UniFETTM FDP24N40 / FDPF24N40 N-Channel MOSFET 400V, 24A, 0.175Ω Features Description • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 46nC) • Low Crss ( Typ. 25pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant D G G D S TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP24N40 FDPF24N40 400 Units V ±30 V -Continuous (TC = 25oC) 24 24* -Continuous (TC = 100oC) 14.4 14.4* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 24 A EAR Repetitive Avalanche Energy (Note 1) 22.7 mJ dv/dt Peak Diode Recovery dv/dt - Pulsed (Note 1) 96* (Note 2) A 1296 (Note 3) mJ 4.5 V/ns (TC = 25oC) 227 40 W - Derate above 25oC 1.8 0.3 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL 96 A -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics FDP24N40 FDPF24N40 RθJC Symbol Thermal Resistance, Junction to Case Parameter 0.55 3.0 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2007 Fairchild Semiconductor Corporation FDP24N40 / FDPF24N40 Rev. A 1 Units o C/W www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET December 2007 Device Marking FDP24N40 FDPF24N40 Device FDP24N40 Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF24N40 TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units 400 - - V - 0.4 - V/oC μA Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TJ = 25oC IDSS Zero Gate Voltage Drain Current VDS = 400V, VGS = 0V - - 1 VDS = 320V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 0.140 0.175 Ω - 34 - S ID = 250μA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 12A gFS Forward Transconductance VDS = 20V, ID = 12A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 320V, ID = 24A VGS = 10V (Note 4, 5) - 2270 3020 pF - 365 490 pF - 25 38 pF - 46 60 nC - 12 - nC - 20 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 200V, ID = 24A RG = 25Ω (Note 4, 5) - 40 90 ns - 90 190 ns - 110 230 ns - 65 140 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 24 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 96 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 24A - - 1.4 V trr Reverse Recovery Time 360 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 24A dIF/dt = 100A/μs - 4.7 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4.5mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 24A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP24N40 / FDPF24N40 Rev. A 2 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 10 Figure 2. Transfer Characteristics 70 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID,Drain Current[A] ID,Drain Current[A] 50 1 10 o 150 C o 25 C o -55 C 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.2 0.1 1 VDS,Drain-Source Voltage[V] 4 8 5 6 7 VGS,Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.19 200 0.18 100 0.16 VGS = 10V VGS = 20V 0.14 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TJ = 25 C 2. 250μs Pulse Test 0.12 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 3000 Coss Ciss *Note: 1. VGS = 0V 2. f = 1MHz 2000 1000 1.4 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 4000 0.6 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 5000 Capacitances [pF] 8 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.2 0.05 Crss VDS = 100V VDS = 200V VDS = 320V 8 6 4 2 *Note: ID = 24A 0 0.1 0 1 10 VDS, Drain-Source Voltage [V] FDP24N40 / FDPF24N40 Rev. A 0 30 3 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 12A 0.5 0.0 -75 175 Figure 9. Maximum Safe Operating Area - FDP24N40 200 100 2.5 -25 25 75 125 o TJ, Junction Temperature [ C] 175 Figure 10. Maximum Drain Current vs. Case Temperature 25 10μs 20 1ms 10 ID, Drain Current [A] ID, Drain Current [A] 100μs 10ms DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 15 10 1. TC = 25 C 5 o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 800 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve - FDP24N40 Thermal Response [ZθJC] 1 0.5 0.1 0.2 t1 0.05 t2 0.02 *Notes: 0.01 0.01 o 1. ZθJC(t) = 0.55 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.003 -5 10 FDP24N40 / FDPF24N40 Rev. A PDM 0.1 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Typical Performance Characteristics (Continued) FDP24N40 / FDPF24N40 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP24N40 / FDPF24N40 Rev. A 5 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP24N40 / FDPF24N40 Rev. A 6 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Mechanical Dimensions TO-220 FDP24N40 / FDPF24N40 Rev. A 7 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP24N40 / FDPF24N40 Rev. A 8 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 FDP24N40 / FDPF24N40 Rev. A 9 www.fairchildsemi.com FDP24N40 / FDPF24N40 N-Channel MOSFET TRADEMARKS