TM UniFET FDP65N06 60V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 132nC) Low Crss ( typical 35pF) Fast switching Improved dv/dt capability D G TO-220 G DS FDP Series S Absolute Maximum Ratings Symbol Parameter FDP65N06 Units VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 65 A IDM Drain Current - Pulsed - Continuous (TC = 100°C) (Note 1) 41 A 260 A ± 20 V 430 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 65 A EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25°C 4.5 V/ns 135 W 1.08 W/°C -55 to +150 °C 300 °C Thermal Characteristics FDP65N06 Units RθJC Symbol Thermal Resistance, Junction-to-Case Parameter 0.92 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W ©2006 Fairchild Semiconductor Corporation FDP65N06 Rev. A1 1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET June 2006 Device Marking Device Package Reel Size Tape Width Quantity FDP65N06 FDP65N06 TO-220 -- -- 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA VDS = VGS, ID = 250 µA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 32.5 A gFS Forward Transconductance VDS = 40 V, ID = 32.5 A (Note 4) -- 0.013 0.016 Ω -- 39 -- S -- 1670 2170 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 464 600 pF -- 35 52 pF -- 24 58 ns -- 94 200 ns -- 98 210 ns -- 52 114 ns -- 33 43 nC -- 10 -- nC -- 11 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time VDD = 30 V, ID = 65A, RG = 25 Ω (Note 4, 5) tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 48 V, ID = 65A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 65 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 260 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 65 A -- -- 1.4 V trr Reverse Recovery Time -- 62 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 65 A, dIF / dt = 100 A/µs -- 132 -- nC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 47µH, IAS =65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 65A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 2 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET Package Marking and Ordering Information FDP65N06 60V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 300 o 150 C V GS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V B ottom : 5 .5 V ID, Drain Current [A] 100 ID, Drain Current [A] Top : 100 o 25 C 10 o 10 -5 5 C * N otes : 1. 250 µ s Pulse Test o 2. T C = 25 C 2 0.1 1 * N o te s : 1 . V DS = 4 0 V 2 . 2 5 0 µ s P u ls e T e s t 1 2 10 4 V D S , D rain-S ource V oltage [V ] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 100 0.12 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.14 0.10 VGS = 10V 0.08 0.06 0.04 VGS = 20V 0.02 o * Note : TJ = 25 C 0 5 10 15 10 0 150 C 0 25 C * Note : 1. VGS=0V 2. 250µs Pulse Test 1 0.2 20 ID, Drain Current [A] VGS, Gate-Source Voltage [V] Coss * Note : 1. VGS = 0 V 2. f = 1 MHz Ciss 2000 0 -1 10 Crss 1.0 1.2 1.4 10 VDS = 12V 8 VDS = 48V VDS = 30V 6 4 2 * Note : ID = 65A 0 0 10 1 0 10 10 20 30 40 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 FDP65N06 Rev. A1 0.8 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 0.6 Figure 6. Gate Charge Characteristics 4000 3000 0.4 VDS, Source-Drain Violtage [V] Figure 5. Capacitance Characteristics Capacitances [pF] 6 V G S , G a te -S o urc e V o lta ge [V ] www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 32.5 A 0.5 0.0 -100 200 -50 0 100 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3 80 10 10 µs 70 100 µs 60 ID, Drain Current [A] 2 10 ID, Drain Current [A] 50 o o 1ms 10ms 100ms DC 1 10 Operation in This Area is Limited by R DS(on) * Notes : o 1. TC = 25 C 0 10 50 40 30 20 o 2. TJ = 150 C 3. Single Pulse 10 -1 10 0 10 1 0 25 2 10 10 50 75 100 125 150 o VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 0 10 Z? JC(t), Thermal Response D=0.5 0.2 -1 0.1 10 0.05 0.02 0.01 * Notes : 0 1. ZθJC(t) = 0.92 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -2 10 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] 4 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters 7 FDP65N06 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 8 FDP65N06 Rev. A1 www.fairchildsemi.com FDP65N06 60V N-Channel MOSFET TRADEMARKS