFIN) - 11 dB m Control Voltage (VRAMP) -0.3 1.8 V Storage Temperature (TSTG) -55 150 °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: ESD Ratings PARAMETER METHOD RATING UNIT ESD Threshold voltage (RF ports) HBM >2.5 kV ESD Threshold voltage (control inputs) HBM >2.5 kV Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during Ω, handling and mounting. Human body model HBM employed is resistance = 1500Ω capacitance = 100pF. ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 3 AWT6168 Table 4: Operating Conditions PARAMETER MIN TYP MAX UNITS Case temperature (TC) -20 - 85 °C Supply voltage (VBATT) 3.0 3.5 4.8 V - 1 5 mA 0.2 - 1.6 V Turn on Time (TON) - - 1 ms VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dBm Turn Off Time (TOFF) - - 1 ms VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dBm Rise Time (TRISE) - - 1 ms POUT = -10 dBm Y PMAX (within 0.2 dB) Fall Time (TFALL) - - 1 ms POUT = PMAX Y -10 dBm (within 0.2 dB) VRAMP Input Capacitance - 3 - pF VRAMP Input Current - - 10 mA Duty Cycle - - 50 % Power supply leakage current Control Voltage Range COMMENTS VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW No RF applied The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Table 5: Digital Inputs PARAMETER SYMBOL MIN TYP MAX UNITS Logic High Voltage VIH 1.2 - 3.0 V Logic Low Voltage VIL - - 0.5 V Logic High Current |IIH| - - 30 mA Logic Low Current |IIL| - - 30 mA Table 6: Logic Control Table OPERATIONAL MODE BS T X _E N GSM850/900 LOW HIGH DCS/PCS HIGH HIGH - LOW PA DISABLED 4 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6168 Table 7: Electrical Characteristics for GSM850/900 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, MODE = LOW PARAMETER MIN TYP MAX UNIT 824 880 - 849 915 MHz 3 5 8 dB m Output Power, PMAX 34.5 35 - dB m Freq = 824 to 915 MHz Degraded Output Power 32.0 32.5 - dB m VBATT = 3.0 V, TC = 85 °C PIN = 3 dBm PAE @ PMAX - 55 - % Forward Isolation 1 - -37 - dB m TX_EN = LOW, PIN = 8 dBm Forward Isolation 2 - -25 - dB m TX_EN = HIGH,VRAMP = 0.2V, PIN = 8 dBm Cross Isolation (2Fo @ DCS/PCS port) - -25 - dB m VRAMP =0.2V to VRAMP_MAX Second Harmonic - -20 - dB m Over all output power levels Third Harmonic - -30 - dB m Over all output power levels Operating Frequency ( Fo ) Input Power COMMENTS Freq = 824 to 915 MHz VSWR = 8:1 All Phases , POUT < 34.5 dBm Stability Ruggedness RX Noise Power Input Return Loss - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz 10:1 - - - - -86 - dB m FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894 MHz, POUT < 34.5 dBm - -80 - dB m FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.5 dBm - -86 - dB m FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.5 dBm - - 2.5:1 VSWR All Load Phases Over all output power levels ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 5 AWT6168 Table 8: Electrical Characteristics for GSM850/900 EDGE mode µs, Duty 25% ZIN Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, VRAMP = 1.6 V, Pulse Width =1154µ = ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, MODE = HIGH PARAMETER MIN TYP MAX UNIT 824 880 - 849 915 MHz PAE @ 30.5 dBm - 25 - % Dynamic Range - 55 - dB Gain Slope - - 300 dB/V AM - PM / S21 Phase Deviation - 2.39 2.78 3.34 2.89 1.74 1.84 2.49 - Cross Isolation (2Fo @ DCS/PCS port) - -25 - dB m Second Harmonic - -20 - dB m Over all output power levels Third Harmonic - -30 - dB m Over all output power levels Operating Frequency ( Fo ) COMMENTS VRAMP = 0.2 V to 1.6 V POUT / 5 dBm <5 dBm +5 dBm +10 dBm deg/dB +15 dBm +20 dBm +25 dBm +30 dBm VSWR = 8:1 All Phases, POUT < 30.5 dBm Stability