AWE6159R Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control features • • • • • • • • • • Data Sheet - Rev 2.2 Internal Reference Voltage Integrated Power Control InGaP HBT Technology ESD Protection on All Pins (2.5 kV) Automatic VBATT tracking Low profile 1.0 mm Small Package Outline 5 mm x 5 mm EGPRS Capable (class 12) RoHS Compliant Package, 250 oC MSL-3 Halogen-Free AW E6 159 GMSK MODE • Integrated power control (CMOS) • +35 dBm GSM850/900 Output Power • +33 dBm DCS/PCS Output Power • 53 % GSM 850/900 PAE • 49 % DCS/PCS PAE • Power control range > 50 dB R M46 Package 11 Pin 5 mm x 5 mm x 1.0 mm Surface Mount Module EDGE MODE • +29 dBm GSM850/900 Output Power • +28.5 dBm DCS/PCS Output Power • 28% GSM850/900 PAE • 28% DCS/PCS PAE • 64 dB Typical ACPR (400 kHz) • 74 dB Typical ACPR (600 kHz) APPLICATIONS Furthermore, the power control function includes battery detection circuitry for robust ORFS transient spectrum performance at low battery voltages. PRODUCT DESCRIPTION The amplifier’s power control range is typically 55 dB, with the output power set by applying an analog voltage to V RAMP. All of the RF ports for this device are internally matched to 50 . • • Dual/Tri/Quad Band Handsets and PDAs Dual/Tri/Quad Band Wireless Data Cards This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. Each amplification chain is optimized for excellent EDGE efficiency, power, and linearity in a Polar loop environment while maintaining high efficiency in the GSM/GPRS mode. The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. 01/2012 DCS/PCS_IN DCS/PCS DCS/PCS_OUT BS TX_EN VBATT Bias/Power Control VRAMP GSM850/900_OUT GSM850/900_IN GSM850/900 Figure 1: Block Diagram AWE6159R RFIN_DCS 1 BS 2 TX_EN 3 VBATT 4 VRAMP 5 N/C 6 GND 7 RFIN_GSM 8 11 DCS_OUT 10 VCC_OUT 9 GSM_OUT GND Figure 2: Pinout (X - ray Top View) Table 1: Pin Description 2 PIN NAME DCS RF Input 7 GND Band Select Logic Input 8 RFIN_GSM GSM900 RF Input TX Enable Logic Input 9 GSM_OUT GSM900 RF Output VBATT Battery Supply Connection 10 VCC_OUT VRAMP test point Do not connect 5 VRAMP Analog Signal used to control output power 11 DCS_OUT DCS RF Output 6 N/C PIN NAME 1 RFIN_DCS 2 BS 3 TX_EN 4 DESCRIPTION No Connection Data Sheet - Rev 2.2 01/2012 DESCRIPTION Ground AWE6159R ELECTRICAL CHARACTERISTICS Table 2: Absolute Maximum Ratings(1) PARAMETER MIN MAX UNITS Supply Voltage (VBATT) - +5.5 V RF Input Power (RFIN) - 11 dBm -0.3 2.2 V Digital Inputs (Logic Voltage) TX_EN, BS, VRAMP -0.5 +3.0 V Storage Temperature (TSTG) -55 150 °C Control Voltage (VRAMP)(2) (2) Notes: (1a) No Damage or degradation assuming only one parameter at a time is set at limit with all other parameters set at nominal conditions. (1b) Functional operation is not implied under these conditions. (1c) Exposure to absolute ratings for extended periods of time may adversely affect reliability. (2) VBATT must be > logic and control voltages to prevent damage to ESD diodes. RFIN_DCS >+2500 V <-2500 V 1 BS >+2500 V <-2500 V TX_EN >+2500 V <-2500 V 2 11 DCS_OUT >+2500 V <-2500 V 10 VCC_OUT >+2500 V <-2500 V 9 GSM_OUT >+2500 V <-2500 V 3 VBATT >+2500 V <-2500 V 4 VRAMP >+2500 V <-2500 V 5 N/C 6 GND 7 RFIN_GSM >+2500 V <-2500 V 8 GND Figure 3: ESD Pin Rating ELECTROSTATIC DISCHARGE SENSITIVITY The AWE6159R part was tested to determine the ESD sensitivity of each package pin with respect to ground. All the package pins were subjected to an ESD pulse event using the Human Body Model outlined in JESD22-A114C.01 in either polarity with respect 3 to ground. The pre and post test I-V characteristics of each pin are recorded. The ratings on each pin require that it sustain the ESD event and show no degradation. Data Sheet - Rev 2.2 01/2012 AWE6159R Table 3: Operating Conditions PARAMETER MIN TYP MAX UNITS Case temperature (TC) -30 - +85 °C Supply voltage (VBATT) 3.0 3.5 4.8 V - 1 10 µA 0.2 - 1.6 V Turn on Time (TON) - - 1 µs VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dBm Turn Off Time (TOFF) - - 1 µs VRAMP = 0.2 V, TX_EN = HIGH Y LOW PIN = 5 dBm Rise Time (TRISE) - - 1 µs POUT = -10 dBm Y PMAX (within 0.2 dB) Fall Time (TFALL) - - 1 µs POUT = PMAX Y -10 dBm (within 0.2 dB) VRAMP Input Capacitance - 3 - pF VRAMP Input Current - - 10 µA Duty Cycle - - 50 % Power supply leakage current Control Voltage Range COMMENTS VBATT = 4.8 V, VRAMP = 0 V, TX_EN = LOW No RF applied The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Table 4: Digital Inputs PARAMETER SYMBOL MIN TYP MAX UNITS Logic High Voltage VIH 1.2 - 3.0 V Logic Low Voltage VIL - - 0.5 V Logic High Current |IIH| - - 30 A Logic Low Current |IIL| - - 30 A Table 5: Logic Control Table OPERATIONAL MODE BS TX_EN GSM850/900 LOW HIGH DCS/PCS HIGH HIGH - LOW PA DISABLED 4 Data Sheet - Rev 2.2 01/2012 AWE6159R Table 6: Electrical Characteristics for GSM850 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 824 - 849 MHz 0 3 5 dBm 34.5 35.2 - dBm Freq = 824 to 849 MHz Degraded Output Power (POUT) 32 32.8 - dBm VBATT = 3.0 V, TC = +85 °C PIN = 0 dBm PAE @ PMAX 48 52 - % Freq = 824 to 849 MHz Supply Current (IBATT) - 1.82 2.2 A POUT = PMAX, VRAMP = 1.6 V Forward Isolation 1 - -51 -30 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -27 -15 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Cross Isolation (2Fo @ DCS/PCS port) - -23 -15 dBm POUT < 34.5 dBm Cross Isolation (3Fo @ DCS/PCS port) - -23 -12 dBm POUT < 34.5 dBm Second Harmonic - -19 -10 dBm POUT < 34.5 dBm Third Harmonic - -24 -10 dBm POUT < 34.5 dBm n * fo (n > 4), Fo ≤ 12.75 GHz - -30 -8 dBm POUT < 34.5 dBm Operating Frequency ( FIN ) Input Power (PIN) Output Power (PMAX) COMMENTS VSWR = 6:1 All Phases Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -88 -82 dBm Input Return Loss - 1.5:1 2.5:1 VSWR 5 Data Sheet - Rev 2.2 01/2012 FTX = 849 MHz, RBW = 100 kHz, FRX = 869 to 894 MHz, POUT < 34.5 dBm POUT < 34.5 dBm AWE6159R Table 7: Electrical Characteristics for GSM850 8-PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 824 - 849 MHz Input Power 0 3 5 dBm PAE 20 28 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -37 -62 -74 -78 -34 -58 -64 -66 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +29 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +29 dBm Operating Frequency 6 ( FIN ) Data Sheet - Rev 2.2 01/2012 COMMENTS FIN = 824 to 849 MHz POUT set = +29 dBm AWE6159R Table 8: Electrical Characteristics for GSM900 GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 880 - 915 MHz 0 3 5 dBm 34.5 35 - dBm Freq = 880 to 915 MHz Degraded Output Power (POUT) 32 32.8 - dBm VBATT = 3.0 V, TC = +85 °C PIN = 0 dBm PAE @ PMAX 48 53 - % Freq = 880 to 915 MHz Supply Current (IBATT) - 1.7 2.1 A POUT = PMAX, VRAMP = 1.6 V Forward Isolation 1 - -43 -30 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -27 -15 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Cross Isolation (2Fo @ DCS/PCS port) - -20 -15 dBm POUT < 34.5 dBm Cross Isolation (3Fo @ DCS/PCS port) - -20 -12 dBm POUT < 34.5 dBm Second Harmonic - -22 -10 dBm POUT < 34.5 dBm Third Harmonic - -21 -10 dBm POUT < 34.5 dBm n * fo (n > 4), Fo ≤ 12.75 GHz - -29 -8 dBm POUT < 34.5 dBm Operating Frequency ( FIN ) Input Power (PIN) Output Power (PMAX) COMMENTS VSWR = 6:1 All Phases Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles - -87 -76 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.5 dBm - -87 -82 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.5 dBm - 1.5:1 2.5:1 VSWR RX Noise Power Input Return Loss 7 Data Sheet - Rev 2.2 01/2012 POUT < 34.5 dBm AWE6159R Table 9: Electrical Characteristics for GSM900 8-PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = LOW, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 880 - 915 MHz Input Power 0 3 5 dBm PAE 20 28 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -38 -65 -74 -78 -34 -58 -64 -66 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +29 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +29 dBm Operating Frequency 8 ( FIN ) Data Sheet - Rev 2.2 01/2012 COMMENTS FIN = 880 to 915 MHz POUT set = +29 dBm AWE6159R Table 10: Electrical Characteristics for DCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulse Width = 1154 µs Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT 1710 - 1785 MHz 0 3 5 dBm Output Power (PMAX) 32.0 33 - dBm Freq = 1710 to1785 MHz Degraded Output Power (POUT) 30.0 31.0 - dBm VBATT = 3.0 V, TC = +85 °C PIN = 0 dBm 44 48 - % Freq = 1710 to1785 MHz Supply Current (IBATT) - 1.2 1.6 A POUT = PMAX, VRAMP = 1.6 V Forward Isolation 1 - -43 -30 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -23 -15 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Second Harmonic - -17 -10 dBm POUT < 32.0 dBm Third Harmonic - -27 -15 dBm POUT < 32.0 dBm n * fo (n > 4), Fo ≤ 12.75 GHz - -34 -8 dBm POUT < 32.0 dBm Operating Frequency ( FIN ) Input Power (PIN) PAE @ PMAX COMMENTS VSWR = 6:1 All Phases Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -89 -82 dBm Input Return Loss - 1.5:1 2.5:1 VSWR 9 Data Sheet - Rev 2.2 01/2012 FTX = 1785 MHz, RBW = 100 kHz, FRX = 1805 to1880 MHz, POUT < 32.0 dBm POUT < 32.0 dBm AWE6159R Table 11: Electrical Characteristics for DCS 8-PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH MIN TYP MAX UNIT 1710 - 1785 MHz Input Power 0 3 5 dBm PAE 22 28 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -37 -64 -74 -78 -34 -58 -63 -66 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +28.5 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +28.5 dBm PARAMETER Operating Frequency 10 ( FIN ) Data Sheet - Rev 2.2 01/2012 COMMENTS FIN = 1710 to 1785 MHz POUT set = +28.5 dBm