AWT6280 Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control features • • • • • • • • Data Sheet - Rev 2.1 Internal Reference Voltage Integrated Power Control InGaP HBT Technology ESD Protection on All Pins (2.5 kV) Low profile 1.0 mm Small Package Outline 7 mm x 7 mm EGPRS Capable (class 12) RoHS Compliant Package, 250 oC MSL-3 AW T 628 GMSK MODE • +35 dBm GSM850/900 Output Power • +33 dBm DCS/PCS Output Power • 55 % GSM850/900 PAE • 52 % DCS/PCS PAE • Power control range > 50 dB EDGE MODE • +29 dBm GSM850/900 Output Power • +28.5 dBm DCS/PCS Output Power • 29 % GSM850/900 PAE • 30 % DCS/PCS PAE • -64 dBc Typical ACPR (400 kHz) • -74 dBc Typical ACPR (600 kHz) 0R M11 Package 18 Pin 7 mm x 7 mm x 1.0 mm Surface Mount Module APPLICATIONS • Dual/Tri/Quad Band Handsets, PDAs, and Data Devices PRODUCT DESCRIPTION This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using an open loop polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. Each amplification chain is optimized for excellent EDGE efficiency, power, and linearity in a Polar loop environment while maintaining high efficiency in the GSM/GPRS mode. The amplifier’s power control range is typically 55 dB, with the output power set by applying an analog voltage to VRAMP. All of the RF ports for this device are DC blocked and internally matched to 50 . The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. DCS/PCS_IN DCS/PCS BS TX_EN VBATT CEXT DCS/PCS_OUT Bias/Power Control VRAMP GSM850/900_IN GSM850/900_OUT GSM850/900 Figure 1: Block Diagram 11/2008 AWT6280 BS GND 1 GND DCS/PCS_IN 18 17 16 DCS/PCS_OUT 2 15 GND TX_EN 3 14 GND VBATT 4 13 N/C GND CEXT 5 12 VRAMP 6 11 GND GSM850/900_IN 7 10 GSM850/900_OUT 9 GND GND 8 Figure 2: Pinout (X - ray Top View) Table 1: Pin Description PIN NaMe 1 DCS/PCS_IN 2 BS 3 TX_EN 4 NaMe PIN DesCrIPtION DCS/PCS RF Input 10 Band Select Logic Input 11 GND Ground TX Enable Logic Input 12 GND Ground VBATT Battery Supply Connection 13 N/C No Connection. Do not ground 5 C EXT Bypass 14 GND Ground 6 VRAMP Analog Signal used to control the output power 15 GND Ground 16 DCS/PCS_OUT 7 2 DesCrIPtION GSM850/900_IN GSM850/900 RF Input GSM850/900_OUT GSM850/900 RF Output DCS/PCS RF Output 8 GND Ground 17 GND Ground 9 GND Ground 18 GND Ground Data Sheet - Rev 2.1 11/2008 AWT6280 ELECTRICAL CHARACTERISTICS Table 2: Absolute Maximum Ratings ParaMeter MIN MaX uNIts Supply Voltage (VBATT) - +7 V RF Input Power (RFIN) - 11 dBm Control Voltage (VRAMP) -0.3 1.8 V Storage Temperature (TSTG) -55 150 °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. DCS/PCS_IN >+2500 V <-2500 V 1 BS >+2500 V <-2500 V GND GND 18 17 16 DCS/PCS_OUT >+2500 V <-2500 V 2 15 GND TX_EN >+2500 V <-2500 V 3 14 GND VBATT >+2500 V <-2500 V 4 13 N/C CEXT >+2500 V <-2500 V 5 12 GND VRAMP >+2500 V <-2500 V 6 11 GND GSM850/900_IN >+2500 V <-2500 V 7 10 GSM850/900_OUT >+2500 V <-2500 V GND 8 9 GND GND Figure 3: ESD Pin Rating ELECTROSTATIC DISCHARGE SENSITIVITY The AWT6280 part was tested to determine the ESD sensitivity of each package pin with respect to ground. All the package pins were subjected to an ESD pulse event using the Human Body Model outlined in JESD22-A114C.01 in either polarity with respect to ground. The pre and post test I-V characteristics of each pin are recorded. The ratings on each pin require that it sustain the ESD event and show no degradation. Data Sheet - Rev 2.1 11/2008 3 AWT6280 Table 3: Operating Conditions ParaMeter MIN tYP MaX uNIts Case temperature (TC) -20 - 85 °C Supply voltage (VBATT) 3.0 3.5 4.8 V - 1 10 A 0.2 - 1.6 V Turn on Time (TON) - - 1 s Turn Off Time (TOFF) - - 1 s Rise Time (TRISE) - - 1 s Fall Time (TFALL) - - 1 s VRAMP Input Capacitance - 3 - pF VRAMP Input Current - - 10 Duty Cycle - - 50 Power supply leakage current Control Voltage Range COMMeNts VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW No RF applied VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dB VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dB POUT = -10 dBm Y PMAX (within 0.2 dB) POUT = PMAX Y -10 dBm (within 0.2 dB) A % The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Table 4: Digital Inputs ParaMeter sYMBOL MIN tYP MaX uNIts Logic High Voltage VIH 1.2 - 3.0 V Logic Low Voltage VIL - - 0.5 V Logic High Current |IIH| - - 30 A Logic Low Current |IIL| - - 30 A Table 5: Logic Control Table OPeratIONaL MODe Bs tX_eN GSM850/900 LOW HIGH DCS/PCS HIGH HIGH - LOW PA DISABLED 4 Data Sheet - Rev 2.1 11/2008 AWT6280 Table 6: Electrical Characteristics for GSM850 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH ParaMeter MIN tYP MaX uNIt 824 - 849 MHz 0 3 5 dBm Output Power (PMAX) 34.5 35.3 - dBm Freq = 824 to 849 MHz Degraded Output Power (POUT) 32.5 33.5 - dBm VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm 48 53 - % Forward Isolation 1 - -42 -30 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -26 -20 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Cross Isolation (2Fo, 3Fo @ DCS/PCS port) - -33 -20 dBm POUT < 34.5 dBm Second Harmonic - -23 -15 dBm POUT < 34.5 dBm Third Harmonic - -42 -20 dBm POUT < 34.5 dBm n * fo (n > 4), Fo 12.75 GHz - -30 -10 dBm POUT < 34.5 dBm Operating Frequency ( FIN ) Input Power (PIN) PAE @ PMAX COMMeNts Freq = 824 to 849 MHz VSWR = 6:1 All Phases , POUT < 34.5 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -86 -84 dBm Input Return Loss - 1.5:1 2.5:1 VSWR Data Sheet - Rev 2.1 11/2008 POUT < 34.5 dBm FTX = 849 MHz, RBW = 100 kHz, FRX = 869 to 894 MHz, POUT < 34.5 dBm POUT < 34.5 dBm 5 AWT6280 Table 7: Electrical Characteristics for GSM850 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH ParaMeter MIN tYP MaX uNIt 824 - 849 MHz Input Power 0 3 5 dBm PAE 20 28 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -38 -62 -72 -77 -34 -58 -64 -68 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +29 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +29 dBm Operating Frequency 6 ( FIN ) Data Sheet - Rev 2.1 11/2008 COMMeNts FIN = 824 to 849 MHz POUT set = +29 dBm AWT6280 Table 8: Electrical Characteristics for GSM900 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH COMMeNts MIN tYP MaX uNIt 880 - 915 MHz 0 3 5 dBm Output Power (PMAX) 34.5 35.0 - dBm Freq = 880 to 915 MHz Degraded Output Power (POUT) 32.5 33.0 - dBm VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm 50 55 - % Forward Isolation 1 - -39 -30 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -26 -20 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Cross Isolation (2Fo, 3Fo @ DCS/PCS port) - -31 -20 dBm POUT < 34.5 dBm Second Harmonic - -29 -15 dBm POUT < 34.5 dBm Third Harmonic - -39 -20 dBm POUT < 34.5 dBm n * fo (n > 4), Fo 12.75 GHz - -29 -8 dBm POUT < 34.5 dBm ParaMeter Operating Frequency ( FIN ) Input Power (PIN) PAE @ PMAX Freq = 880 to 915 MHz VSWR = 6:1 All Phases , POUT < 34.5 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles - -85 -80 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.5 dBm - -86 -85 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.5 dBm - 1.5:1 2.5:1 VSWR RX Noise Power Input Return Loss POUT < 34.5 dBm Data Sheet - Rev 2.1 11/2008 POUT < 34.5 dBm 7 AWT6280 Table 9: Electrical Characteristics for GSM900 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH ParaMeter MIN tYP MaX uNIt 880 - 915 MHz Input Power 0 3 5 dBm PAE 20 29 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -38 -64 -74 -77 -34 -58 -64 -68 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +29 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +29 dBm Operating Frequency 8 ( FIN ) Data Sheet - Rev 2.1 11/2008 COMMeNts FIN = 880 to 915 MHz POUT set = +29 dBm AWT6280 Table 10: Electrical Characteristics for DCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH MIN tYP MaX uNIt 1710 - 1785 MHz 0 3 5 dBm Output Power (PMAX) 32.0 33.2 - dBm Freq = 1710 to1785 MHz Degraded Output Power (POUT) 30.0 31.0 - dBm VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm 