QFET FQA8N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12pF) Fast switching 100% avalanche tested Improved dv/dt capability D G TO-3P FQA Series G DS S Absolute Maximum Ratings Symbol Parameter FQA8N90C Units VDSS Drain-Source Voltage 900 V ID Drain Current - Continuous (TC = 25°C) 8.0 A IDM Drain Current - Pulsed - Continuous (TC = 100°C) (Note 1) 5.1 A 32 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 850 mJ IAR Avalanche Current (Note 1) 8.0 A EAR Repetitive Avalanche Energy (Note 1) 24 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Derate above 25°C 4.0 V/ns 240 W 1.92 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2006 Fairchild Semiconductor Corporation FQA8N90C Rev. A1 1 Typ Max Units -- 0.52 °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com FQA8N90C 900V N-Channel MOSFET September 2006 ® Device Marking Device Package Reel Size Tape Width Quantity FQA8N90C FQA8N90C TO-3P -- -- 30 FQA8N90C FQA8N90C_F109 TO-3PN -- -- 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 900 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.95 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- -- 10 µA VDS = 720 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 1.6 1.9 Ω -- 5.5 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.0 A gFS Forward Transconductance VDS = 50 V, ID = 4.0 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1600 2080 pF -- 130 170 pF -- 12 15 pF -- 40 90 ns -- 110 230 ns -- 70 150 ns -- 70 150 ns -- 35 45 nC -- 10 -- nC -- 14 -- nC 8.0 A Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 450 V, ID = 11.0A, RG = 25 Ω (Note 4, 5) VDS = 720 V, ID = 11.0A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =8.0 A -- -- 1.4 V trr Reverse Recovery Time 530 -- ns Reverse Recovery Charge VGS = 0 V, IS = 8.0 A, dIF / dt = 100 A/µs -- Qrr -- 5.8 -- µC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 25mH, IAS =8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 8.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQA8N90C Rev. A1 2 www.fairchildsemi.com FQA8N90C 900V N-Channel MOSFET Package Marking and Ordering Information FQA8N90C 900V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 0 -55 C o 10 25 C ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250µs Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 3.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 4.0 VGS = 10V 3.0 VGS = 20V 2.5 2.0 1.5 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test ※ Note : TJ = 25℃ 1.0 -1 0 5 10 15 10 20 0.2 0.4 ID, Drain Current [A] Figure 5. Capacitance Characteristics 3000 1.2 1.4 VDS = 180V 10 Ciss 1500 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 500 1.0 12 VGS, Gate-Source Voltage [V] Capacitance [pF] 2000 0.8 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 0.6 VSD, Source-Drain voltage [V] Crss VDS = 450V VDS = 720V 8 6 4 2 ※ Note : ID = 8A 0 -1 10 0 10 0 1 10 FQA8N90C Rev. A1 0 5 10 15 20 25 30 35 40 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQA8N90C 900V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 Operation in This Area is Limited by R DS(on) 2 10 µs 8 ID, Drain Current [A] ID, Drain Current [A] 10 100 µs 1 10 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 2 10 4 2 -2 10 6 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve Zθ JC(t), Thermal Response 10 0 D = 0 .5 10 ※ N o te s : 1 . Z θ J C (t) = 0 .5 2 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 -1 0 .1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQA8N90C Rev. A1 4 www.fairchildsemi.com FQA8N90C 900V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQA8N90C Rev. A1 5 www.fairchildsemi.com FQA8N90C 900V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQA8N90C Rev. A1 6 www.fairchildsemi.com FQA8N90C 900V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FQA8N90C Rev. A1 7 www.fairchildsemi.com FQA8N90C 900V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters FQA8N90C Rev. A1 8 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 9 FQA8N90C Rev. A1 www.fairchildsemi.com FQA8N90C 900V N-Channel MOSFET TRADEMARKS