RX Noise Power Input Return Loss 6 - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz - -86 - dB m FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894MHz, POUT < 30.5 dBm - -80 - dB m FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 30.5 dBm - -86 - dB m FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 30.5 dBm - - 2.5:1 VSWR ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6168 Table 9: Electrical Characteristics for DCS/PCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, Pulse Width =1154 µs, Duty 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, MODE =LOW PARAMETER MIN TYP MAX UNIT Operating Frequency 1710 1850 - 1785 1910 MHz Input Power 3 5 8 dB m Output Power, PMAX 32 33 - dB m 29.5 30.5 - dB m VBATT = 3.0 V, TC = 85 °C PIN = 3 dBm PAE @ PMAX - 50 - % Freq = 1710 to 1910 MHz Forward Isolation 1 - -37 - dB m TX_EN = LOW, PIN = 8 dBm Forward Isolation 2 - -17 - dB m TX_EN =HIGH, VRAMP = 0.2 V, PIN = 8 dBm Second Harmonic - -20 - dB m Over all output power levels Third Harmonic - -30 - dB m Over all output power levels Degraded Output Power COMMENTS VSWR = 8:1 All Phases , POUT < 32dBm Stability Ruggedness - - -36 dB m FOUT < 1 GHz - - -30 dB m FOUT > 1 GHz 10:1 - - - - -80 - dB m FTX = 1785 MHz, RBW = 100 kHz, FRX =1805 to 1880 MHz, POUT < 32 dBm - -80 - dB m FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to 1990 MHz, POUT < 32 dBm - - 2.5:1 VSWR RX Noise Power Input Return Loss All Load Phases Over all output power levels ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 7 AWT6168 Table 10: Electrical Characteristics for DCS/PCS EDGE mode µs, Duty 25%, Unless otherwise specified: VBATT = 3.5 V, PIN = 5 dBm, VRAMP = 1.6 V, Pulse Width =1154µ Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, MODE = HIGH ZIN = ZOUT = 50Ω PARAMETER MIN TYP MAX UNIT 1710 1850 - 1785 1910 MHz PAE @ 29.5 dBm - 25 - % Dynamic Range - 50 - dB Gain Slope - - 300 dB/V AM - PM / S21 Phase Deviation - 1.92 1.65 2.54 2.31 1.66 1.61 1.03 0.92 - Second Harmonic - -20 - dB m Over all output power levels Third Harmonic - -30 - dB m Over all output power levels Operating Frequency ( Fo ) COMMENTS VRAMP = 0.2 V to 1.6 V POUT / 0 dBm <0 dBm 0 dB m +5 dBm +10 dBm deg/dB +15 dBm +20 dBm +25 dBm +28 dBm VSWR = 8:1 All Phases, POUT < 29.5 dBm Stability - - -36 dB m - - -30 dB m FOUT > 1 GHz - -80 - dB m FTX = 1785 MHz, RBW = 100 kHz FRX = 1805 to 1880 MHz, POUT < 29.5 dBm - -80 - dB m FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to 1990 MHz, POUT < 29.5 dBm - - 2.5:1 VSWR RX Noise Power Input Return Loss 8 FOUT < 1 GHz ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6168 APPLICATION INFORMATION TX ENABLE BATTERY VOLTAGE 2 1nF ++ 1nF ++ 47uF ++ 3 4 2.7pF ** 5 22nF ** DAC OUTPUT 6 10K* 27pF* 7 GND DCS/PCS_PIN DCS/PCS_OUT BS GND TX_EN GND VBAT T AWT6168 VCC_OUT CEXT GND VRAMP GND GSM_IN GSM850/900 RF INPUT GSM_OUT 8 DCS/PCS RF OUTPUT 16 15 14 13 56pF ** 12 11 10 GSM850/900 RF OUTPUT GND BAND SELECT 1 VCC2 DCS/PCS RF INPUT 17 VCC2 18 9 * Filtering may be required to filter noise from baseband. ** This component should be placed as close to the device pin as possible. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application. Figure 3: Recommended Application Circuit ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 9 AWT6168 PACKAGE OUTLINE Figure 3: Package Outline 10 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 AWT6168 NOTES ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005 11 AWT6168 ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 ADVANCED PRODUCT INFORMATION - Rev 0.1 01/2005