45 52 - % Freq = 1710 to1785 MHz Forward Isolation 1 - -37 -31 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -22 -17 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Second Harmonic - -19 -10 dBm POUT < 32.0 dBm Third Harmonic - -27 -20 dBm POUT < 32.0 dBm n * fo (n > 4), Fo 12.75 GHz - -34 -10 dBm POUT < 32.0 dBm ParaMeter Operating Frequency ( FIN ) Input Power (PIN) PAE @ PMAX COMMeNts VSWR = 6:1 All Phases , POUT < 32.0 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -86 -81 dBm Input Return Loss - 1.5:1 2.5:1 VSWR Data Sheet - Rev 2.1 11/2008 POUT < 32.0 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to1880 MHz, POUT < 32.0 dBm POUT < 32.0 dBm 9 AWT6280 Table 11: Electrical Characteristics for DCS 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH ParaMeter MIN tYP MaX uNIt 1710 - 1785 MHz Input Power 0 3 5 dBm PAE 25 30 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -38 -62 -73 -76 -34 -58 -64 -68 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +28.5 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +28.5 dBm Operating Frequency 10 ( FIN ) Data Sheet - Rev 2.1 11/2008 COMMeNts FIN = 1710 to 1785 MHz POUT set = +28.5 dBm AWT6280 Table 12: Electrical Characteristics for PCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH MIN tYP MaX uNIt 1850 - 1910 MHz 0 3 5 dBm Output Power (PMAX) 32.0 32.8 - dBm Freq = 1850 to1910 MHz Degraded Output Power (POUT) 30.0 30.5 - dBm VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm 45 52 - % Freq = 1850 to1910 MHz Forward Isolation 1 - -39 -33 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -23 -17 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Second Harmonic - -21 -12 dBm POUT < 32.0 dBm Third Harmonic - -35 -20 dBm POUT < 32.0 dBm n * fo (n > 4), Fo 12.75 GHz - -33 -10 dBm POUT < 32.0 dBm ParaMeter Operating Frequency ( FIN ) Input Power (PIN) PAE @ PMAX COMMeNts VSWR = 6:1 All Phases , POUT < 32.0 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -87 -82 dBm Input Return Loss - 1.5:1 2.5:1 VSWR Data Sheet - Rev 2.1 11/2008 POUT < 32.0 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to1990 MHz, POUT < 32.0 dBm POUT < 32.0 dBm 11 AWT6280 Table 13: Electrical Characteristics for PCS 8PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH ParaMeter MIN tYP MaX uNIt 1850 - 1910 MHz Input Power 0 3 5 dBm PAE 25 32 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -37 -63 -72 -75 -34 -58 -64 -68 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +28.5 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +28.5 dBm Operating Frequency 12 ( FIN ) Data Sheet - Rev 2.1 11/2008 COMMeNts FIN = 1850 to 1910 MHz POUT set = +28.5 dBm AWT6280 APPLICATION INFORMATION TX ENABLE BATTERY VOLTAGE 1nF ++ 1nF ++ 47uF ++ 2.7pF ** 22nF ** DAC OUTPUT 2.2k * 68pF * 2 3 4 5 6 7 DCS/PCS_IN DCS/PCS_OUT BS GND TX_EN GND VBATT aWt6280 N/C CEXT GND VRAMP GND GSM_OUT GSM_IN GND GSM850/900 RF INPUT 8 16 15 14 13 12 11 asM or FeM 10 GND BAND SELECT 1 GND DCS/PCS RF INPUT 17 GND 18 9 * Component values depends on baseband chipset used. ** This component should be placed as close to the device pin as possible. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application. Figure 4: Recommended Application Circuit Data Sheet - Rev 2.1 11/2008 13 AWT6280 Package Outline Figure 5: M11 Package Outline - 18 Pin 7 mm x 7 mm x 1.0 mm Surface Mount Module Figure 6: Branding Specification 14 Data Sheet - Rev 2.1 11/2008 AWT6280 Figure 7: Recommended PCB Layout Information Data Sheet - Rev 2.1 11/2008 15 AWT6280 ORDERING INFORMATION OrDer NuMBer teMPerature raNGe PaCKaGe DesCrIPtION COMPONeNt PaCKaGING AWT6280RM11P8 -20 °C to +85°C RoHS-compliant 18 Pin 7 mm x 7 mm x 1.0 mm Surface Mount Module Tape and Reel, 2500 pieces per reel AWT6280RM11P9 -20 °C to +85°C RoHS-compliant 18 Pin 7 mm x 7 mm x 1.0 mm Surface Mount Module Partial Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 16 Data Sheet - Rev 2.1 11/2008