AWE6159R Table 12: Electrical Characteristics for PCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, VRAMP = 1.6 V, Pulse Width = 1154 µs Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT Operating Frequency (FIN) 1850 - 1910 MHz 0 3 5 dBm Output Power (PMAX) 32.0 33.1 - dBm Freq = 1850 to1910 MHz Degraded Output Power (POUT) 30.0 31.0 - dBm VBATT = 3.0 V, TC = +85 °C PIN = 0 dBm 45 50 - % Freq = 1850 to1910 MHz Supply Current (IBATT) - 1.2 1.5 A POUT = PMAX, VRAMP = 1.6 V Forward Isolation 1 - -42 -30 dBm TX_EN = 0 V, PIN = 5 dBm Forward Isolation 2 - -22 -15 dBm TX_EN = HIGH ,VRAMP = 0.2 V PIN = 5 dBm Second Harmonic - -19 -10 dBm POUT < 32.0 dBm Third Harmonic - -29 -15 dBm POUT < 32.0 dBm n * fo (n > 4), Fo ≤ 12.75 GHz - -33 -8 dBm POUT < 32.0 dBm Input Power (PIN) PAE @ PMAX COMMENTS VSWR = 6:1 All Phases Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation VSWR 10:1, All Phase Angles RX Noise Power - -90 -82 dBm Input Return Loss - 1.5:1 2.5:1 VSWR 11 Data Sheet - Rev 2.2 01/2012 FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to1990 MHz, POUT < 32.0 dBm POUT < 32.0 dBm AWE6159R Table 13: Electrical Characteristics for PCS 8-PSK mode Unless otherwise specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width = 1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C , BS = HIGH, TX_EN = HIGH PARAMETER MIN TYP MAX UNIT Operating Frequency (FIN) 1850 - 1910 MHz Input Power 0 3 5 dBm PAE 22 28 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -37 -64 -74 -78 -34 -58 -64 -66 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +28.5 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +28.5 dBm 12 Data Sheet - Rev 2.2 01/2012 COMMENTS FIN = 1850 to 1910 MHz POUT set = +28.5 dBm AWE6159R APPLICATION INFORMATION DCS/PCS RF INPUT 1 2 BSEL 33pF 3) TXEN VBAT RAMP 33pF 3) 47µF 3) 12pF 2) 2.2k 1) 2.7pF 2) 39 pF1) 3 4 5 6 7 GSM RF INPUT 8 DCS/PCS_IN DCS/PCS_OUT 11 Matching 4) BS ASM or FEM TX_EN VBATT VRAMP VCC_OUT 5) 10 AWE6159 N/C GND GSM_OUT GSM_IN 9 Matching 4) 1) Component values depends on baseband chipset used. 2) These components should be placed as close to the device pin as possible. 3) These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application. 4) Actual matching component values depend on PCB layout and ASM/FEM used. 5) VRAMP test point, do not connect. Figure 4: Recommended Application Circuit 13 Data Sheet - Rev 2.2 01/2012 AWE6159R Package Outline Figure 5: M46 Package Outline - 11 Pin 5 mm x 5 mm x 1.0 mm Surface Mount Module ANADIGICS logo Pin 1 Identifier Part Number Date Code YY= Year WW= Work Week Marking Code AWE6159R YYWW LLLLL-SS CC BBB Figure 6: Branding Specification Diagram 14 Data Sheet - Rev 2.2 01/2012 Lot Number Country Code AWE6159R Figure 7: Recommended PCB Layout Information 15 Data Sheet - Rev 2.2 01/2012 AWE6159R ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWE6159RM46P8 -30 °C to +85°C RoHS-compliant 11 Pin 5 mm x 5 mm x 1.0 mm Surface Mount Module Tape and Reel, 2500 pieces per reel AWE6159RM46P9 -30 °C to +85°C RoHS-compliant 11 Pin 5 mm x 5 mm x 1.0 mm Surface Mount Module Partial Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 16 Data Sheet - Rev 2.2 01/2012