140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, • 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 • 1 Power Gain, GPE = 19 dB (typ) @ 200 MHz 3 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Voltage Value 15 Unit Vdc VCBO VEBO Collector-Base Voltage 30 Vdc Emitter-Base Voltage 2.5 Vdc IC Collector Current 50 mA 200 1.14 mWatts mW/ ºC Thermal Data P D Total Device Dissipation @ TA = 25º C Derate above 25º C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. BFY90 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) Value Unit Min. Typ. Max. 15 - - Vdc - - 10 nA 20 - 125 - (on) HFE DC Current Gain (IC = 25 mAdc, VCE = 1.0 Vdc) DYNAMIC Symbol fT NFmin Cibo Test Conditions Current-Gain - Bandwidth Product (IC = 25 mAdc, VCE = 5 Vdc, f = 500 MHz) Value Unit Min. Typ. Max. 1.3 - - GHz - 2.5 5.0 dB - - 2.0 pF (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 500 MHz Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. BFY90 FUNCTIONAL Symbol G U max MSG 2 |S21| Value Test Conditions Maximum Unilateral Gain (1) Maximum Stable Gain Insertion Gain Unit Min. Typ. Max. IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz - 20 - dB IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz - 22 - dB IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz 15 16 - dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 8 mA f S11 S21 S12 S22 (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| 100 .574 -79 10.65 127 .023 67 .788 -56 200 .374 -130 7.01 105 .036 60 .682 -97 300 .292 -172 4.44 97 .047 66 .654 -136 400 .259 142 3.62 92 .063 63 .640 -178 500 .221 96 3.02 88 .072 60 .617 140 600 .198 53 2.57 80 .082 58 .614 98 700 .185 8.8 2.08 76 .087 58 .611 55 800 .187 -38 1.90 76 .104 58 .621 10 900 .185 -91 1.79 72 .117 50 .620 -35 1000 .177 -136 1.70 61 .118 44 .632 -78 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ∠φ BFY90 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.