UM4302 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The UM4302 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM4302 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 40V 15mΩ 11.6A -40V 32mΩ -8.6A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Features z Networking DC-DC Power System z CCFL Back-light Inverter z Advanced high cell density Trench technology SOP8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed D1 D1 D2 D2 z Green Device Available Absolute Maximum Ratings S1 S2 G1 G2 Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 40 -40 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 ±20 V 1 11.6 -8.6 A 1 9 -6.7 A 23 -17 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 69 76 mJ IAS Avalanche Current 25 -28.6 A 4 PD@TC=25℃ Total Power Dissipation 3.5 3.5 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 Typ. --- 85 ℃/W RθJC Thermal Resistance Junction-Case1 --- 36 ℃/W 1 UM4302 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=8A --- 12 15 VGS=4.5V , ID=6A --- 16 20 1.0 1.5 2.5 V --- -5.64 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=8A --- 20 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 4.2 Ω Qg Total Gate Charge (4.5V) --- 10.7 --- Qgs Gate-Source Charge --- 3.3 --- Qgd Gate-Drain Charge --- 4.2 --- Td(on) VDS=20V , VGS=4.5V , ID=8A nC --- 8.6 --- Rise Time VDD=12V , VGS=10V , RG=3.3Ω --- 3.4 --- Turn-Off Delay Time ID=6A --- 24.8 --- Fall Time --- 2.2 --- Ciss Input Capacitance --- 1314 --- Coss Output Capacitance --- 120 --- Crss Reverse Transfer Capacitance --- 88 --- Min. Typ. Max. Unit 45 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=20A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- 11.6 A --- --- 23 A --- --- 1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM4302 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.02 --- V/℃ VGS=-10V , ID=-6A --- 26 32 VGS=-4.5V , ID=-3A --- 38 46 -1.0 -1.6 -2.5 V --- 3.72 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-8A --- 13 --- S Qg Total Gate Charge (-4.5V) --- 11.5 --- Qgs Gate-Source Charge --- 3.5 --- Qgd Gate-Drain Charge --- 3.3 --- Td(on) VDS=-15V , VGS=-4.5V , ID=-1A nC --- 22 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 15.7 --- Turn-Off Delay Time ID=-1A --- 59 --- Fall Time --- 5.5 --- Ciss Input Capacitance --- 1415 --- Coss Output Capacitance --- 134 --- Crss Reverse Transfer Capacitance --- 102 --- Min. Typ. Max. Unit 37 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-20A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage2 2,6 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -8.6 A --- --- -17 A --- --- -1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-28.6A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 3 UM4302 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Typical Characteristics 20 12 ID=8A VGS=10V 10 VGS=7V 16 VGS=4.5V RDSON (mΩ) ID Drain Current (A) VGS=5V 8 6 12 VGS=3V 4 2 8 0 0 0.25 0.5 0.75 2 1 VDS Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 4 6 8 VGS (V) 10 Fig.2 On-Resistance vs. G-S Voltage 10 6 VGS , Gate to Source Voltage (V) IS Source Current(A) VDS=20V 4 TJ=150℃ TJ=25℃ 2 0 0.00 0.25 0.50 0.75 ID=8A 8 6 4 2 0 1.00 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 10 15 QG , Total Gate Charge (nC) 20 25 Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 5 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 4 150 UM4302 N-Ch and P-Ch Fast Switching MOSFETs 10000 100.00 F=1.0MHz 10.00 10us ID (A) 1000 100us 1.00 Coss 100 Crss 10ms 100ms DC 0.10 TC=25℃ Single Pulse 10 0.01 1 5 9 13 17 21 25 0.1 1 10 VDS Drain to Source Voltage (V) 100 1000 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area 1 Normalized Thermal Response (RθJC) Capacitance (pF) Ciss DUTY=0.5 0.2 0.1 0.1 0.05 P DM T ON T 0.02 D = TON/T TJpeak = TC+P DMXRθJC 0.01 SINGLE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Wave 5 UM4302 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Typical Characteristics 50 12 ID=-8A VGS=-10V 40 VGS=-7V 8 RDSON (mΩ) -ID Drain Current (A) 10 VGS=-5V 6 VGS=-4.5V 30 4 VGS=-3V 2 0 20 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 2 4 Fig.1 Typical Output Characteristics 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 8 10 -VGS Gate to Source Voltage (V) -IS Source Current(A) VDS=-15V 6 ID =-1A 7.5 4 TJ=150℃ 2 TJ=25℃ 2.5 0 0.2 0.4 0.6 0.8 5 0 1 0 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 10 15 20 QG , Total Gate Charge (nC) 25 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature (℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 6 150 UM4302 N-Ch and P-Ch Fast Switching MOSFETs 10000 100.00 F=1.0MHz Capacitance (pF) Ciss 10.00 1000 -ID (A) 100us 1.00 Coss 1ms 100 Crss 10ms 100ms DC 0.10 o Tc=25 C Single Pulse 0.01 10 1 5 9 13 17 21 -VDS , Drain to Source Voltage(V) 0.1 25 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 P DM T ON T 0.02 D = TON/T TJpeak = TC+P DMXRθJC 0.01 SINGLE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 7 10